Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4JTF25664HZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	30.15 mm		3.8 mm		17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT4C1025-15	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T18						Not Qualified	1048576 bit			e0						150 ns
MT36HTF1G72FZ-667C1D6	Micron Technology	DDR DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				1 mm			1GX72	1G			DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		5.1 mm		77309411328 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT42L128M64D3MG-18IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			128MX64	128M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L128M64D2GVMP-25WT:A	Micron Technology	LPDDR2 DRAM
MT4C1M16C6DJ-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	160 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		27.33 mm	70 ns
MT42L256M32D2GVLG-18AT:A	Micron Technology	LPDDR2 DRAM
MT42L192M32D4MP-18IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	6.5 mA	201326592 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX32	192M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT42L64M32D4MG-3IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			64MX32	64M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT4HTF1664HIY-40EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					85 Cel		16MX64	16M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT42L128M32D2KL-3AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT18VDDT6472LAIG-335	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4590 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	85 Cel	3-STATE	64MX72	64M	-40 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	4831838208 bit									.7 ns
MT18VDDT6472AG-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4230 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	TIN LEAD	DUAL		R-PDMA-N184				133 MHz		Not Qualified	4831838208 bit			e0						.75 ns
MT4LC16M1A1TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.41 mm	80 ns
MT4LSDT464HG-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					65 Cel		4MX64	4M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0						6 ns
MT16D232GL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel		SINGLE	1	R-XSMA-N72		5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH							60 ns
SUU512M8V90BG8RG-125TP	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.425 V						8	10.6 mm
MT72JDZQ2G72PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm				154618822656 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT16LSDT1664AI-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					85 Cel		16MX64	16M	-40 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				6 ns
MT49H8M36CHT-5IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		8MX36	8M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	.5 ns
MT4LSDT164GHG-143	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		560 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL		R-PDMA-N144				143 MHz		Not Qualified	67108864 bit						.008 Amp			5.5 ns
MT4HTF1664AY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm			Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.6 ns
MT42L512M32D4GV-25WT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	536870912 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			512MX32	512M			BOTTOM	1	R-PBGA-B134		1.95 V	.85 mm		10 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm	10 ns
MT4C1024RG-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	TSOP2-R	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e3					17.14 mm	80 ns
MT36LSDT12872Y-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		9720 mA	134217728 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	9663676416 bit						.072 Amp			5.4 ns
MT9LD272G-7B	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1170 mA	2097152 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX72	2M	0 Cel		DUAL	1	R-XDMA-N168	1	3.47 V				Not Qualified	150994944 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH				.0045 Amp			70 ns
MT18LD472G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	4194304 words		NO	COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		Other Memory ICs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V	25.654 mm			Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.009 Amp			60 ns
MT16JTF25664AIY-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		256MX64	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L128M16D2TK-25IT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm	85 Cel		128MX16	128M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm		10 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11.5 mm
MT16JSF25664HZ-1G3XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		256MX64	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH
MT4C4260-10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		55 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDIP-T20						Not Qualified	1048576 bit			e0			.0002 Amp			100 ns
MT8VDDT1664HY-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2840 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				166 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT18KBZS1G72PKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N244		1.45 V	17.91 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						82 mm
MT18LSDT6472G-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4860 mA	67108864 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	55 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N168				125 MHz		Not Qualified	4831838208 bit						.036 Amp			6 ns
MTA8ATF1G64HZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				.5 mm	85 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT18HTF12872PDY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.15 mm			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.5 ns
MT24D88C240-8	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words				5		40	MICROELECTRONIC ASSEMBLY		20			55 Cel	3-STATE	2MX40	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V				Not Qualified	83886080 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT9VDDF6472Y-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4050 mA	67108864 words			COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	4831838208 bit						.045 Amp			.7 ns
MT8D88C232H-6S	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		2097152 words		YES		5		32	MICROELECTRONIC ASSEMBLY		16			55 Cel	3-STATE	2MX32	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V				Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH							60 ns
MT42L256M16D1GVLM-25WT:A	Micron Technology	LPDDR2 DRAM
MT42L128M16D1KJ-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX16	128M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT5HTF3272PKY-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1600 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24		DRAMs	.6 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N244				200 MHz		Not Qualified	2415919104 bit									.6 ns
MT16VDDT6464AG-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	4294967296 bit									.75 ns
MT36JBZS51272PY-1G0XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		1GX4	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT16HTF12864HZ-40EE1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2640 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				200 MHz		Not Qualified	8589934592 bit						.112 Amp			.6 ns
MT9KSF12872PZ-1G6XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words				1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	4 mm		30.175 mm	Not Qualified	9663676416 bit	1.283 V	AUTO REFRESH	e4					133.35 mm
MT4C1005Z-12	Micron Technology	NIBBLE MODE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE		60 mA	4194304 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T20						Not Qualified	4194304 bit			e0			.0005 Amp			120 ns
MT18HVS51272PKY-667XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		8	MICROELECTRONIC ASSEMBLY					70 Cel		512MX8	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					82 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.