Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA9ASF1G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1710 mA	1073741824 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1612 MHz	3.9 mm		77309411328 bit	1.14 V					.198 Amp	8	133.35 mm
MT18LSDF6472G-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		4860 mA	67108864 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	55 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	4831838208 bit						.036 Amp			6 ns
MT9VDDT1672HIY-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3195 mA	16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	16MX72	16M	-40 Cel		DUAL		R-PDMA-N200				166 MHz		Not Qualified	1207959552 bit									.7 ns
EDS1232CABB-10L-E	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		BALL		250 mA	4194304 words	1,2,4,8,FP		COMMON	2.5	2.5	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX32	4M	0 Cel		BOTTOM		R-PBGA-B90				100 MHz		Not Qualified	134217728 bit						.001 Amp	1,2,4,8		6 ns
MT42L64M32D1MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			64MX32	64M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT49H16M36FM-33:A	Micron Technology	DDR DRAM	COMMERCIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	914 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	70 Cel	3-STATE	16MX36	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.048 Amp		18.5 mm	20 ns
MT42L128M32D2KJ-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT4C1004EC-10/883C	Micron Technology	FAST PAGE DRAM	MILITARY	20	QCCN	1024	SQUARE	CERAMIC		YES		CMOS	38535Q/M;38534H;883B	NO LEAD			4194304 words		NO	SEPARATE	5	5	1	CHIP CARRIER	LCC20,.35SQ		DRAMs	1.27 mm	125 Cel	3-STATE	4MX1	4M	-55 Cel	TIN LEAD	QUAD		S-XQCC-N20						Not Qualified	4194304 bit			e0						100 ns
MT42L192M64D3LM-18AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	533 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
PRN512M16Z91BD8HA-93E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8		COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96			1.2 mm	1067 MHz	9 mm		8589934592 bit							4,8	14 mm
MT9KSF25672AKIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	30.15 mm		3.8 mm		19327352832 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						82 mm
MT18KSF25672HZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				.6 mm	70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.45 V	30.15 mm				19327352832 bit	1.283 V	AUTO/SELF REFRESH	e4					67.6 mm
MT42L96M64D1MG-25AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	5 mA	100663296 words		YES		1.8		64	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			96MX64	96M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm	10 ns
MT18LDT472G-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	2160 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	36	Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.009 Amp			60 ns
MTA8ATF1G64HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				.5 mm	85 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT4LDT164HG-6L	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	144	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		680 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N144						Not Qualified	67108864 bit						.0006 Amp			60 ns
MT9HTF12872FY-53EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L256M32D2LF-18WT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT49H32M9CHU-25	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		9	GRID ARRAY, THIN PROFILE				1 mm			32MX9	32M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	.25 ns
MT4LC16257TG-7STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					18.41 mm	70 ns
MT9HTF3272AY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2250 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N240				333 MHz		Not Qualified	2415919104 bit					260				.45 ns
MT49H32M18CHU-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX18	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm	20 ns
MT9VDDT1672AY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT42L256M32D2GVLH-18WT:A	Micron Technology	LPDDR2 DRAM
MT16VDDF12864HY-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
MT36VDDF25672G-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT18LSDT3272LAG-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					65 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT42L192M32D4LD-3AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	4.7 mA	201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT42L128M32D2KU-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.9 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT8VDDT1664HDG-26AF2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1512 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT16JSF25664HIZ-1G0XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		256MX64	256M	-40 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH
MT16KTF25664HZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		256MX64	256M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm				17179869184 bit	1.283 V	AUTO/SELF REFRESH	e4					67.6 mm
MT4C4007JDJ-6	Micron Technology	EDO DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	110 mA	1048576 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.17 mm	60 ns
MT49H16M36FM-25IT:A	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1100 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	16MX36	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.048 Amp		18.5 mm	20 ns
MT4C1004JDJ-7STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words		YES		5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					17.17 mm	70 ns
MT4LSDT832UDY-75	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1240 mA	8388608 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	MATTE TIN	DUAL		R-PDMA-N100	1			133 MHz		Not Qualified	268435456 bit			e3			.008 Amp			5.4 ns
MT4LC4M4E8DJ-5STR	Micron Technology	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words		YES		3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		3.6 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0					17.17 mm	50 ns
MT36JSF2G72PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF2G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES				72	MICROELECTRONIC ASSEMBLY					95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288			31.4 mm		3.9 mm		154618822656 bit		AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT9HTF12872AZY-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
MT4LC4M16F5TG-5TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0	30	235			20.95 mm	50 ns
MT4LC16M4T8TG-5	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	170 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		20.96 mm	50 ns
MT18HTF51272AY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4
MT4VDDT3264HY-40BJ1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1920 mA	33554432 words		YES	COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		2.7 V	31.9 mm	200 MHz	2.45 mm	Not Qualified	2147483648 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm	.7 ns
MT4LC1M16E5TG-7STR	Micron Technology	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0					20.95 mm	70 ns
MT8LSFT3232RH-13E	Micron Technology
MT9VDDT3272HG-265A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e0						.75 ns
MT9VDDT3272HIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		32MX72	32M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.