INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS4256-20NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	200 ns
TMS4256-15NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	150 ns
TMS4256-10FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	100 ns
TMS4161-15FME	Texas Instruments	VIDEO DRAM	INDUSTRIAL	22	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	2	R-PQCC-J22	5.5 V	3.53 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT					12.445 mm	150 ns
TMS4256-15SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm		2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	150 ns
TMS4256-12FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	120 ns
SMJ4164-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			10.795 mm	120 ns
TMS4256-8FME	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.25 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	80 ns
TMS4256-10NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	100 ns
SMJ4164-20JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	DUAL	1	R-CDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED				200 ns
TMS4256-12NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	120 ns
TMS4256-10SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm		2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	100 ns
TMS4257-20NE	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	200 ns
SMJ4416-12FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words			COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			10.795 mm	120 ns
TMS4257-12NE	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	120 ns
TMS4257-12FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	120 ns
TMS4161-20NE	Texas Instruments	VIDEO DRAM	INDUSTRIAL	20	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	DUAL	2	R-PDIP-T20	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT					24.325 mm	200 ns
TMS4257-15NE	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	150 ns
SMJ4164-15JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	DUAL	1	R-CDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED				150 ns
TMS4257-20FME	Texas Instruments	NIBBLE MODE DRAM	INDUSTRIAL	18	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	NMOS		J BEND	ASYNCHRONOUS		262144 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	QUAD	1	R-PQCC-J18	5.5 V	3.53 mm		7.366 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					12.446 mm	200 ns
SMJ4416-12JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words			COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			22.606 mm	120 ns
TMS4161-20FME	Texas Instruments	VIDEO DRAM	INDUSTRIAL	22	QCCJ	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	YES	1	NMOS		J BEND	ASYNCHRONOUS		65536 words				5		1	CHIP CARRIER			1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	QUAD	2	R-PQCC-J22	5.5 V	3.53 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH; 256 X 1 SAM PORT					12.445 mm	200 ns
TMS4256-8SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.25 V	8.26 mm		2.8 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	80 ns
TMS4256-8NE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	DIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	DUAL	1	R-PDIP-T16	5.25 V	5.08 mm		7.62 mm	Not Qualified	262144 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.305 mm	80 ns
SMJ4416-15FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words			COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			10.795 mm	150 ns
TMS4256-12SDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	16	ZIP	256	RECTANGULAR	PLASTIC/EPOXY	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words				5		1	IN-LINE			2.54 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	ZIG-ZAG	1	R-PZIP-T16	5.5 V	8.26 mm		2.8 mm	Not Qualified	262144 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.5 mm	120 ns
SMJ4416-20JDE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		16384 words			COMMON	5	5	4	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	DUAL	1	R-CDIP-T18	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			22.606 mm	200 ns
SMJ4416-20FGE	Texas Instruments	PAGE MODE DRAM	INDUSTRIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS	38535Q/M;38534H;883B	NO LEAD	ASYNCHRONOUS		16384 words			COMMON	5	5	4	CHIP CARRIER	LCC18,.3X.43	DRAMs	1.27 mm	85 Cel	3-STATE	16KX4	16K	-40 Cel	QUAD	1	R-CQCC-N18	5.5 V	1.85 mm		7.366 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED			10.795 mm	200 ns
DM2M32SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1440 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	67108864 bit					.016 Amp			12 ns
DM512K32ST6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		720 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	16777216 bit					.004 Amp			15 ns
DM512K32ST-12I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		900 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	16777216 bit					.004 Amp			12 ns
DM2223T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			12 ns
DM2202J-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL		R-PDSO-J28					Not Qualified	4194304 bit					.001 Amp			15 ns
DM2233T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			15 ns
DM1M32SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1440 mA	1048576 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	33554432 bit					.008 Amp			15 ns
DM2203T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			12 ns
DM2M36SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2025 mA	2097152 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	75497472 bit					.018 Amp			12 ns
SM3404T-10I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	DUAL		R-PDSO-G50			100 MHz		Not Qualified	16777216 bit					.002 Amp	1,2,4,8		6 ns
DM2212T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			12 ns
DM2212T1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			15 ns
DM2212J-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL		R-PDSO-J28					Not Qualified	4194304 bit					.001 Amp			15 ns
DM512K36ST-12I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1125 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	18874368 bit					.005 Amp			12 ns
DM1M36SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1620 mA	1048576 words		NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	37748736 bit					.009 Amp			15 ns
DM2M36SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1620 mA	2097152 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	75497472 bit					.018 Amp			15 ns
DM2202T1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	DUAL		R-PDSO-G44					Not Qualified	4194304 bit					.001 Amp			12 ns
DM2M36SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1620 mA	2097152 words		NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	75497472 bit					.018 Amp			15 ns
SM3404T-6.0I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	DUAL		R-PDSO-G50			166 MHz		Not Qualified	16777216 bit					.002 Amp	1,2,4,8		4.5 ns
DM512K36ST-15I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		900 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel	SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	18874368 bit					.005 Amp			15 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.