INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT36HVS51272PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT16LSDT6464AGI-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	67108864 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	64MX64	64M	-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	4294967296 bit						.032 Amp			5.4 ns
MT9VDDT1672HIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		16MX72	16M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT18VDDT6472DIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4C1024Z-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words		SEPARATE	5	5	1	IN-LINE	ZIP20,.1	DRAMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	9.35 mm		2.795 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		25.295 mm	80 ns
MT49H16M18CFM-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	16777216 words		SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT18JSF51272AKIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	30.15 mm		3.8 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						82 mm
MT18HVS25672RHIY-40EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4
MT42L128M16D2LF-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		128MX16	128M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.75 mm		12 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
MT16HTF25664HIZ-53EE1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3360 mA	268435456 words		COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			267 MHz		Not Qualified	17179869184 bit			e3			.112 Amp
MT72HTS1G72PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30 mm	Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4HTF6464AI-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES				64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4
MT18VDDT25672DIG-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT49H16M18SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT18VDDT3272DIY-265	Micron Technology		INDUSTRIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2952 mA	33554432 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	Other Memory ICs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	2415919104 bit						.027 Amp			.75 ns
MT9JSF12872AIY-1G5XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	e4
MT16HTS25664HIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT18VDDS6472HI-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT9VDDT6472IY-202	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	4831838208 bit						.045 Amp			.8 ns
MT16JTF25664AIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	17179869184 bit	3 V	SELF CONTAINED REFRESH	e4
MT16HTF12864AIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT9VDDT3272HIG-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT8JTF12864AIY-80BB1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3520 mA	134217728 words		COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	-40 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	8589934592 bit						.08 Amp			.4 ns
MT18VDDT12872DIG-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT9KBF51272AKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244		1.45 V	17.91 mm				38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4					82 mm
MT9LSDT3272AIY-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2430 mA	33554432 words		COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2415919104 bit						.018 Amp			5.4 ns
MT18HTF25672AIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH						133.35 mm
MT4C4256C10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T20						Not Qualified	1048576 bit			e0			.001 Amp			100 ns
MT18JSF25672AIZ-1G1XX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT36HVZS51272PIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	3.99 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4C4256TG-7LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.14 mm	70 ns
MT4C4260-7IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		75 mA	262144 words		COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.0002 Amp			70 ns
MT4C10017DJ-8IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0						80 ns
MT49H16M36CHT-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT18JBF25672PIY-1G5XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX4	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT4C4256TG-6ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.14 mm	60 ns
MT18HTS51272RHIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT9JSF12872PIY-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	e4
MT18VDDT12872AIG-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT18JSF25672AIZ-80BXX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT4C10016DJ-5IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words	NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0						50 ns
MT18VDDT12872PHIG-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5040 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit									.75 ns
MT5VDDT3272HIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT9HTF6472RHIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT4VDDT3264HIY-335F2	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words		COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit									.7 ns
MT18VDDT6472PHIG-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4230 mA	67108864 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit									.75 ns
MT9JBF12872PIY-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		8	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX8	128M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	1073741824 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT72HTS1G72PIY-667XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30 mm	Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.