COMMERCIAL EXTENDED DRAM 347

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4B1G0446C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4B1G0846C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4B1G0446C-ZCF70	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	400 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.4 ns
K4B1G1646C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112	1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4B1G0446C-ZCF80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4B1G0446C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.255 ns
K4B1G1646C-ZCG80	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112	1.575 V	1.2 mm	533 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.3 ns
K4B1G0846C-ZCH90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.255 ns
K4B1G1646C-ZCG90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	112	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA112,11X22,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B112	1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.255 ns
K4B1G0846C-ZCG90	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	667 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.255 ns
K4B1G0846C-ZCF70	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	94	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA94,11X19,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B94	1.575 V	1.2 mm	400 MHz	11 mm	Not Qualified	1073741824 bit	1.452 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	18 mm	.4 ns
MT4LC1M16E5DJ-6ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
MT4C1M16C3DJ-6SET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	180 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		27.33 mm	60 ns
MT4LC1M16E5DJ-5ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.0005 Amp			50 ns
MT18HVF12872PY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT4C1M16C3TG-5SET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	190 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		20.96 mm	50 ns
MT9HVF12872KY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT9HVF12872KY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT18HVF12872PY-667C2	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT4C1M16C3DJ-5ET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	190 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		27.33 mm	50 ns
MT9HVF6472KY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT9HVF12872KY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT4LC1M16E5TG-6ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
MT4C1M16E5TG-5ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		190 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.0005 Amp			50 ns
MT9HVF6472KY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT4LC1M16E5DJ-6SET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		170 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.00015 Amp			60 ns
MT9HVF6472KY-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4			.063 Amp			.45 ns
MT4LC1M16E5TG-6SET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.00015 Amp			60 ns
MT4C1M16C3TG-5ET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	190 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	50 ns
MT4C1M16C3DJ-6ET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		27.33 mm	60 ns
MT18HVF12872Y-667C2	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT18HVF12872Y-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT4C1M16C3TG-6SET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	180 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		20.96 mm	60 ns
MT18HVF12872Y-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT4C1M16E5DJ-5ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		190 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.0005 Amp			50 ns
MT9HVF6472KY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT4C1M16E5TG-6ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.0005 Amp			60 ns
MT4C1M16C3DJ-5SET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	190 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		27.33 mm	50 ns
MT4LC1M16E5TG-5ET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.0005 Amp			50 ns
MT4LC1M16E5TG-5SET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-G44					Not Qualified	16777216 bit			e0			.00015 Amp			50 ns
MT9HVF6472KY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT4C1M16C3TG-6ET	Micron Technology	FAST PAGE DRAM	COMMERCIAL EXTENDED	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	180 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32	DRAMs	.8 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	60 ns
MT18HVF12872PY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT9HVF12872PKY-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V		200 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4			.063 Amp			.45 ns
MT9HVF12872KY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT4LC1M16E5DJ-5SET	Micron Technology	EDO DRAM	COMMERCIAL EXTENDED	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	80 Cel	3-STATE	1MX16	1M	-20 Cel	TIN LEAD	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			e0			.00015 Amp			50 ns
MT9HVF6472PKY-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL EXTENDED	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1980 mA	67108864 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V		200 MHz		Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4			.063 Amp			.45 ns
MT48V4M32LFBC-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	2.7 V	1.2 mm	100 MHz	11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.00035 Amp	1,2,4,8	13 mm	7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.