Micron Technology DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA18ASF2G72PDZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT18VDDT12872LAG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M		0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT8JTF12864AZ-1G1F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3120 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL		R-PDMA-N240				533 MHz		Not Qualified	8589934592 bit						.096 Amp
MT42L256M32D2LH-18WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			256MX32	256M				BOTTOM	1	S-PBGA-B216		1.95 V	.65 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT16HTF12864HIZ-40EE1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2640 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	128MX64	128M		-40 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	8589934592 bit						.112 Amp			.6 ns
MT36HTF51272FY-667E1N7	Micron Technology
MT42L192M32D1KL-18AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	6.5 mA	201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX32	192M				BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT42L16M32D1AB-25WT:A	Micron Technology	LPDDR2 DRAM		121	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			16MX32	16M				BOTTOM	1	R-PBGA-B121		1.3 V	.8 mm		6.5 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						8 mm
MT18VDDT6472DG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M		0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT4JSF12864HZ-1G1K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M		0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT16D51232G-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	576 mA	524288 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K		0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	25.654 mm			Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.016 Amp			80 ns
MT4LC4M4B1SJ-6S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel		4MX4	4M		0 Cel		DUAL	1	R-PDSO-J24		3.6 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH						17.17 mm	60 ns
SUU1G8Z21CD8SA-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78			1.2 mm	1067 MHz	7.5 mm		8589934592 bit							4,8	11 mm
MT16VDDF12864HG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4480 mA	134217728 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL		R-PDMA-N200	1			125 MHz		Not Qualified	8589934592 bit						.08 Amp			.8 ns
MT16HTF12864AY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M		0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4						.5 ns
MT4LC2M8A1DL-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	60 mA	2097152 words		NO	COMMON	3	3/3.3	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.3 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0004 Amp		20.98 mm	80 ns
MT42L64M64D4KP-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			64MX64	64M				BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT16VDDF12864AG-40BD1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3640 mA	134217728 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX64	128M		0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	8589934592 bit						.08 Amp			.7 ns
MT42L256M16D1MC-3AT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX16	256M				BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4C1024DJ-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX1	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					17.17 mm	60 ns
MT8LSDT3232UY-8G1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2480 mA	33554432 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	32MX32	32M		0 Cel		DUAL		R-PDMA-N100				125 MHz		Not Qualified	1073741824 bit						.016 Amp			6 ns
MT2D132G-70B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	1MX32	1M		0 Cel		SINGLE	1	R-XSMA-N72		5.25 V				Not Qualified	33554432 bit	4.75 V	RAS ONLY/CAS BEFORE RAS REFRESH							70 ns
MT36VDDF12872G-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M		0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT4VDDT3264AIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		32MX64	32M		-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT42L256M64D4MC-3AT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX64	256M				BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT18JSF51272PDZ-1G6D1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4023 mA	536870912 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M		0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			800 MHz		Not Qualified	38654705664 bit			e3			.216 Amp			.225 ns
MT5LSDT872AIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					85 Cel		8MX72	8M		-40 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT4LSDT464LHG-662B5	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M		0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH							7.5 ns
MT8LSDT864LHY-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1520 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M		0 Cel	MATTE TIN	DUAL		R-PDMA-N144	1		31.75 mm	125 MHz		Not Qualified	536870912 bit			e3			.016 Amp			6 ns
MT42L384M32D3LD-3AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			384MX32	384M				BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M32D4KH-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX32	128M				BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT49H16M36CHU-25IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX36	16M		-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT16VDDT6464AY-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		64MX64	64M		0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4294967296 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
SUU1G8Z01AD8WE-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX8	1G		0 Cel		BOTTOM	1	R-PBGA-B78			1.2 mm	1067 MHz	8 mm		8589934592 bit							4,8	12 mm
MTA8ATF51264AZ-2G3XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT42L128M32D1TJ-25AIT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25			.65 mm	85 Cel	3-STATE	128MX32	128M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm	400 MHz	10 mm		4294967296 bit	1.14 V	SELF REFRESH				.00001 Amp	4,8,16	11.5 mm
MT4C2M8A1DJ-8STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					18.44 mm	80 ns
MT4LC1M16C3TG-7STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel	3-STATE	1MX16	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					20.95 mm	70 ns
MT4C1004JDJ-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words		YES		5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					17.17 mm	60 ns
MT4LSDT864HY-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1240 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	65 Cel	3-STATE	8MX64	8M		0 Cel	MATTE TIN	DUAL	1	R-PDMA-N144	1	3.6 V	25.53 mm	133 MHz	3.8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e3			.008 Amp		67.585 mm	5.4 ns
M38510/24601BEC	Micron Technology																																										Not Qualified
MT42L256M16D1LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX16	256M				BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L256M16D1LM-3AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	178 mA	268435456 words	4,8,16	YES	COMMON	1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	256MX16	256M		-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	333 MHz	12 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT9LSDT1672AY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					65 Cel		16MX72	16M		0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT9HVF12872RHIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M		-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT18JSF51272AIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		512MX72	512M		-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4C1M16C5DJ-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	140 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		27.33 mm	80 ns
MT36VDDT12872G-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6372 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M		0 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	9663676416 bit									.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.