Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT16HTS25664HIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT18VDDF12872G-265B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT42L256M32D2KP-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT18VDDF6472DG-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT8VDDT1664AY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2640 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT9HVF3272PKY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V				Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT42L128M32D1EV-25AT:A	Micron Technology	LPDDR2 DRAM		253	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B253		1.95 V	1.2 mm		11 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11 mm
MT42L128M64D1LE-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT9VDDF3272PHY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel	GOLD	ZIG-ZAG	1	R-PZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4
MT72KGF4G72PZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	42.15 mm		4 mm		309237645312 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						133.35 mm
MT4HTF6464AG-40E	Micron Technology
MT16HTF25672AY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8VDDT12832UY-6D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1640 mA	67108864 words			COMMON	2.5	2.5	32	MICROELECTRONIC ASSEMBLY	DIMM100	DRAMs	1.27 mm	70 Cel	3-STATE	64MX32	64M	0 Cel		DUAL		R-PDMA-N100				167 MHz		Not Qualified	2147483648 bit						.04 Amp			.7 ns
MT18VDDS6472HI-202XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT42L512M32D4EU-18AAT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA253,17X17,20		.5 mm	105 Cel	3-STATE	512MX32	512M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.9 mm	533 MHz	11 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
MT18VDDT12872G-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT4VDDT1664AG-40BA1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.6		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1073741824 bit	2.5 V	AUTO/SELF REFRESH	e0						.7 ns
MT5LSDT1672AG-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				65 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT4LSDT1664WG-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	16777216 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,20	DRAMs	.5 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N144	1			133 MHz		Not Qualified	1073741824 bit						.008 Amp			5.4 ns
MT18JSZF25672PY-80BD1	Micron Technology
MT9HVF12872KY-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2340 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm	200 MHz	18.2 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					82 mm	.45 ns
MT8D168M-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	720 mA	16777216 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30	DRAMs	2.54 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		SINGLE	1	R-XSMA-N30	1	5.5 V	23.114 mm			Not Qualified	134217728 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.008 Amp			60 ns
MT42L96M64D3MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	6.5 mA	100663296 words		YES		1.8		64	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm			96MX64	96M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm	10 ns
MT42L64M64D2LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MTA4ATF51264AZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.6 mm	85 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm		34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT4LC16M4D9DJ-60TR	Micron Technology	EDO DRAM		32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE			1.27 mm		3-STATE	16MX4	16M			DUAL	1	R-PDSO-J32		3.47 V	3.81 mm		10.21 mm	Not Qualified	67108864 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH						20.98 mm	60 ns
MT8VDDT3264AG-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184	1			125 MHz		Not Qualified	2147483648 bit									.8 ns
MT9VDDT3272HY-26A	Micron Technology		COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24	Other Memory ICs	.6 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	2415919104 bit						.036 Amp			.75 ns
MT8LSDT1664LHG-662B2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				9 ns
MT9HVF3272Y-53EC2	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			267 MHz		Not Qualified	2415919104 bit			e3			.045 Amp			.5 ns
MT42L128M64D2EU-25AT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B253		1.95 V	.9 mm		11 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11 mm
MT42L192M32D2KP-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	5 mA	201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT42L128M32D3KJ-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT9VDDT6472IY-202	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3150 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	4831838208 bit						.045 Amp			.8 ns
MT16JTF25664AIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		3.6 V				Not Qualified	17179869184 bit	3 V	SELF CONTAINED REFRESH	e4
MT18VDDT6472AY-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.8 ns
MT42L64M64D2LD-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L64M64D4KH-3AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			64MX64	64M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D2GU-18AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm	533 MHz	10 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
MT9HTF6472AY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.6 ns
MT42L512M32D4LM-3WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	536870912 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			512MX32	512M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT16HTF12864AIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		128MX64	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8LSDT864AG-10B	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
MT42L128M64D3KU-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			128MX64	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.9 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT9JSF25672AZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e4					133.35 mm
MT8D48N-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	880 mA	4194304 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30	DRAMs		70 Cel	3-STATE	4MX8	4M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.2852 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp			60 ns
MT4C8513LDJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ		RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		524288 words				5		8	SMALL OUTLINE			1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	1	R-PDSO-J28		5.25 V	3.68 mm		10.21 mm	Not Qualified	4194304 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION						18.44 mm	60 ns
MT9VDDT3272HIG-335XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		32MX72	32M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.