Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT49H16M18CBM-25	Micron Technology	DDR DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32		DRAMs	1 mm		3-STATE	16MX18	16M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	.93 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1		260		2,4,8	18.5 mm	.25 ns
MT4LC1M16C3DJ-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	3.3	3/3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		3.6 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0004 Amp		27.33 mm	80 ns
MT42L192M64D3LF-3AAT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA168,23X23,20			.5 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.75 mm	333 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT42L192M64D3LM-25AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	400 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT18KSF1G72PZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT36VDDT25672G-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT18JSF51272PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6030 mA	536870912 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	512MX72	512M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240		1.575 V	4 mm	533 MHz	30.175 mm	Not Qualified	38654705664 bit	1.425 V	SELF CONTAINED REFRESH	e4			.216 Amp		133.35 mm	.3 ns
MT9HTF6472PKZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		30 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					82 mm
MT42L128M32D1LM-25AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	128MX32	128M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	400 MHz	12 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY				.002 Amp	4,8,16	12 mm
MT42L64M64D4LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4JTF6464HY-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT4LSDT832UG-10D1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words				3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		8MX32	8M	0 Cel		DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	268435456 bit	3 V	AUTO REFRESH							7 ns
MT16LDT232G-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	648 mA	2097152 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72	1	3.6 V	25.654 mm			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			60 ns
MT42L256M32D1KL-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MTV46V256M4TG-75:A	Micron Technology	DDR1 DRAM		66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	485 mA	268435456 words	2,4,8	YES	COMMON	2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46			.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH				.01 Amp	2,4,8	22.22 mm	.75 ns
MT42L256M64D4GVMP-25AT:A	Micron Technology	LPDDR2 DRAM
MT42L256M16D1LK-25AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	400 MHz	12 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT18KSF51272PDZ-1G4P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT18JSF25672PZ-1G1F1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4500 mA	268435456 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	19327352832 bit			e3			.216 Amp			.3 ns
MT42L256M64D4LP-25WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			256MX64	256M			BOTTOM	1	S-PBGA-B216		1.95 V	.82 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L128M32D1LH-25WT:A	Micron Technology	LPDDR2 DRAM	OTHER	216	VFBGA	8192	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	134217728 words	4,8,16	YES	COMMON	1.8	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16		DRAMs	.4 mm	85 Cel	3-STATE	128MX32	128M	-30 Cel		BOTTOM	1	S-PBGA-B216		1.95 V	.65 mm	400 MHz	12 mm	Not Qualified	4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM				.0001 Amp	4,8,16	12 mm	5.5 ns
MT4LDT464HG-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	660 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N144	1	3.6 V				Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
MT4LC4M4B1D24ADC1	Micron Technology	EDO DRAM		57	DIE	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				3.3		4	UNCASED CHIP						3-STATE	4MX4	4M			UPPER	1	R-XUUC-N57						Not Qualified	16777216 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT4C4256-15	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		50 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.001 Amp			150 ns
MT42L128M32D1GVLD-25AT:A	Micron Technology	LPDDR2 DRAM
MT36VDDT12872DY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT16VR12816AG-750XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		16	MICROELECTRONIC ASSEMBLY					70 Cel		128MX16	128M	0 Cel		DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	2147483648 bit	2.37 V	SELF CONTAINED REFRESH
MT4C8513TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		524288 words				5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.41 mm	80 ns
MT72KDZQ1G72PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	18.9 mm		8.97 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
SGG64M16U91AO8ZLL-3	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32			.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	12.5 mm	.45 ns
MT4257MN-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	22		512		PLASTIC/EPOXY		NO		CMOS				262144 words			COMMON			4		SIP22,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE								Not Qualified	1048576 bit			e0						120 ns
EDE5108ABSE-5A-E	Micron Technology	DDR1 DRAM	COMMERCIAL	64	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA64,9X15,32		DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B64				267 MHz		Not Qualified	536870912 bit							4,8		.5 ns
MT4C8513DJ-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words				5		8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		5.25 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.44 mm	60 ns
MTA4ATF51264HZ-2G1XX	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY					85 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT8JSF12864HY-80BB1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2800 mA	134217728 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N204				400 MHz		Not Qualified	8589934592 bit						.08 Amp
MT42L256M64D4GVLG-25AT:A	Micron Technology	LPDDR2 DRAM
MT8LSDT864AG-10CXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH		30	235				6 ns
EDJ4216BASE-GN-F	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9.3 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					13.5 mm	.225 ns
MT4LSDT1664WY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1140 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20		DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N144	1			143 MHz		Not Qualified	1073741824 bit			e3			.008 Amp			5.4 ns
MT9VDDT6472ALY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3600 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N184	1			133 MHz		Not Qualified	4831838208 bit			e3			.045 Amp			.75 ns
MT4C4001JDJ-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0					17.17 mm	80 ns
MT49H16M36CHU-33:A	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE				1 mm			16MX36	16M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0					18.5 mm
MT8VDDT3264HY-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			125 MHz		Not Qualified	2147483648 bit			e3						.8 ns
MT18HTF6472DY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
EDJ2104BCSE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	536870912 words	4,8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				667 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.255 ns
MT42L192M64D3EV-3AIT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA253,17X17,20			.5 mm	85 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	1.2 mm	333 MHz	11 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
MT24D88C51240-8	Micron Technology	DRAM CARD	COMMERCIAL	88		512	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		524288 words				5		40	MICROELECTRONIC ASSEMBLY		20			55 Cel	3-STATE	512KX40	512K	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V				Not Qualified	20971520 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT8MTF51264HSZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		2.45 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.