Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT42L192M64D3LM-3WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			192MX64	192M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT42L128M32D2MP-3IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M32D4KH-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT4VDDT864AG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT18VDDS6472HI-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT42L192M64D3LG-25AAT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20		.5 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm	400 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT18VDDT12872AY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
EDJ5304AASE-DJ-E	Micron Technology	DDR3 DRAM		78	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		4	GRID ARRAY						128MX4	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V				Not Qualified	536870912 bit	1.425 V	AUTO/SELF REFRESH	e1
MT18VDDT12872LAIG-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT16KTF2G64AZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		137438953472 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
PRN1024M4V91AG8RGF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	534.7 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
MT9LSDT1672AIY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2070 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel		DUAL		R-PDMA-N168				143 MHz		Not Qualified	1207959552 bit						.018 Amp			5.4 ns
MT9JBF12872PY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18 mm			Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L128M32D1LH-25AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.65 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT8LDT864HG-6XS	Micron Technology	EDO DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1320 mA	8388608 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V				Not Qualified	536870912 bit	3 V	CAS BEFORE RAS REFRESH/SELF REFRESH				.004 Amp			60 ns
SUM2G8Z32DD8JC-093DG	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1067 MHz	9 mm		17179869184 bit	1.14 V						4,8	11 mm
EDF8132A1MC-GD-F-R	Micron Technology	LPDDR3 DRAM		178	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm			256MX32	256M			BOTTOM	1	R-PBGA-B178		1.3 V	.9 mm		11.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
MT36KSZF51272PDZ-80CF1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	38654705664 bit	1.283 V	AUTO/SELF REFRESH	e4
MT4C8513Z-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	120 mA	524288 words		NO	COMMON	5	5	8	IN-LINE	ZIP28,.1	DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T28		5.25 V	10.16 mm		2.795 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		35.455 mm	60 ns
MT49H16M36HT-25:A	Micron Technology	DDR DRAM	COMMERCIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1100 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	70 Cel	3-STATE	16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.048 Amp		18.5 mm	.2 ns
MT42L128M64D2MP-18AIT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20		.5 mm	85 Cel	3-STATE	128MX64	128M	-40 Cel		BOTTOM	1	S-PBGA-B220		1.3 V	.8 mm	533 MHz	14 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	14 mm
MT18HTS51272PKY-53EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4
MT18VDDT3272LAY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4LSDT864AG-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				65 Cel		8MX64	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT16LDT164M-7S	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1120 mA	1048576 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.4 mm			Not Qualified	67108864 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH				.0016 Amp			70 ns
MT42L96M64D2KH-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	6.5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			96MX64	96M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT42L96M64D4KH-18IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	6.5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			96MX64	96M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT24DT472M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		72	MICROELECTRONIC ASSEMBLY				70 Cel		4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	301989888 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
MT8VR6416AG-850XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		64MX16	64M	0 Cel		DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	1073741824 bit	2.37 V	SELF CONTAINED REFRESH
MT43C4257DJ-10	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	95 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40		5.25 V	3.81 mm		10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.002 Amp		26.06 mm	100 ns
MT42L256M32D2EV-25AIT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20		.5 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1.2 mm	400 MHz	11 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
MT49H64M9CFM-33:B	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	530 mA	67108864 words	2,4,8		SEPARATE	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX9	64M	0 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.005 Amp	2,4,8	18.5 mm	20 ns
MT9LSDT872Y-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1890 mA	8388608 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	55 Cel	3-STATE	8MX72	8M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	603979776 bit						.018 Amp			5.4 ns
MT4C4260-10IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3	DRAMs	2.54 mm	85 Cel	3-STATE	256KX4	256K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.0002 Amp			100 ns
MT9VDDT6472AG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT42L128M64D1LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT16LSDT12864AG-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4410 mA	134217728 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	65 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	8589934592 bit						.063 Amp			6 ns
MT42L192M64D3MP-25AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX64	192M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT8LSDT264AG-10B	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1000 mA	2097152 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	134217728 bit						.024 Amp			6 ns
MT16LSDT1664AG-662C2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		SINGLE	1	R-XSMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				7 ns
MT8VDDT6464HY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3200 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4294967296 bit						.04 Amp			.75 ns
MT24D472M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		72	MICROELECTRONIC ASSEMBLY				70 Cel		4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168		5.5 V				Not Qualified	301989888 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH							70 ns
MT9KSF25672PZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words				1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.283 V	AUTO REFRESH	e4					133.35 mm
MT18LDT1672FG-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	2160 mA	16777216 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	50.8 mm			Not Qualified	1207959552 bit	3 V	CAS BEFORE RAS REFRESH				.009 Amp			60 ns
MT18JSF51272PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	SELF CONTAINED REFRESH	e4					133.35 mm
MT4LC16M4D9DJ-52	Micron Technology	EDO DRAM		32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE			1.27 mm		3-STATE	16MX4	16M			DUAL	1	R-PDSO-J32		3.47 V	3.81 mm		10.21 mm	Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH						20.98 mm	52 ns
MT42L256M32D2TK-25AIT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	85 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm	400 MHz	10 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
MT9VDDT6472PHY-262	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4831838208 bit						.045 Amp			.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.