INDUSTRIAL DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

MT4C4256C8IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

DIP

512

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

70 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

85 Cel

3-STATE

256KX4

256K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T20

Not Qualified

1048576 bit

e0

.001 Amp

80 ns

MT4C4001JDJ-8IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

90 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX4

1M

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.61 mm

7.67 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.001 Amp

17.17 mm

80 ns

MT18VDDT3272LAIY-265

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

2952 mA

33554432 words

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

85 Cel

3-STATE

32MX72

32M

-40 Cel

DUAL

R-PDMA-N184

133 MHz

Not Qualified

2415919104 bit

.027 Amp

.75 ns

MT4C4256DJ10IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

262144 words

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

85 Cel

3-STATE

256KX4

256K

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

MT4C4256-8LIT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

DIP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

65 mA

262144 words

COMMON

5

5

4

IN-LINE

DIP20,.3

DRAMs

2.54 mm

85 Cel

3-STATE

256KX4

256K

-40 Cel

TIN LEAD

DUAL

1

R-PDIP-T20

5.5 V

4.32 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH

e0

.0002 Amp

24.635 mm

80 ns

MT4C1004JRG-7IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

TSOP2-R

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

3-STATE

4MX1

4M

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e3

17.14 mm

70 ns

MT49H64M9FM-33EIT

Micron Technology

DDR DRAM

INDUSTRIAL

144

VBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

597 mA

67108864 words

2,4,8

YES

COMMON

1.8

1.5/1.8,1.8,2.5

9

GRID ARRAY, VERY THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

85 Cel

3-STATE

64MX9

64M

-40 Cel

TIN LEAD SILVER

BOTTOM

1

R-PBGA-B144

1.9 V

.93 mm

300 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO/SELF REFRESH

e0

.048 Amp

18.5 mm

.25 ns

MT4C1024DJ10IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

60 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

85 Cel

3-STATE

1MX1

1M

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-J20

Not Qualified

1048576 bit

e0

.001 Amp

100 ns

MT18KBZS1G72PKIZ-1G1XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

244

DIMM

RECTANGULAR

UNSPECIFIED

MULTI BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

85 Cel

1GX72

1G

-40 Cel

DUAL

1

R-XDMA-N244

1.45 V

17.91 mm

3.8 mm

77309411328 bit

1.283 V

AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

82 mm

MT42L64M64D2MQ-3AT:A

Micron Technology

LPDDR2 DRAM

INDUSTRIAL

240

VFBGA

SQUARE

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.8

64

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

105 Cel

64MX64

64M

-40 Cel

BOTTOM

1

S-PBGA-B240

1.9 V

.9 mm

14 mm

4294967296 bit

1.7 V

AUTO/SELF REFRESH

14 mm

MT42L64M32D1LF-3IT:C

Micron Technology

LPDDR2 DRAM

INDUSTRIAL

168

FBGA

8192

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

178 mA

4,8,16

COMMON

1.2,1.8

GRID ARRAY, FINE PITCH

BGA168,23X23,20

DRAMs

.5 mm

85 Cel

3-STATE

-40 Cel

BOTTOM

S-PBGA-B168

333 MHz

Not Qualified

2147483648 bit

.000025 Amp

4,8,16

5.5 ns

MT16HTF25664HIZ-1GAXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

85 Cel

256MX64

256M

-40 Cel

GOLD

DUAL

1

R-XDMA-N200

1.9 V

30.15 mm

Not Qualified

17179869184 bit

1.7 V

AUTO/SELF REFRESH

e4

67.6 mm

MT18HVS51272PKIZ-667XX

Micron Technology

DDR2 DRAM MODULE

INDUSTRIAL

244

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

512MX72

512M

-40 Cel

GOLD

DUAL

1

R-XDMA-N244

1.9 V

3.8 mm

18.2 mm

Not Qualified

38654705664 bit

1.7 V

AUTO REFRESH

e4

82 mm

MT8LSDT1664HIG-133XX

Micron Technology

SYNCHRONOUS DRAM MODULE

INDUSTRIAL

144

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

3.3

64

MICROELECTRONIC ASSEMBLY

85 Cel

16MX64

16M

-40 Cel

ZIG-ZAG

1

R-XZMA-N144

3.6 V

3.8 mm

31.75 mm

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

30

235

67.585 mm

5.4 ns

MT9VDDT6472HIY-26AXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

64MX72

64M

-40 Cel

GOLD

DUAL

1

R-XDMA-N200

2.7 V

Not Qualified

4831838208 bit

2.3 V

AUTO/SELF REFRESH

e4

.75 ns

MT42L64M64D1LL-3AAT:C

Micron Technology

LPDDR2 DRAM

INDUSTRIAL

216

VFBGA

SQUARE

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

YES

1.2

64

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

105 Cel

64MX64

64M

-40 Cel

BOTTOM

1

S-PBGA-B216

1.3 V

.8 mm

12 mm

4294967296 bit

1.14 V

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

12 mm

MT18VDDT6472AIG-26A

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

4230 mA

67108864 words

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

85 Cel

3-STATE

64MX72

64M

-40 Cel

DUAL

R-PDMA-N184

133 MHz

Not Qualified

4831838208 bit

.75 ns

MT9HVF6472RHIY-40EXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

64MX72

64M

-40 Cel

GOLD

DUAL

1

R-XDMA-N200

1.9 V

Not Qualified

4831838208 bit

1.7 V

AUTO/SELF REFRESH

e4

MT5VDDT1672HIY-26AF3

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1900 mA

16777216 words

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM200,24

DRAMs

.6 mm

85 Cel

3-STATE

16MX72

16M

-40 Cel

DUAL

R-PDMA-N200

133 MHz

Not Qualified

1207959552 bit

.02 Amp

.75 ns

MT9VDDT1672HIY-262XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

16777216 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

16MX72

16M

-40 Cel

GOLD

DUAL

1

R-XDMA-N200

2.7 V

Not Qualified

1207959552 bit

2.3 V

AUTO/SELF REFRESH

e4

.75 ns

EDB2432B4MA-1DAAT-F-RTR

Micron Technology

LPDDR2 DRAM

INDUSTRIAL

134

VFBGA

RECTANGULAR

PLASTIC/EPOXY

SINGLE BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

YES

1.8

32

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.65 mm

105 Cel

32MX32

32M

-40 Cel

BOTTOM

1

R-PBGA-B134

1.95 V

1 mm

10 mm

1073741824 bit

1.7 V

SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

11.5 mm

MT49H16M36BM-25IT:B

Micron Technology

DDR DRAM

INDUSTRIAL

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

700 mA

16777216 words

2,4,8

COMMON

1.8

1.5/1.8,1.8,2.5

36

GRID ARRAY, THIN PROFILE

BGA144,12X18,40/32

DRAMs

1 mm

85 Cel

3-STATE

16MX36

16M

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

400 MHz

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

e1

.055 Amp

18.5 mm

20 ns

MT18VDDT25672LAIY-262

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

5220 mA

268435456 words

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

85 Cel

3-STATE

256MX72

256M

-40 Cel

DUAL

R-PDMA-N184

133 MHz

Not Qualified

19327352832 bit

.09 Amp

.75 ns

MT16JTF25664AIY-1G1XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.5

64

MICROELECTRONIC ASSEMBLY

1 mm

85 Cel

256MX64

256M

-40 Cel

GOLD

DUAL

1

R-XDMA-N240

1.575 V

30.5 mm

Not Qualified

17179869184 bit

1.425 V

AUTO/SELF REFRESH

e4

133.35 mm

MT18HTS25672CHIY-667XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

256MX72

256M

-40 Cel

GOLD

ZIG-ZAG

1

R-XZMA-N200

1.9 V

3.8 mm

30 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

67.75 mm

MT18VDDT12872DIG-262

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

5220 mA

134217728 words

COMMON

2.5

2.5

72

MICROELECTRONIC ASSEMBLY

DIMM184

DRAMs

1.27 mm

85 Cel

3-STATE

128MX72

128M

-40 Cel

DUAL

R-PDMA-N184

133 MHz

Not Qualified

9663676416 bit

.75 ns

MT36HVZS1G72PIZ-800XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

512MX72

512M

-40 Cel

DUAL

1

R-XDMA-N240

1.9 V

18.05 mm

4 mm

38654705664 bit

1.7 V

SELF REFRESH; WD-MAX

133.35 mm

MT4C10016Z-7IT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

24

ZIP

4096

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

16777216 words

NO

SEPARATE

5

5

1

IN-LINE

ZIP24,.1

DRAMs

1.27 mm

85 Cel

3-STATE

16MX1

16M

-40 Cel

Tin/Lead (Sn/Pb)

ZIG-ZAG

R-PZIP-T24

Not Qualified

16777216 bit

e0

70 ns

MT49H32M18CHT-25EIT:A

Micron Technology

DDR DRAM

INDUSTRIAL

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

18

GRID ARRAY, THIN PROFILE

1 mm

85 Cel

32MX18

32M

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

11 mm

Not Qualified

603979776 bit

1.7 V

AUTO REFRESH

e1

30

260

18.5 mm

15 ns

MT4HTF3264AIY-800XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

33554432 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

95 Cel

32MX64

32M

-40 Cel

GOLD

DUAL

1

R-XDMA-N240

1.9 V

Not Qualified

2147483648 bit

1.7 V

AUTO/SELF REFRESH

e4

.4 ns

MT42L64M64D2LL-25IT:C

Micron Technology

LPDDR2 DRAM

INDUSTRIAL

216

8192

PLASTIC/EPOXY

YES

CMOS

194 mA

4,8,16

COMMON

1.2,1.8

BGA216,29X29,16

DRAMs

85 Cel

3-STATE

-40 Cel

400 MHz

Not Qualified

4294967296 bit

.000025 Amp

4,8,16

5.5 ns

MT16JSS51264HIY-1G5XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

204

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

536870912 words

YES

1.5

64

MICROELECTRONIC ASSEMBLY

85 Cel

512MX64

512M

-40 Cel

GOLD

DUAL

1

R-XDMA-N204

1.575 V

3.8 mm

30 mm

Not Qualified

34359738368 bit

1.425 V

AUTO/SELF REFRESH

e4

67.6 mm

MT18JBF25672PDIY-1G1D1

Micron Technology

INDUSTRIAL

240

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

3960 mA

268435456 words

COMMON

1.5

1.5

72

MICROELECTRONIC ASSEMBLY

DIMM240,40

Other Memory ICs

1 mm

85 Cel

3-STATE

256MX72

256M

-40 Cel

MATTE TIN

DUAL

R-PDMA-N240

1

533 MHz

Not Qualified

19327352832 bit

e3

.18 Amp

MT36JCZS1G72PIY-80CXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

1GX72

1G

-40 Cel

GOLD

DUAL

1

R-XDMA-N240

1.575 V

Not Qualified

77309411328 bit

1.425 V

AUTO/SELF REFRESH

e4

MT18HTS25672RHIY-40EXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

200

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

256MX72

256M

-40 Cel

GOLD

ZIG-ZAG

1

R-XZMA-N200

1.9 V

3.8 mm

30 mm

Not Qualified

19327352832 bit

1.7 V

AUTO/SELF REFRESH

e4

67.6 mm

MT18VDDT12872AIY-335XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

128MX72

128M

-40 Cel

GOLD

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

e4

.7 ns

MT4C1004JRG-6ITTR

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

TSOP2-R

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

3-STATE

4MX1

4M

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e3

17.14 mm

60 ns

MT49H64M9BM-33IT:B

Micron Technology

DDR DRAM

INDUSTRIAL

144

TBGA

RECTANGULAR

PLASTIC/EPOXY

MULTI BANK PAGE BURST

YES

1

CMOS

BALL

SYNCHRONOUS

67108864 words

1.8

9

GRID ARRAY, THIN PROFILE

1 mm

85 Cel

64MX9

64M

-40 Cel

TIN SILVER COPPER

BOTTOM

1

R-PBGA-B144

1.9 V

1.2 mm

11 mm

603979776 bit

1.7 V

AUTO REFRESH

e1

18.5 mm

20 ns

MT5LSDT1672AIG-133

Micron Technology

SYNCHRONOUS DRAM MODULE

INDUSTRIAL

168

DIMM

8192

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

NO LEAD

1350 mA

16777216 words

COMMON

3.3

3.3

72

MICROELECTRONIC ASSEMBLY

DIMM168

DRAMs

1.27 mm

85 Cel

3-STATE

16MX72

16M

-40 Cel

DUAL

R-PDMA-N168

1

133 MHz

Not Qualified

1207959552 bit

.01 Amp

5.4 ns

MT18KSF1G72AKIZ-1G4XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

244

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1073741824 words

YES

1.35

72

MICROELECTRONIC ASSEMBLY

85 Cel

1GX72

1G

-40 Cel

DUAL

1

R-XDMA-N244

1.45 V

30.15 mm

3.8 mm

77309411328 bit

1.283 V

SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX

82 mm

MT4C1024RG-7LIT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

TSOP2-R

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

1048576 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

85 Cel

3-STATE

1MX1

1M

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e3

17.14 mm

70 ns

MT4C4256DJ-8ITTR

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

SOJ

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

262144 words

5

4

SMALL OUTLINE

1.27 mm

85 Cel

3-STATE

256KX4

256K

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-J20

5.5 V

3.61 mm

7.67 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

e0

17.17 mm

80 ns

MT18VDDT12872AIY-26AXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

184

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

2.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

128MX72

128M

-40 Cel

GOLD

DUAL

1

R-XDMA-N184

2.7 V

Not Qualified

9663676416 bit

2.3 V

AUTO/SELF REFRESH

e4

.75 ns

MT18JDF25672PDIZ-1G3XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.5

72

MICROELECTRONIC ASSEMBLY

85 Cel

256MX72

256M

-40 Cel

DUAL

1

R-XDMA-N240

1.575 V

Not Qualified

19327352832 bit

1.425 V

AUTO/SELF REFRESH

MT18JBZF25672PDIY-1G1XX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

DUAL BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

268435456 words

YES

1.5

8

MICROELECTRONIC ASSEMBLY

1 mm

85 Cel

256MX8

256M

-40 Cel

DUAL

1

R-XDMA-N240

1.575 V

18 mm

4 mm

Not Qualified

2147483648 bit

1.425 V

SELF CONTAINED REFRESH; WD-MAX

133.35 mm

MT4C1024TG-7LIT

Micron Technology

FAST PAGE DRAM

INDUSTRIAL

20

TSOP2

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

75 mA

1048576 words

SEPARATE

5

5

1

SMALL OUTLINE, THIN PROFILE

TSSOP20/26,.36

DRAMs

1.27 mm

85 Cel

3-STATE

1MX1

1M

-40 Cel

TIN LEAD

DUAL

1

R-PDSO-G20

5.5 V

1.2 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

e0

.0002 Amp

17.14 mm

70 ns

MT9HVF12872PKIZ-80EXX

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

244

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

134217728 words

YES

1.8

72

MICROELECTRONIC ASSEMBLY

85 Cel

128MX72

128M

-40 Cel

DUAL

1

R-XDMA-N244

1.9 V

18.3 mm

3.8 mm

9663676416 bit

1.7 V

SELF REFRESH; WD-MAX

82 mm

MT4HTF6464AIZ-1GAH1

Micron Technology

DDR DRAM MODULE

INDUSTRIAL

240

DIMM

RECTANGULAR

UNSPECIFIED

SINGLE BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

67108864 words

YES

1.8

64

MICROELECTRONIC ASSEMBLY

85 Cel

64MX64

64M

-40 Cel

DUAL

1

R-XDMA-N240

1.9 V

2.7 mm

30.175 mm

Not Qualified

4294967296 bit

1.7 V

SELF CONTAINED REFRESH

133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.