INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
DM2202T-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM1M36SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	1048576 words		NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	37748736 bit						.009 Amp			12 ns
DM2M32SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	67108864 bit						.016 Amp			12 ns
DM1M36SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	1048576 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	37748736 bit						.009 Amp			12 ns
DM512K32ST6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		900 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	16777216 bit						.004 Amp			12 ns
DM2M32SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	67108864 bit						.016 Amp			15 ns
DM1M32SJ6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1800 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	33554432 bit						.008 Amp			12 ns
SM3404T-7.5I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	1048576 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel		DUAL		R-PDSO-G50			133 MHz		Not Qualified	16777216 bit						.002 Amp	1,2,4,8		4.6 ns
DM2M32SJ7-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	2097152 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	67108864 bit						.016 Amp			15 ns
DM2202J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			15 ns
DM2202T1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM512K36ST6-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1125 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	18874368 bit						.005 Amp			12 ns
DM2202J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2212T-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM1M32SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1800 mA	1048576 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	33554432 bit						.008 Amp			12 ns
DM2202T-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			12 ns
DM1M32SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1440 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX32	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	33554432 bit						.008 Amp			15 ns
DM2223T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM2212J1-15I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		180 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			15 ns
DM2213T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2202J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			12 ns
DM512K36ST6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		900 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX36	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	18874368 bit						.005 Amp			15 ns
DM2213T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM512K32ST-15I	Infineon Technologies	CACHE DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		720 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	512KX32	512K	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	16777216 bit						.004 Amp			15 ns
DM1M36SJ6-15I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	1048576 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	1MX36	1M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	37748736 bit						.009 Amp			15 ns
DM2233T-12I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2212J1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2203T-15I	Infineon Technologies	EDO DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	524288 words			COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			15 ns
DM2212J-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		225 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ28,.34	DRAMs	1.27 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-J28					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2212T1-12I	Infineon Technologies	CACHE DRAM	INDUSTRIAL	44	TSOP	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		225 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP44,.36,32	DRAMs	.8 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel		DUAL		R-PDSO-G44					Not Qualified	4194304 bit						.001 Amp			12 ns
DM2M36SJ7-12I	Infineon Technologies	EDO DRAM MODULE	INDUSTRIAL	72	SIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2025 mA	2097152 words		NO	COMMON	3.3	3.3	36	MICROELECTRONIC ASSEMBLY	SSIM72	DRAMs	1.27 mm	85 Cel	3-STATE	2MX36	2M	-40 Cel		SINGLE		R-PSMA-N72		24.257 mm			Not Qualified	75497472 bit						.018 Amp			12 ns
SM3604T-7.5I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	4194304 words			COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel		DUAL		R-PDSO-G54			133 MHz		Not Qualified	67108864 bit						.0025 Amp			4.8 ns
SM3603T-7.5I	Infineon Technologies	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		170 mA	8388608 words			COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX8	8M	-40 Cel		DUAL		R-PDSO-G54			133 MHz		Not Qualified	67108864 bit						.0025 Amp			4.8 ns
TC59S6432DFTLI-70	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	4.4 ns
TC59LM814CFTI-60	Toshiba	DDR1 DRAM	INDUSTRIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS		16777216 words				2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	85 Cel		16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.65 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO REFRESH	e0					22.22 mm	.85 ns
TC59SM816CFTI-75	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59SM816CFTI-80	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
TC59SM716AFTI-80	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	6 ns
TC59LM818DMGI-40	Toshiba	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	301989888 bit							2,4		.6 ns
TC59S6432DFTI-70	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	140 mA	2097152 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20	DRAMs	.5 mm	85 Cel	3-STATE	2MX32	2M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	4.4 ns
TC59LM818DMGI-37	Toshiba	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS	420 mA	16777216 words	2,4		COMMON	2.5	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm	266 MHz	9 mm	Not Qualified	301989888 bit	2.375 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4	16.5 mm	.65 ns
TC59SM716AFTI-75	Toshiba	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	160 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.001 Amp	1,2,4,8	22.22 mm	5.4 ns
TC59LM818DMBI-40	Toshiba	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4		COMMON		1.8,2.5	18	GRID ARRAY	BGA60,6X15,40	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60			200 MHz		Not Qualified	301989888 bit			e0				2,4		.6 ns
TC59LM818DMBI-37	Toshiba	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	BALL	SYNCHRONOUS		16777216 words				2.5		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M	-40 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	2.625 V	1.2 mm		9 mm	Not Qualified	301989888 bit	2.375 V	AUTO REFRESH	e0					16.5 mm	.65 ns
TC59LM806CFTI-60	Toshiba	DDR1 DRAM	INDUSTRIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS	GULL WING	SYNCHRONOUS	170 mA	33554432 words	2,4		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G66	2.65 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	2.35 V	AUTO REFRESH	e0			.002 Amp	2,4	22.22 mm	.85 ns
K4H510838J-BICC0	Samsung	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm	200 MHz	9 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.005 Amp	2,4,8	12 mm	.65 ns
K4S560432C-TP7C	Samsung	SYNCHRONOUS DRAM	INDUSTRIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54	3.6 V		133 MHz		Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8		5.4 ns
K4F660412D-JI60T	Samsung	FAST PAGE DRAM	INDUSTRIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		100 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ32,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX4	16M	-40 Cel		DUAL		R-PDSO-J32					Not Qualified	67108864 bit						.0005 Amp			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.