COMMERCIAL EXTENDED DRAM 347

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
M65KA512AB8W	STMicroelectronics	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED		DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		16	UNCASED CHIP				85 Cel		32MX16	32M	-30 Cel		UPPER	1	R-XUUC-N		1.9 V				Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH							6 ns
M65KG256AF8W8T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED		DIE	8192	UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	NO LEAD	SYNCHRONOUS	90 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	UNCASED CHIP	WAFER	DRAMs		85 Cel	3-STATE	16MX16	16M	-30 Cel		UPPER	1	X-XUUC-N		1.9 V		133 MHz		Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				.0006 Amp	2,4,8,16		6 ns
M65KG256AF8W6T	STMicroelectronics	DDR1 DRAM	COMMERCIAL EXTENDED	149	BGA		UNSPECIFIED	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY				85 Cel		16MX16	16M	-30 Cel		BOTTOM	1	X-XBGA-B149		1.9 V				Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH							6 ns
UPD2118D-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		22 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	16384 bit			e0						120 ns
UPD2118D-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		25 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	16384 bit			e0						100 ns
UPD2118C-2	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		22 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	16384 bit			e0						120 ns
UPD2118C	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		22 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	16384 bit			e0						150 ns
UPD2118D	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		22 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	16384 bit			e0						150 ns
UPD2118C-3	Renesas Electronics	PAGE MODE DRAM	COMMERCIAL EXTENDED	16	DIP	128	RECTANGULAR	PLASTIC/EPOXY		NO		MOS	THROUGH-HOLE		25 mA	16384 words			SEPARATE			1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	80 Cel	3-STATE	16KX1	16K	-10 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T16						Not Qualified	16384 bit			e0						100 ns
K4J52324QC-BJ110	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.22 ns
K4S56163PF-BG750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1.2 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH						11 mm	6 ns
K4M28323PH-FG1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH		30	240	.0003 Amp	1,2,4,8	13 mm	7 ns
K4M51323PC-DG750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						13 mm	6 ns
K4M56163LG-BN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.001 Amp	1,2,4,8	11 mm	5.4 ns
M395T2953CZ4-CD5	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH			260
K4M563233G-FN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH				.001 Amp	1,2,4,8	13 mm	5.4 ns
K4J52324QC-AJ110	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B136		2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e0					14 mm	.22 ns
K4M51163PC-BG750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						11.5 mm	6 ns
K4M51323LC-DN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	133 MHz	11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.001 Amp	1,2,4,8	13 mm	5.4 ns
K4X51323PC-8GC60	Samsung	DDR1 DRAM	COMMERCIAL EXTENDED	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1		260			13 mm	6 ns
M395T5750CZ4-CE6	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH			260
M395T5166AZ4-CD510	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH
K4J52324QC-BJ120	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	2.1 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.9 V	AUTO/SELF REFRESH	e1					14 mm	.23 ns
K4M56323LG-HN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.001 Amp	1,2,4,8	13 mm	5.4 ns
K4M51323LC-DG75TJR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.5		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90		2.7 V	1 mm		11 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
K4S561633F-XN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						11 mm	5.4 ns
M395T2953CZ4-CD510	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
K4J52324QC-BC140	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.26 ns
K4S561633F-ZN750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		3		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH						11 mm	5.4 ns
K4T51043QC-ZCD5TM0	Samsung	DDR2 DRAM	COMMERCIAL EXTENDED	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						11 mm	.5 ns
K4X51323PC-8GC3T	Samsung	DDR1 DRAM	COMMERCIAL EXTENDED	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm	133 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.0003 Amp	2,4,8,16	13 mm	6 ns
K4M28323PH-HG750	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.0003 Amp	1,2,4,8	13 mm	6 ns
K4M56163PG-BG75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	75 mA	16777216 words	1,2,4,8,FP		COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	1.95 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO REFRESH	e1		260	.00001 Amp	1,2,4,8	11 mm	6 ns
M395T5166AZ4-CE61P	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH
K4J52324QC-BC160	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.29 ns
K4J52324QE-BJ1A0	Samsung	GDDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1520 mA	16777216 words	4,8	YES	COMMON	1.9	1.9	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	3	2 V	1.2 mm	1000 MHz	11 mm	Not Qualified	536870912 bit	1.8 V	AUTO/SELF REFRESH	e1		260	.11 Amp	4,8	14 mm	.2 ns
K4M28323PH-HE900	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH				.0003 Amp	1,2,4,8	13 mm	7 ns
K4T51043QC-ZCCCT	Samsung	DDR2 DRAM	COMMERCIAL EXTENDED	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	200 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			260	.008 Amp	4,8	11 mm	.6 ns
K4M641633K-BN75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	115 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	1	S-PBGA-B54	3	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	67108864 bit	2.7 V	AUTO/SELF REFRESH			260	.0005 Amp	1,2,4,8	8 mm	5.4 ns
M395T6553CZ4-CE6	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH			260
K4M56163DG-BG75T	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	2.7 V	1 mm		8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1		260			11 mm	5.4 ns
M395T5166AZ4-CE610	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	2	1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH
K4M28323PH-HE1L0	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	4194304 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90	3	1.95 V	1 mm	111 MHz	8 mm	Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH				.0003 Amp	1,2,4,8	13 mm	7 ns
K4J52324QC-BC200	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.35 ns
K4T1G164QA-ZCD5T	Samsung	DDR2 DRAM	COMMERCIAL EXTENDED	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	340 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	266 MHz	11 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	18 mm	.5 ns
K4M283233H-HN750JR	Samsung	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-25 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						13 mm	5.4 ns
M395T5166AZ4-CE6	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH			260
M395T6553CZ4-CE61P	Samsung	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.