INDUSTRIAL DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

K4E641612D-TI45T

Samsung

EDO DRAM

INDUSTRIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

130 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

TIN LEAD

DUAL

R-PDSO-G50

Not Qualified

67108864 bit

e0

.0005 Amp

45 ns

K4F660412E-JI50

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.96 mm

50 ns

K4F640412E-JP50

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

20.96 mm

50 ns

K4E640812D-JP45

Samsung

EDO DRAM

INDUSTRIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.96 mm

45 ns

K1S161611A-BI70

Samsung

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

30 mA

1048576 words

COMMON

3

3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,30

Other Memory ICs

.75 mm

85 Cel

3-STATE

1MX16

1M

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B48

1

Not Qualified

16777216 bit

e3

.00008 Amp

70 ns

K4T51163QE-ZICC

Samsung

CACHE DRAM MODULE

INDUSTRIAL

84

FBGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

215 mA

33554432 words

4,8

COMMON

1.8

1.8

16

GRID ARRAY, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX16

32M

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B84

1

200 MHz

Not Qualified

536870912 bit

e3

.008 Amp

4,8

.6 ns

K4E661612D-TI600

Samsung

EDO DRAM

INDUSTRIAL

50

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

DUAL

R-PDSO-G50

1

Not Qualified

67108864 bit

.0005 Amp

60 ns

K4H511638C-UIB3T

Samsung

CACHE DRAM MODULE

INDUSTRIAL

66

TSSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

380 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP66,.46

DRAMs

.635 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G66

1

166 MHz

Not Qualified

536870912 bit

e3

.005 Amp

2,4,8

.7 ns

K4F640412D-TI600

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0005 Amp

60 ns

K4F660412E-TP450

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0002 Amp

45 ns

K4S643232E-TI600

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

86

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

32

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX32

2M

-45 Cel

DUAL

1

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

30

240

22.22 mm

5.5 ns

K4S64163LF-BP15

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

54

VFBGA

4096

SQUARE

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

80 mA

4194304 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA54,9X9,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

BOTTOM

1

S-PBGA-B54

3

2.7 V

1 mm

66 MHz

8 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

260

.0005 Amp

1,2,4,8

8 mm

9 ns

K4F660412E-TP45

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

20.95 mm

45 ns

K4S643232E-TP700

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

86

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

2097152 words

YES

3.3

32

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

2MX32

2M

-45 Cel

DUAL

1

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

AUTO/SELF REFRESH

30

240

22.22 mm

5.5 ns

K4H510838D-UIB00

Samsung

DDR1 DRAM

INDUSTRIAL

66

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

325 mA

67108864 words

2,4,8

YES

COMMON

2.5

2.5

8

SMALL OUTLINE, THIN PROFILE

TSSOP66,.46

DRAMs

.65 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

DUAL

1

R-PDSO-G66

2.7 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

2,4,8

22.22 mm

.75 ns

K4E660412E-JI60

Samsung

EDO DRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.96 mm

60 ns

K4H511638F-LIB30

Samsung

DDR1 DRAM

INDUSTRIAL

66

TSSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

380 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP66,.46

DRAMs

.635 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

DUAL

R-PDSO-G66

166 MHz

Not Qualified

536870912 bit

.005 Amp

2,4,8

.7 ns

K4B4G0846D-BMK00

Samsung

DDR3L DRAM

INDUSTRIAL

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

536870912 words

YES

1.35

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

512MX8

512M

-40 Cel

BOTTOM

1

R-PBGA-B78

1.45 V

1.2 mm

7.5 mm

4294967296 bit

1.283 V

AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY

11 mm

K4F660412E-TI600

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

100 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0005 Amp

60 ns

K4H511638C-ZPB30

Samsung

DDR1 DRAM

INDUSTRIAL

60

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

380 mA

33554432 words

2,4,8

YES

COMMON

2.5

2.5

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA60,9X12,40/32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

166 MHz

10 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

2,4,8

12 mm

.7 ns

K4H511638D-ZIB3

Samsung

DDR1 DRAM

INDUSTRIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

380 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

BOTTOM

R-PBGA-B60

3

166 MHz

Not Qualified

536870912 bit

260

.005 Amp

2,4,8

.7 ns

K4F640812E-TI450

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

8388608 words

NO

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0005 Amp

45 ns

K4H561638J-HIB3T

Samsung

DDR1 DRAM

INDUSTRIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

270 mA

16777216 words

2,4,8

COMMON

2.5

2.5

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

167 MHz

Not Qualified

268435456 bit

e3

.004 Amp

2,4,8

.7 ns

K4T51163QE-ZICC0

Samsung

DDR2 DRAM

INDUSTRIAL

84

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

215 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX16

32M

-40 Cel

BOTTOM

1

R-PBGA-B84

1.9 V

1.2 mm

200 MHz

9 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.008 Amp

4,8

13 mm

.6 ns

K4F640412E-TI50T

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

16777216 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0005 Amp

50 ns

K4H511638D-UPB3T

Samsung

DDR1 DRAM

INDUSTRIAL

66

TSSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

380 mA

33554432 words

2,4,8

COMMON

2.5

2.5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP66,.46

DRAMs

.635 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

MATTE TIN

DUAL

R-PDSO-G66

1

166 MHz

Not Qualified

536870912 bit

e3

.005 Amp

2,4,8

.7 ns

K4E640812E-TI45

Samsung

EDO DRAM

INDUSTRIAL

32

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

1

R-PDSO-G32

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.95 mm

45 ns

K4T51083QN-BIE70

Samsung

DDR2 DRAM

INDUSTRIAL

60

VFBGA

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-40 Cel

BOTTOM

1

R-PBGA-B60

1.9 V

1 mm

7.5 mm

536870912 bit

1.7 V

AUTO/SELF REFRESH

9.5 mm

.4 ns

K4F640412E-JI60

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

16777216 words

3.3

4

SMALL OUTLINE

1.27 mm

85 Cel

16MX4

16M

-40 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.96 mm

60 ns

K4H511638J-BPB30

Samsung

DDR1 DRAM

INDUSTRIAL

60

TBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

200 mA

33554432 words

2,4,8

YES

COMMON

2.5

2.5

16

GRID ARRAY, THIN PROFILE

BGA60,9X12,40/32

DRAMs

1 mm

85 Cel

3-STATE

32MX16

32M

-40 Cel

BOTTOM

1

R-PBGA-B60

2.7 V

1.2 mm

166 MHz

9 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

260

.005 Amp

2,4,8

12 mm

.7 ns

K4H561638H-UICC

Samsung

DDR1 DRAM

INDUSTRIAL

66

TSSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

350 mA

16777216 words

2,4,8

COMMON

2.6

2.6

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP66,.46

DRAMs

.635 mm

85 Cel

3-STATE

16MX16

16M

-40 Cel

DUAL

R-PDSO-G66

200 MHz

Not Qualified

268435456 bit

.004 Amp

2,4,8

.65 ns

K4H510838D-UPB00

Samsung

DDR1 DRAM

INDUSTRIAL

66

TSOP2

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

GULL WING

SYNCHRONOUS

325 mA

67108864 words

2,4,8

YES

COMMON

2.5

2.5

8

SMALL OUTLINE, THIN PROFILE

TSSOP66,.46

DRAMs

.65 mm

85 Cel

3-STATE

64MX8

64M

-40 Cel

DUAL

1

R-PDSO-G66

2.7 V

1.2 mm

133 MHz

10.16 mm

Not Qualified

536870912 bit

2.3 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

2,4,8

22.22 mm

.75 ns

K4F640412E-JP450

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

.0002 Amp

45 ns

K4B2G0846Q-BIK00

Samsung

DDR3 DRAM

INDUSTRIAL

78

TFBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

268435456 words

YES

1.5

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

256MX8

256M

-40 Cel

BOTTOM

1

R-PBGA-B78

1.575 V

1.2 mm

7.5 mm

2147483648 bit

1.425 V

AUTO/SELF REFRESH

11 mm

K4S561632J-UP60T

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

54

TSOP

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

200 mA

16777216 words

1,2,4,8,FP

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP54,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-40 Cel

DUAL

R-PDSO-G54

166 MHz

Not Qualified

268435456 bit

.002 Amp

1,2,4,8

5 ns

K4B2G1646Q-BIH90

Samsung

DDR3 DRAM

INDUSTRIAL

96

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

193 mA

134217728 words

8

YES

COMMON

1.5

1.5

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA96,9X16,32

DRAMs

.8 mm

85 Cel

3-STATE

128MX16

128M

-40 Cel

BOTTOM

1

R-PBGA-B96

1.575 V

1.2 mm

667 MHz

7.5 mm

Not Qualified

2147483648 bit

1.425 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.011 Amp

8

13.3 mm

.255 ns

K4F640812E-TP500

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.46

DRAMs

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

DUAL

R-PDSO-G32

Not Qualified

67108864 bit

.0002 Amp

50 ns

K4T51163QE-ZIF70

Samsung

DDR2 DRAM

INDUSTRIAL

84

TFBGA

8192

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

280 mA

33554432 words

4,8

YES

COMMON

1.8

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA84,9X15,32

DRAMs

.8 mm

95 Cel

3-STATE

32MX16

32M

-40 Cel

BOTTOM

1

R-PBGA-B84

1.9 V

1.2 mm

400 MHz

9 mm

Not Qualified

536870912 bit

1.7 V

AUTO/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.008 Amp

4,8

13 mm

.4 ns

K4S64163LF-GP75

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

52

VFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

115 mA

4194304 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA52,6X13,30

DRAMs

.75 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

BOTTOM

1

R-PBGA-B52

2.7 V

1 mm

133 MHz

6.6 mm

Not Qualified

67108864 bit

2.3 V

AUTO/SELF REFRESH

.0005 Amp

1,2,4,8

11 mm

5.4 ns

K4H561638J-HICCT

Samsung

DDR1 DRAM

INDUSTRIAL

60

BGA

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

290 mA

16777216 words

2,4,8

COMMON

2.6

2.6

16

GRID ARRAY

BGA60,9X12,40/32

DRAMs

.8 mm

85 Cel

3-STATE

16MX16

16M

-40 Cel

MATTE TIN

BOTTOM

R-PBGA-B60

1

200 MHz

Not Qualified

268435456 bit

e3

.004 Amp

2,4,8

.65 ns

K4F641612D-TP50T

Samsung

FAST PAGE DRAM

INDUSTRIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

120 mA

4194304 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

DUAL

R-PDSO-G50

Not Qualified

67108864 bit

.0002 Amp

50 ns

K4F660412D-JP45

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

16777216 words

YES

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

85 Cel

3-STATE

16MX4

16M

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

e0

.0002 Amp

20.96 mm

45 ns

K4F641612D-TP45

Samsung

FAST PAGE DRAM

INDUSTRIAL

50

TSOP2

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

3.3

16

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

4MX16

4M

-40 Cel

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

20.95 mm

45 ns

K4F640812D-JI60

Samsung

FAST PAGE DRAM

INDUSTRIAL

32

SOJ

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

8388608 words

3.3

8

SMALL OUTLINE

1.27 mm

85 Cel

8MX8

8M

-40 Cel

DUAL

1

R-PDSO-J32

3.6 V

3.76 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.96 mm

60 ns

K4E641612D-TI600

Samsung

EDO DRAM

INDUSTRIAL

50

TSOP

4096

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

110 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

DUAL

R-PDSO-G50

1

Not Qualified

67108864 bit

.0005 Amp

60 ns

K4E660812E-JP450

Samsung

EDO DRAM

INDUSTRIAL

32

SOJ

8192

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

8388608 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ32,.44

DRAMs

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

DUAL

R-PDSO-J32

Not Qualified

67108864 bit

.001 Amp

45 ns

K4E641612D-TI60

Samsung

EDO DRAM

INDUSTRIAL

50

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

110 mA

4194304 words

NO

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP50,.46,32

DRAMs

.8 mm

85 Cel

3-STATE

4MX16

4M

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-G50

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0005 Amp

20.95 mm

60 ns

K4M56323LD-MP1H

Samsung

SYNCHRONOUS DRAM

INDUSTRIAL

90

LFBGA

4096

RECTANGULAR

PLASTIC/EPOXY

FOUR BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

290 mA

8388608 words

1,2,4,8,FP

YES

COMMON

2.5

1.8/2.5,2.5

32

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA90,9X15,32

DRAMs

.8 mm

85 Cel

8MX32

8M

-40 Cel

TIN LEAD

BOTTOM

1

R-PBGA-B90

2.7 V

1.45 mm

105 MHz

11 mm

Not Qualified

268435456 bit

2.3 V

AUTO/SELF REFRESH

e0

.0012 Amp

1,2,4,8

13 mm

7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.