Micron Technology DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT9VDDT6472PHY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT9HVF3272KY-40EXX	Micron Technology	DDR DRAM MODULE	OTHER	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT42L128M16D1MP-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX16	128M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT18JSF25672PDIZ-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT42L384M32D3LM-25WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			384MX32	384M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT4LC4M4E9DJ-5TR	Micron Technology	EDO DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.17 mm	50 ns
MT16VDDT12864AY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4480 mA	134217728 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	8589934592 bit						.08 Amp			.75 ns
MT49H16M18FM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT18VDDT1672G-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT42L128M32D2KJ-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M32D2MP-25AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT49H16M36BM-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	VBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		36	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO/SELF REFRESH	e1					18.5 mm
MT8LSDT6432UY-75XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		64MX32	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT18VDDT12872Y-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4LC4M16U6TG-60TR	Micron Technology	EDO DRAM		50	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm		3-STATE	4MX16	4M		TIN LEAD	DUAL	1	R-PDSO-G50		3.47 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH	e0					20.95 mm	60 ns
MT8VDDT1664HDG-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1452 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT4C16M1D1DJ-6	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ24/28,.44	SRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.66 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.44 mm	60 ns
MT18VDDT6472LAG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4410 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	4831838208 bit									.8 ns
MT36HTF51272FDY-667XX	Micron Technology	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY						512MX72	512M		GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4C1670TG-7LTR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	40	TSOP2	256	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	GULL WING	ASYNCHRONOUS		65536 words				5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.41 mm	70 ns
MT18HTF12872PDY-53ED2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2088 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	9663676416 bit			e3			.126 Amp			.5 ns
MT9HTF12872AY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	9663676416 bit					260				.45 ns
MT16LDT464M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.008 Amp			70 ns
MT42L128M64D2EV-18AT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B253		1.95 V	1.2 mm		11 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11 mm
MT36RTF51272FZ-667H1D6	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES	COMMON	1.5	1.5,1.55	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.455 V	AUTO/SELF REFRESH						133.35 mm
MT4LC16M4H9TG-6S	Micron Technology	EDO DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	160 mA	16777216 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.0005 Amp		20.96 mm	60 ns
MT8VDDT1664AG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2200 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N184	1			125 MHz		Not Qualified	1073741824 bit						.024 Amp			.8 ns
MT42L128M64D2TK-18AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	128MX64	128M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm	533 MHz	10 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
EBJ81UG8BBU0-DJ-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		2GX64	2G	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm		137438953472 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm
MT42L128M32D3LE-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L192M64D3LM-18AIT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16		.4 mm	85 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	533 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT4LC2M8E7DJ-7TR	Micron Technology	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.44 mm	70 ns
MT18VDDT3272AY-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3222 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	2415919104 bit						.027 Amp			.7 ns
MT18LSDT3272G-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5580 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2415919104 bit						.036 Amp			5.4 ns
MT3D2569MP-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	270 mA	262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	12.954 mm			Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.003 Amp			60 ns
MTA18ASF1G72AZ-1G9XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT9HTF12872FY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT42L256M32D3MG-25IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm			256MX32	256M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT4C4256-10L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	1	R-PDIP-T20		5.5 V	4.32 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0002 Amp		24.635 mm	100 ns
MT49H64M9CSJ-33:B	Micron Technology	DDR DRAM	OTHER	144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		530 mA	67108864 words	2,4,8		SEPARATE		1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	85 Cel	3-STATE	64MX9	64M	0 Cel		BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	603979776 bit						.005 Amp	2,4,8		.25 ns
MT42L256M64D4MP-25AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT18VDDT6472LAY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4C8512TG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.41 mm	80 ns
MT8JTF25664AIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT16JSS51264HY-1G1A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3560 mA	536870912 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL		R-PDMA-N204				533 MHz		Not Qualified	34359738368 bit						.16 Amp
MT4C16257D32AWC2-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	51	DIE	512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		262144 words				5		16	UNCASED CHIP				70 Cel	3-STATE	256KX16	256K	0 Cel		UPPER	1	X-XUUC-N51		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
MT4C16M1A1DJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.66 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.44 mm	80 ns
MT18KBZS1G72PKIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	17.91 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						82 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.