Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT9HTF12872FY-667E1D4	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY							128MX72	128M			Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4	30	260			133.35 mm
MT62F512M32D2DR-031WT:B	Micron Technology	LPDDR5 DRAM	OTHER							YES	1	CMOS		BALL			536870912 words				1.05		32						85 Cel		512MX32	512M		-25 Cel		BOTTOM	1					3200 MHz			17179869184 bit
MT16LD232M-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	648 mA	2097152 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M		0 Cel		SINGLE	1	R-XSMA-N72	1	3.6 V	25.654 mm			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.0016 Amp			60 ns
MT4C8512DJ-6L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.25 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0			.0002 Amp		18.44 mm	60 ns
MT8VDDT1664AY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2600 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT4C1024RG-8ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel	3-STATE	1MX1	1M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3					17.14 mm	80 ns
MT36HTS51272Y-667A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	5256 mA	536870912 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel	3-STATE	512MX72	512M		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm	333 MHz	30.175 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			.18 Amp		133.35 mm	.45 ns
MT36KDYS2G72PZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		5.87 mm		154618822656 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT8LSDT3264AGI-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2160 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	85 Cel	3-STATE	32MX64	32M		-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.016 Amp			5.4 ns
MT4C16261Z-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	150 mA	262144 words		NO	COMMON	5	5	16	IN-LINE	ZIP40,.1		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K		0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T40		5.5 V	12.7 mm		2.885 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		50.71 mm	80 ns
MT42L64M32D2KL-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			64MX32	64M				BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT18HTS51272PKY-667A1	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3177 mA	536870912 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24		Other Memory ICs	.6 mm	70 Cel	3-STATE	512MX72	512M		0 Cel	MATTE TIN	DUAL		R-PDMA-N244	1			333 MHz		Not Qualified	38654705664 bit			e3			.144 Amp			.45 ns
EBE52UD6ABSA-5C	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					85 Cel		64MX64	64M		0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT9VDDF6472Y-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3645 mA	67108864 words		YES	COMMON	2.5	2.5	8	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	28.73 mm	167 MHz	3.175 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX	e4			.045 Amp		133.35 mm	.7 ns
MT5VDDT3272AG-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M		0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT18HTF12872PZ-667G1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2520 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M		0 Cel	GOLD	DUAL		R-PDMA-N240				333 MHz		Not Qualified	9663676416 bit			e4			.126 Amp			.45 ns
MT8LSDT264AG-662XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2097152 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M		0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH							7.5 ns
MT4D51232M-6XTR	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		524288 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	512KX32	512K		0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
MTA36ASF4G72PZ-3G2XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		4GX72	4G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT18D836-7X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1028 mA	8388608 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M		0 Cel		SINGLE		R-PSMA-N72						Not Qualified	301989888 bit						.048 Amp			70 ns
MT42L128M16D1LF-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	FBGA	8192	SQUARE	PLASTIC/EPOXY		YES		CMOS	AEC-Q100	BALL		220 mA	134217728 words	4,8,16		COMMON		1.2,1.8	16	GRID ARRAY, FINE PITCH	BGA168,23X23,20		DRAMs	.5 mm	105 Cel	3-STATE	128MX16	128M		-40 Cel		BOTTOM		S-PBGA-B168				533 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT42L96M64D3KU-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	4.7 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			96MX64	96M				BOTTOM	1	S-PBGA-B216		1.95 V	.9 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT36HTF25672PY-80ED2	Micron Technology
MTV46V64M16P-75IT:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	495 mA	67108864 words	2,4,8	YES	COMMON	2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46			.65 mm	85 Cel	3-STATE	64MX16	64M		-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
MT36KSZF51272PDZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		512MX72	512M		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		7.25 mm	Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX	e4					133.35 mm
MT4LC8M8W4TG-60	Micron Technology	EDO DRAM		32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		8388608 words				3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm		3-STATE	8MX8	8M			TIN LEAD	DUAL	1	R-PDSO-G32		3.47 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH	e0					20.96 mm	60 ns
MT4C2M8B1DL-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					20.98 mm	60 ns
MT16LSDT1664AG-10B	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1920 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M		0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	1073741824 bit						.032 Amp			6 ns
MT9HTF12872KY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT4C4256DJ-12VLTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		3.45 V	3.61 mm		7.67 mm	Not Qualified	1048576 bit	3.15 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.17 mm	120 ns
MT36JBZS51272PY-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		1GX4	1G		0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT9VDDT3272HG-202	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		Other Memory ICs	.6 mm	70 Cel	3-STATE	32MX72	32M		0 Cel		DUAL		R-PDMA-N200				125 MHz		Not Qualified	2415919104 bit						.036 Amp			.8 ns
MT72JSZS4G72LZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		4GX72	4G		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm				309237645312 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L256M32D2GVLF-18AT:A	Micron Technology	LPDDR2 DRAM
MT42L192M64D3MP-3WT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX64	192M				BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT18KSF25672PY-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words				1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.4175 V				Not Qualified	19327352832 bit	1.2825 V	AUTO REFRESH	e4
MT16HTF12864HZ-80EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3680 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			400 MHz		Not Qualified	8589934592 bit			e3			.112 Amp
MT4VDDT3264AY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1400 mA	33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	55 Cel	3-STATE	32MX64	32M		0 Cel	MATTE TIN	DUAL		R-PDMA-N184	1			133 MHz		Not Qualified	2147483648 bit			e3						.75 ns
MT4LC8M8B6DJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	165 mA	8388608 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	8MX8	8M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J32		3.6 V	3.68 mm		10.21 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.98 mm	60 ns
MT42L192M64D3EV-25AAT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20			.5 mm	105 Cel	3-STATE	192MX64	192M		-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1.2 mm	400 MHz	11 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
MT16LSDT3264AY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					65 Cel		32MX64	32M		0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT4LC1M16C3TG-6LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					20.95 mm	60 ns
MT42L128M32D1TJ-25AAT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25			.65 mm	105 Cel	3-STATE	128MX32	128M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm	400 MHz	10 mm		4294967296 bit	1.14 V	SELF REFRESH				.00001 Amp	4,8,16	11.5 mm
MT5VDDT1672HY-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX72	16M		0 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	1207959552 bit						.02 Amp			.75 ns
MT42L96M64D4KH-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			96MX64	96M				BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT72KSZS1G72PZ-1G1XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		1GX72	1G		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4
MT36LD872AG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1890 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M		0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V	38.1 mm			Not Qualified	603979776 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.018 Amp			60 ns
MT42L16M32D1AB-3AIT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	165 mA	16777216 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA121,11X15,20			.5 mm	85 Cel	3-STATE	16MX32	16M		-40 Cel		BOTTOM	1	R-PBGA-B121		1.3 V	.8 mm	333 MHz	6.5 mm		536870912 bit	1.14 V					.002 Amp	4,8,16	8 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.