COMMERCIAL EXTENDED DRAM 347

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT48G8M16LFB4-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3.3 V	1 mm	100 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e1	260	.00035 Amp	1,2,4,8	8 mm	7 ns
MT48LC16M16LFP-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	260	.0005 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48V16M16LFTG-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	104 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	22.22 mm	7 ns
MT48V4M32P-8XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3				22.22 mm	7 ns
MT48V16M16LFF8-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	11 mm	5.4 ns
MT48LC4M32LFP-10XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	7 ns
MT48V16M16LFFG-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	14 mm	7 ns
MT48V8M16LFF4-75MXT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00045 Amp	1,2,4,8	8 mm	5.4 ns
MT48V8M16P-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	260	.00045 Amp	1,2,4,8	22.22 mm	7 ns
MT48LC8M16LFP-8XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		8MX16	8M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	7 ns
MT48V4M32LFTG-8XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0				22.22 mm	7 ns
MT48V16M16LFF8-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54	2.7 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	11 mm	7 ns
MT48V8M16LFB4-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2.7 V	1 mm	100 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.00045 Amp	1,2,4,8	8 mm	7 ns
MT48V16M16LFBG-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.0005 Amp	1,2,4,8	14 mm	7 ns
MT48V4M32P-10XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3				22.22 mm	7 ns
MT48LC16M16LFF8-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54	3.6 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	11 mm	7 ns
MT48V8M16LFFF-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	2.7 V	1.1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00035 Amp	1,2,4,8	9 mm	7 ns
MT48G8M16LFBF-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3.3 V	1.1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e1	260	.00035 Amp	1,2,4,8	9 mm	7 ns
MT48G16M16LFTG-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.3 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48V4M32LFF5-75MXT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	2.7 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00045 Amp	1,2,4,8	13 mm	5.4 ns
MT48LC4M32TG-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0				22.22 mm	7 ns
MT48V4M32LFB5-10XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	2.7 V	1 mm	100 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1		.00045 Amp	1,2,4,8	13 mm	7 ns
MT48V4M32LFF5-8XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00045 Amp	1,2,4,8	13 mm	7 ns
MT48LC4M32LFB5-8XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1		.00045 Amp	1,2,4,8	13 mm	7 ns
MT48G16M16LFBG-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	165 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3.3 V	1 mm	125 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		260	.0005 Amp	1,2,4,8	14 mm	7 ns
MT48V8M16TG-75MXT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00045 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16LFBG-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel		BOTTOM	1	R-PBGA-B54	3.6 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH		260	.0005 Amp	1,2,4,8	14 mm	7 ns
MT48G16M16LFBG-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3.3 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1	260	.0005 Amp	1,2,4,8	14 mm	7 ns
MT48V8M16P-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e3	260	.00045 Amp	1,2,4,8	22.22 mm	7 ns
MT48G8M16LFF4-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54	3.3 V	1 mm	100 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e0		.00035 Amp	1,2,4,8	8 mm	7 ns
MT48LC16M16LFTG-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	104 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	22.22 mm	7 ns
MT48LC8M16LFFF-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B54	3.6 V	1.1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0		.00035 Amp	1,2,4,8	9 mm	7 ns
MT48LC16M16LFB8-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e1	260	.0005 Amp	1,2,4,8	11 mm	5.4 ns
MT48V8M16TG-75MXT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00045 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC4M32LFB5-10XT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	100 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1		.00045 Amp	1,2,4,8	13 mm	7 ns
MT48LC8M16LFB4-75MXT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1	260	.00045 Amp	1,2,4,8	8 mm	5.4 ns
MT48V8M16LFTG-75MXT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		8MX16	8M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0				22.22 mm	5.4 ns
MT48LC4M32LFTG-75MXT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0				22.22 mm	5.4 ns
MT48V8M16LFB4-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.00045 Amp	1,2,4,8	8 mm	7 ns
MT48G16M16LFFG-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	155 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B54	3.3 V	1 mm	104 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH	e1		.0005 Amp	1,2,4,8	14 mm	7 ns
MT48V16M16LFTG-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48V4M32LFB5-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	2.7 V	1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.00045 Amp	1,2,4,8	13 mm	7 ns
MT48LC16M16LFF8-75XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	175 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	16MX16	16M	-25 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0		.0005 Amp	1,2,4,8	11 mm	5.4 ns
MT48V4M32LFFC-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	2.5	1.8/2.5,2.5	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B90	2.7 V	1.2 mm	100 MHz	11 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.00035 Amp	1,2,4,8	13 mm	7 ns
MT48G8M16LFF4-8XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	VFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3	3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B54	3.3 V	1 mm	125 MHz	8 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH	e0		.00035 Amp	1,2,4,8	8 mm	7 ns
MT48LC4M32P-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.8 mm	75 Cel		4MX32	4M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3				22.22 mm	7 ns
MT48LC8M16P-10XT	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	75 Cel	3-STATE	8MX16	8M	-25 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	260	.00045 Amp	1,2,4,8	22.22 mm	7 ns
MT48LC4M32LFB5-75MXT:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL EXTENDED	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	235 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	75 Cel	3-STATE	4MX32	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90	3.6 V	1 mm	133 MHz	8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1		.00045 Amp	1,2,4,8	13 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.