INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4C4256DJ-7IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		17.17 mm	70 ns
MT16JSS51264HIY-80CD1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3320 mA	536870912 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	34359738368 bit						.16 Amp
MT49H16M36CBM-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	15 ns
MT18JSF25672PDIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT36JSZF51272PIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT36JDZS1G72DIZ-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm			Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HTF25672PIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT16HTF25664HIZ-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT18VDDT6472AIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT49H32M18CHT-33IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	20 ns
MT4C10017DJ-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0						70 ns
MT18JBZF25672PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX8	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT18JSF1G72AIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT5VDDT872HIG-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	8MX72	8M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	603979776 bit									.75 ns
MT49H32M18BM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp		18.5 mm	20 ns
MT4C1024TG-8ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.14 mm	80 ns
MT42L96M64D3MQ-3AT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	240	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		96MX64	96M	-40 Cel		BOTTOM	1	S-PBGA-B240		1.9 V	.9 mm		14 mm		6442450944 bit	1.7 V	AUTO/SELF REFRESH						14 mm
MT8LSDT1664HIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		16MX64	16M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e4					67.585 mm	5.4 ns
MT18HTF25672PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30.175 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT49H32M18CFM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT16HTF51272AIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9HTF6472IY-40ED2	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1980 mA	67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			200 MHz		Not Qualified	4831838208 bit			e3			.063 Amp			.6 ns
MT49H8M36CBM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.5 ns
MT18JSZF25672PDIY-1G1D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	19327352832 bit			e3			.18 Amp
MT49H16M36BM-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	885 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.055 Amp		18.5 mm	15 ns
MT5VDDT3272HIG-262	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2000 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2415919104 bit						.025 Amp			.7 ns
MT49H16M18CBM-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT9JSF25672AIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4					133.35 mm
MT8JTF12864HIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		128MX64	128M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		8589934592 bit	1.425 V	SELF REFRESH; WD-MAX						67.6 mm
MT4VDDT864AIY-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		8MX64	8M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
MT49H16M36CFM-33IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT42L64M64D1TK-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX64	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm		10 mm		4294967296 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11.5 mm
MT18VDDT25672DIY-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT18VDDT3272DIY-202	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2502 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	2415919104 bit						.054 Amp			.8 ns
MT9VDDT1672PHIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		16MX72	16M	-40 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e0						.75 ns
MT9VDDT12872HIY-202	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200				125 MHz		Not Qualified	9663676416 bit									.8 ns
MT18VDDT6472AIY-26A	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4230 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	4831838208 bit									.75 ns
MT18VDDS6472HI-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT18VDDT12872LAIG-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT9LSDT1672AIY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2070 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel		DUAL		R-PDMA-N168				143 MHz		Not Qualified	1207959552 bit						.018 Amp			5.4 ns
MT4C4260-10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.0002 Amp			100 ns
MT49H8M36CHU-33	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.3 ns
MT18LSDT6472AIG-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4860 mA	67108864 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	4831838208 bit						.036 Amp			5.4 ns
MT8JTF25664HIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		256MX64	256M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		17179869184 bit	1.425 V	SELF REFRESH; WD-MAX						67.6 mm
MT49H16M18BM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.3 ns
MT36JDZS51272DIZ-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8JTF25664HIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT18HTF51272AIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH						133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.