Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT18JBZF25672PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		256MX8	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX				133.35 mm
MT18JSF1G72AIZ-1G9XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm
MT42L128M32D1LE-18AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				12 mm
MT5VDDT872HY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	603979776 bit	2.3 V	AUTO/SELF REFRESH	e4				.75 ns
PRM64M16ZD8WBU-075E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel		1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1333.33 MHz	8 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				14 mm
MT5VDDT872HIG-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	8MX72	8M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	603979776 bit							.75 ns
MT18KSF51272HZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N204		1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V SUPPLY; WD-MAX				67.6 mm
MT8JSF25664HY-1G5B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3680 mA	268435456 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	17179869184 bit				.08 Amp
MT4HTF3264HY-80ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1480 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				400 MHz		Not Qualified	2147483648 bit				.028 Amp			.4 ns
MT49H32M18BM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	32MX18	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	.048 Amp		18.5 mm	20 ns
MT16HTF12864AY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		30.175 mm	Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4			133.35 mm
MT18VDDT3272Y-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5940 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	2415919104 bit				.054 Amp			.75 ns
MT42L512M32D4LG-18WT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	536870912 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			512MX32	512M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				12 mm	10 ns
MT42L128M32D1LH-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.65 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				12 mm
MT42L192M64D3EU-25WT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX64	192M			BOTTOM	1	S-PBGA-B253		1.95 V	.9 mm		11 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				11 mm	10 ns
MT4C10016DJ-5V	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SOJ24/28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-J24						Not Qualified	16777216 bit			e0				50 ns
MT8VDDT3264HY-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4				.8 ns
MTV46V128M8TG-6T:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	525 mA	134217728 words	2,4,8	YES	COMMON	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46			.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH		.01 Amp	2,4,8	22.22 mm	.7 ns
MT8LDT432HG-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	880 mA	4194304 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp			50 ns
MT42L128M32D1LK-3AIT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	178 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	85 Cel	3-STATE	128MX32	128M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	333 MHz	12 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY		.002 Amp	4,8,16	12 mm
MT42L64M64D2LE-18IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				12 mm
MT42L256M32D2EU-25AIT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA253,17X17,20			.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.9 mm	400 MHz	11 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY			4,8,16	11 mm
MT42L512M32D4LD-3WT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	536870912 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			512MX32	512M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				14 mm	10 ns
MT4LC16256TG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			18.41 mm	70 ns
MT4C1024TG-8ITTR	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			17.14 mm	80 ns
MT4LSDT1664LWY-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e4				6 ns
MT42L128M64D3MH-3AT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			128MX64	128M			BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		11 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				11.5 mm
MT16DT51232M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		524288 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel		512KX32	512K	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					70 ns
MT16VDDT6464AY-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	4294967296 bit							.75 ns
MT2D132M-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	340 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.011 Amp			60 ns
MT4D51232M-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	394 mA	524288 words			COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	512KX32	512K	0 Cel		SINGLE	1	R-XSMA-N72	1	5.25 V				Not Qualified	16777216 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH		.004 Amp			50 ns
MT42L96M64D3MQ-3AT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	240	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	105 Cel		96MX64	96M	-40 Cel		BOTTOM	1	S-PBGA-B240		1.9 V	.9 mm		14 mm		6442450944 bit	1.7 V	AUTO/SELF REFRESH				14 mm
EBJ40UG8EFU5-DJL-F	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		34359738368 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX				67.6 mm
MT42L256M64D4EU-18AAT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA253,17X17,20			.5 mm	105 Cel	3-STATE	256MX64	256M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.9 mm	533 MHz	11 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY			4,8,16	11 mm
MT8LSDT1664HIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					85 Cel		16MX64	16M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e4			67.585 mm	5.4 ns
MTA36ASF4G72PZ-2G7XX	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				.85 mm	85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				133.35 mm
SUU1G8Z01BD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1.2 mm	1067 MHz	8 mm		8589934592 bit					4,8	12 mm
MT18HTF25672PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		30.175 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4			133.35 mm
MT4C4001JD22AWC2-6	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP						3-STATE	1MX4	1M			UPPER	1	X-XUUC-N30						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					60 ns
MT4C10016TG-7V	Micron Technology	FAST PAGE DRAM	COMMERCIAL		SOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			16777216 words		NO	SEPARATE	3.3	3.3	1	SMALL OUTLINE	SO(UNSPEC)		DRAMs		70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL								Not Qualified	16777216 bit			e0				70 ns
SMG2048M8ZD8DVN-083J	Micron Technology	DDR4 DRAM	OTHER	78		8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8						95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V		1200.48 MHz			17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT4LC4M4G6DJ-70	Micron Technology	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		3.47 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				17.17 mm	70 ns
MT9VDDF1672Y-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4				.75 ns
MT5VDDT872AG-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1675 mA	8388608 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	8MX72	8M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	603979776 bit				.015 Amp			.75 ns
MT9LSDT3272Y-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2430 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	2415919104 bit				.018 Amp			6 ns
MT42L256M32D2MP-3AAT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20			.5 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	S-PBGA-B220		1.3 V	.8 mm	333 MHz	14 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY			4,8,16	14 mm
MT2D18N-10	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512		PLASTIC/EPOXY		NO		CMOS			160 mA	1048576 words			COMMON	5	5	8		SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn/Pb)	SINGLE					13.0302 mm			Not Qualified	8388608 bit			e0	.002 Amp			100 ns
MT49H32M18CFM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			18.5 mm	20 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.