Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT36HTF51272FZ-80EH1D6	Micron Technology	DDR DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm		3-STATE	512MX72	512M		Gold (Au)	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	400 MHz	4 mm	Not Qualified	38654705664 bit	1.7 V	WD-MAX	e4					133.35 mm
MT42C8128TG-8LTR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0					18.41 mm	80 ns
MT42C8128DJ-8LTR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		131072 words			5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40		5.5 V	3.81 mm		10.21 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	e0					26.06 mm	80 ns
MT8VDDT3264HDG-265A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		32MX64	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT36HVZS51272PY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	3.99 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
EBJ34LH4E6PA-GN-F	Micron Technology	DDR3L DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	8220 mA	4294967296 words	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY	DIMM240,40		1 mm	95 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.35 mm		8.5 mm		309237645312 bit	1.283 V							133.35 mm
M18HVF12872PTY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4LC4M4E8DJ-6STR	Micron Technology	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words	YES		3.3		4	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0					17.17 mm	60 ns
MT8JTF12864AZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		4800 mA	134217728 words		COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				800 MHz		Not Qualified	8589934592 bit						.096 Amp
MT9HTF25672PZ-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L256M32D4KJ-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX32	256M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D3LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4LC2M8A2TL-8STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words	YES		3		8	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.3 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					20.96 mm	80 ns
MT49H32M9CBM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX9	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260		2,4,8	18.5 mm	.25 ns
MT4C4001JRG-6L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		4	SMALL OUTLINE, THIN PROFILE			1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3					17.14 mm	60 ns
MT42L256M64D4MP-25WT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT9HTF12872KY-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT9HVF6472RHIY-80EF1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4
MT18VDDT6472PHY-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
MT16VDDT12864AY-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words	YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	8589934592 bit	2.5 V	AUTO/SELF REFRESH	e4						.7 ns
MT4C1M16C5TG-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words			5		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					20.95 mm	60 ns
MT9JDF25672AZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
MT32LD864AG-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1792 mA	8388608 words		COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168			38.354 mm			Not Qualified	536870912 bit						.016 Amp			70 ns
MT5HTF1672PKY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				55 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	1207959552 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT4C2M8A1TL-6S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	110 mA	2097152 words	YES	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0			.0002 Amp		20.96 mm	60 ns
MT4C2M8A1DJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	2097152 words	NO	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44	DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.44 mm	60 ns
MT4C8512D18AWC1-8	Micron Technology	OTHER DRAM	COMMERCIAL	65	DIE	1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		524288 words			5		8	UNCASED CHIP				70 Cel	3-STATE	512KX8	512K	0 Cel		UPPER	1	X-XUUC-N65		5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT36VDDT12872DG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		8820 mA	134217728 words		COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	9663676416 bit						.144 Amp			.75 ns
MT49H8M36CFM-25	Micron Technology	DDR DRAM	INDUSTRIAL	144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words			1.8		36	GRID ARRAY			1 mm	85 Cel		8MX36	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT1259C-15M070	Micron Technology	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC		NO		MOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		55 mA	262144 words		SEPARATE	5	5	1	IN-LINE	DIP16,.3	DRAMs	2.54 mm	110 Cel	3-STATE	256KX1	256K	-55 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T16						Not Qualified	262144 bit			e0						150 ns
MT43C4258TG-8TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words			5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40		5.25 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.41 mm	80 ns
MT42L128M16D3KH-18IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX16	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M64D2GV-25AT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			128MX64	128M			BOTTOM	1	R-PBGA-B134		1.95 V	.85 mm		10 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT4C1004JD22AWC2-6	Micron Technology	FAST PAGE DRAM		30	DIE		UNSPECIFIED	UNSPECIFIED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words			5		1	UNCASED CHIP					3-STATE	4MX1	4M			UPPER	1	X-XUUC-N30						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							60 ns
MT9VDDT12872PHG-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT18HTF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1728 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm	333 MHz	4 mm	Not Qualified	19327352832 bit	1.7 V	SELF CONTAINED REFRESH; WD-MAX	e4			.126 Amp		133.35 mm	.45 ns
MT18VDDT6472PHG-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT8JSF12864HY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words	YES		1.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	e4
MT4LSDT1632UY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		210 mA	16777216 words		COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	536870912 bit			e3			.002 Amp			5.4 ns
MT49H16M36HT-25	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words			1.8		36	GRID ARRAY, THIN PROFILE			1 mm	95 Cel		16MX36	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT18HTF25672G-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			268435456 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit									.6 ns
MTA18ASF2G72XF1Z-2G6V21AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	YES		1.2		72	MICROELECTRONIC ASSEMBLY				95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		5.8 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA18ASF2G72XF1Z-2G6XXXXX	Micron Technology	DDR4 DRAM																																												NOT SPECIFIED	NOT SPECIFIED
MT18VDDT3272DG-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words	YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT36HTF1G72PZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT5HTF3272KY-40ED1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1700 mA	33554432 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N244		1.9 V		200 MHz		Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4			.035 Amp			.9 ns
MT4LSDT164GHG-143XX	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1048576 words			3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		1MX64	1M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	67108864 bit	3 V								5.5 ns
MT4KTF25664HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words	YES		1.35		64	MICROELECTRONIC ASSEMBLY				70 Cel		256MX64	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX		30	260			67.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.