INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MT5VDDT872HIG-262	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	8MX72	8M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	603979776 bit								.7 ns
MT4C1024TG-8LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.14 mm	80 ns
MT36JBZS1G72PIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		9.1 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					133.35 mm
MT18JSF25672PDIY-80BXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9HVF3272PIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT49H64M9CHU-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX9	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0				18.5 mm	15 ns
MT4C4256TG-8LITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0				17.14 mm	80 ns
MT9JSF25672AIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH
MT16JTF51264AIY-80BB1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3920 mA	536870912 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	512MX64	512M	-40 Cel		DUAL		R-PDMA-N240				400 MHz		Not Qualified	34359738368 bit						.16 Amp
MT4HTF12864HIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		2.45 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e4				67.6 mm
MT49H8M36FM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1				18.5 mm	.3 ns
MT4C10016DJ-6VIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ24/28,.44	DRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0					60 ns
MT4C10016TG-7VIT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)	DRAMs		85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL								Not Qualified	16777216 bit			e0					70 ns
MT9LSDT3272LAIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	e4					5.4 ns
MT36JSF2G72PIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	SELF REFRESH; WD-MAX					133.35 mm
MT8JTF12864AIY-1G4B1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	134217728 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX64	128M	-40 Cel		DUAL		R-PDMA-N240				667 MHz		Not Qualified	8589934592 bit						.08 Amp		.255 ns
MT9JSF25672PIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT9HVF6472PKIY-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4				82 mm
MT4HTF12864AIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT18VDDT6472LAIY-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4					.8 ns
MT8JTF51264AIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		34359738368 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4				133.35 mm
MT9JBF25672AKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	17.91 mm		3.8 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX					82 mm
MT36HTF25672PIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT16JTF51264AIZ-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		512MX64	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	34359738368 bit	1.425 V	SELF CONTAINED REFRESH
MT18VDDT12872DIG-202	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5040 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	9663676416 bit								.8 ns
MT9KBZF51272PKIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	17.91 mm		3.8 mm		38654705664 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					82 mm
MT9HTF12872PIY-800D2	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3015 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3			.063 Amp		.4 ns
MT72JSZS1G72PIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH
MT4HTF3264HIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		2.45 mm	Not Qualified	2147483648 bit	1.7 V	SELF REFRESH; WD-MAX	e4				67.6 mm
MT18HTF51272AIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH					133.35 mm
MT49H8M36BM-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	700 mA	8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH					18.5 mm
MT16HTF25664AIY-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30.175 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT8JSF25664HIY-1G0B1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3440 mA	268435456 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	17179869184 bit						.08 Amp
MT18VDDT6472LAIY-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4590 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	4831838208 bit								.7 ns
MT16JSF25664HIY-1G1D1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3200 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V		533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4			.16 Amp
MT9JSF25672PIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT8JSF12864HIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		30 mm	Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH					67.6 mm
MT18VDDT6472LAIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT42L128M16D2LL-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					12 mm
MT9VDDT3272HIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235			.75 ns
MT4C1024-10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3	DRAMs	2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1048576 bit			e0			.001 Amp		100 ns
MT18HTS51272CHIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				67.75 mm
MT36HTF51272PIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT4HTF3264AIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm	.45 ns
MT36JSF2G72PIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	SELF REFRESH; WD-MAX					133.35 mm
MT9HVF6472PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	18 mm			Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4				133.35 mm
MT49H8M36CFM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0				18.5 mm	.5 ns
MT9HVF12872RHIY-80EE1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.