INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT36HTJ51272IY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V	7.12 mm		30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT49H16M18FM-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH					18.5 mm
MT16HTF51264HIZ-1GAXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200	1.9 V	30.15 mm			Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT9VDDT12872HIY-40BXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200	2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4					.7 ns
MT18VDDT6472LAIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT4C1004JZ-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20	5.5 V	9.35 mm		2.795 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	25.295 mm	80 ns
MT18VDDT12872PHIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N200	2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT9HVF6472PIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240	1.9 V	4 mm		17.9 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT36JBZS51272PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX8	512M	-40 Cel		DUAL	1	R-XDMA-N240	1.575 V	18 mm		4 mm	Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX					133.35 mm
MT8JSF12864HIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT8JTF12864HIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204	1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT4C1026VG-10IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP20(UNSPEC)	SRAMs		85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20					Not Qualified	1048576 bit			e0			.001 Amp		100 ns
MT4HTF1664HIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		16MX64	16M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	1.9 V	30 mm			Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT18VDDT6472LAIG-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4590 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184			167 MHz		Not Qualified	4831838208 bit								.7 ns
MT16LSDT1664AI-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		16MX64	16M	-40 Cel		DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235			6 ns
MT49H8M36CHT-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260		18.5 mm	.5 ns
MT4C1024RG-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3				17.14 mm	80 ns
MT16JTF25664AIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240	1.575 V	30.5 mm			Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT42L128M16D2TK-25IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	.7 mm		10 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					11.5 mm
MT18KBZS1G72PKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N244	1.45 V	17.91 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY					82 mm
MT8LSDT6464HIY-133C1	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144	3.6 V	3.8 mm		31.75 mm	Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4				67.585 mm	5.4 ns
MT42L64M32D2LL-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	105 Cel		64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B216	1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
MT4C4256TG-7IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36	DRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp	17.14 mm	70 ns
MT36JSZF1G72PIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240	1.575 V	4 mm		30 mm	Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH					133.35 mm
MT16JTF1G64AIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX64	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240	1.575 V	30.5 mm				68719476736 bit	1.425 V	AUTO/SELF REFRESH	e4				133.35 mm
MT42L32M16D1FE-25IT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	121	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121	1.3 V	.8 mm		6.5 mm		536870912 bit	1.14 V	SELF REFRESH	e1				8 mm
MT9VDDT12872HIY-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200			166 MHz		Not Qualified	9663676416 bit								.7 ns
MT49H16M36HT-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1100 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp	18.5 mm	.2 ns
MT49H32M18HU-18IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0				18.5 mm
MT18VDDT6472LAIG-202	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4410 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184			125 MHz		Not Qualified	4831838208 bit								.8 ns
MT18HVS25672PKIY-667XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		8	MICROELECTRONIC ASSEMBLY				85 Cel		256MX8	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4				82 mm
MT4C4256DJ-8LIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34	DRAMs	1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-J20	5.5 V	3.61 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0			.0002 Amp	17.17 mm	80 ns
MT18HTF25672PKIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	30.152 mm		3.8 mm	Not Qualified	19327352832 bit	1.7 V	SELF REFRESH; WD-MAX	e4				82 mm
MT4C1026-10IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18					Not Qualified	1048576 bit			e0			.001 Amp		100 ns
MT5VDDT872HIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		8MX72	8M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	2.7 V				Not Qualified	603979776 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT9JSF25672PIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words				1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240	1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO REFRESH	e4				133.35 mm
MT49H64M9BM-25EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	980 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.053 Amp	18.5 mm	15 ns
MT16HTS25664HIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200	1.9 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4				67.6 mm
MT5VDDT1672HIY-262F3	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1900 mA	16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel		DUAL		R-PDMA-N200			133 MHz		Not Qualified	1207959552 bit						.02 Amp		.75 ns
MT49H8M36HT-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1				18.5 mm	.25 ns
MT72JSZS1G72PIY-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		2GX4	2G	-40 Cel		DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		4 mm	Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX					133.35 mm
MT4C4003JCN-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	DIP	1024	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		100 mA	1048576 words			COMMON	5	5	4	IN-LINE	DIP20,.3	SRAMs	2.54 mm	85 Cel	3-STATE	1MX4	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20					Not Qualified	4194304 bit			e0			.001 Amp		70 ns
MT49H32M18FM-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e0				18.5 mm	20 ns
MT9VDVF6472IG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT4VDDT864AIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		8MX64	8M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184	2.7 V				Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e4					.75 ns
MT49H32M18CBM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260		18.5 mm	20 ns
MT9VDDT12872HIG-26AXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N200	2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT49H16M36CFM-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0				18.5 mm	15 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.