INDUSTRIAL DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT42L64M32D1LL-3IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216		8192		PLASTIC/EPOXY		YES		CMOS				178 mA		4,8,16		COMMON		1.2,1.8			BGA216,29X29,16	DRAMs		85 Cel	3-STATE				-40 Cel								333 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT18JBZS1G72PKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	17.91 mm		3.8 mm		77309411328 bit	1.425 V	SELF REFRESH; WD-MAX						82 mm
MT49H8M36BM-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT36HTF1G72PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		1GX72	1G		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4LC4M16R6TG-6IT	Micron Technology	EDO DRAM	INDUSTRIAL	50	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		165 mA	4194304 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G50						Not Qualified	67108864 bit			e0			.0005 Amp			60 ns
MT18JSF25672PIY-1G0D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		4500 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	19327352832 bit			e3			.45 Amp
MT9VDDT6472HIG-26A	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3150 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	64MX72	64M		-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit						.045 Amp			.75 ns
MT9JBF51272PKIZ-1G1XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M		-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	17.91 mm		3.8 mm		38654705664 bit	1.425 V	SELF REFRESH; WD-MAX						82 mm
MT18JSZF25672PIY-1G4D1	Micron Technology		INDUSTRIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		5670 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M		-40 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			667 MHz		Not Qualified	19327352832 bit			e3			.45 Amp
MT8JTF25664AIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4					133.35 mm
MT4C10017DJ-5IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND			16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0						50 ns
MT4LSDT1664AI-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		16MX64	16M		-40 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT18LSDT3272LAIG-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		5580 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	32MX72	32M		-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2415919104 bit						.036 Amp			5.4 ns
MT4C4258VG-7IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		80 mA	262144 words			COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP20(UNSPEC)	SRAMs		85 Cel	3-STATE	256KX4	256K		-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	1048576 bit			e0			.001 Amp			70 ns
MT18JSF25672PDIZ-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M		-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT49H16M18FM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT49H16M36BM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1					18.5 mm
MT8JTF25664AIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT18KBZS1G72PKIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G		-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	17.91 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						82 mm
MT42L128M64D4MC-3AT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	240	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	105 Cel		128MX64	128M		-40 Cel		BOTTOM	1	S-PBGA-B240		1.9 V	.8 mm		14 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH						14 mm
MT4JTF6464HIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M		-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT9HTF12872PIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX72	128M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30.175 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT18JSF51272AIZ-80CXX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M		-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT18JSF51272AIZ-1G4XX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M		-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT18JBF25672PIY-80BXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX4	512M		-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT18HTF51272PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M		-40 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				38654705664 bit	1.7 V	AUTO/SELF REFRESH						133.35 mm
MT4HTF6464HIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M		-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e4					67.6 mm
MT18VDDT12872DIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M		-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT49H16M36BM-18IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1545 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.055 Amp		18.5 mm	15 ns
MT42L64M64D1LF-3IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX64	64M		-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.75 mm		12 mm		4294967296 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
MT9VDDF6472IY-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3150 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M		-40 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	4831838208 bit						.045 Amp			.75 ns
MT49H8M36FM-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	8MX36	8M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.5 ns
MT42L128M16D1TK-18IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134		8192		PLASTIC/EPOXY		YES		CMOS				220 mA	134217728 words	4,8,16		COMMON		1.2,1.8	16		BGA134,10X17,25	DRAMs		85 Cel	3-STATE	128MX16	128M		-40 Cel								533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT4C1024RG-8ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE			1.27 mm	85 Cel	3-STATE	1MX1	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3					17.14 mm	80 ns
MT8LSDT3264AGI-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2160 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	32MX64	32M		-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.016 Amp			5.4 ns
MT42L128M16D1LF-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	AEC-Q100	BALL		220 mA	134217728 words	4,8,16		COMMON		1.2,1.8	16	GRID ARRAY, FINE PITCH	BGA168,23X23,20	DRAMs	.5 mm	105 Cel	3-STATE	128MX16	128M		-40 Cel		BOTTOM		S-PBGA-B168				533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT42L128M32D1TJ-25AAT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	128MX32	128M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm	400 MHz	10 mm		4294967296 bit	1.14 V	SELF REFRESH				.00001 Amp	4,8,16	11.5 mm
MT16HTF12864HIZ-40EE1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2640 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M		-40 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	8589934592 bit						.112 Amp			.6 ns
MT4VDDT3264AIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		32MX64	32M		-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT5LSDT872AIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				85 Cel		8MX72	8M		-40 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT49H16M36CHU-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT42L128M32D1TJ-25AIT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	85 Cel	3-STATE	128MX32	128M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm	400 MHz	10 mm		4294967296 bit	1.14 V	SELF REFRESH				.00001 Amp	4,8,16	11.5 mm
MT9HVF12872RHIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M		-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT18JSF51272AIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		512MX72	512M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4HTF12864AIZ-800XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY			1 mm	85 Cel		128MX64	128M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT49H16M18HT-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	200 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1					18.5 mm	.5 ns
MT49H64M9BM-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		9	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		64MX9	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1					18.5 mm
MT9KSF51272AKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M		-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						82 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.