Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4C4004JDJ-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.17 mm	70 ns
MT2D132M-5X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	360 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.011 Amp			50 ns
MT42L192M64D3LH-18WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			192MX64	192M			BOTTOM	1	S-PBGA-B216		1.95 V	.65 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT42L192M64D3MC-25WT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA	4096	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	7 mA	201326592 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			192MX64	192M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT9JBF51272PKZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N244		1.575 V	17.91 mm		3.8 mm		38654705664 bit	1.425 V	SELF REFRESH; WD-MAX						82 mm
MT42L128M32D4MG-3IT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			128MX32	128M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT18VDDT25672AG-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
MT42L128M32D1GVLG-18WT:A	Micron Technology	LPDDR2 DRAM
MT18VDDT12872PHIG-265	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5040 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	128MX72	128M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit									.75 ns
MT4LC1M16E5DJ-5S	Micron Technology	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	180 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-J42		3.6 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		27.33 mm	50 ns
MT36HTF25672P-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		30	235				45 ns
MT8LSDT864LHG-662XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0						7.5 ns
MT49H64M9BM-18:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1335 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	95 Cel	3-STATE	64MX9	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1			.055 Amp		18.5 mm	15 ns
MT4C1004JD30AWC1-8	Micron Technology	FAST PAGE DRAM		31	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		4194304 words				5		1	UNCASED CHIP						3-STATE	4MX1	4M			UPPER	1	R-XUUC-N31						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT9VDDF1672G-26A	Micron Technology		COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2925 mA	16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		Other Memory ICs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N184	1			133 MHz		Not Qualified	1207959552 bit						.027 Amp			.75 ns
MT18LSDT3272AG-133B1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	2415919104 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT42L256M32D1KJ-25IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			256MX32	256M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M32D3KP-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT2LDT132HG-7XL	Micron Technology	EDO DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	310 mA	1048576 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm			Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0003 Amp			70 ns
MT16D832BG-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	976 mA	8388608 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	34.544 mm			Not Qualified	268435456 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.016 Amp			60 ns
MT9LSDT3272Y-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2430 mA	33554432 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	55 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2415919104 bit						.018 Amp			5.4 ns
MT4C4003JDJ-7TR	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		5.5 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.17 mm	70 ns
MT4LDT832HG-5	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	352 mA	8388608 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX32	8M	0 Cel		DUAL	1	R-XDMA-N72	1	3.6 V	2.54 mm		25.4 mm	Not Qualified	268435456 bit	3 V	CAS BEFORE RAS REFRESH				.002 Amp		59.69 mm	50 ns
MT8LSDT6464AY-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					65 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4						6 ns
MT18JSF2G72PZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		154618822656 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MT10D25636M-85	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		700 mA	262144 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	256KX36	256K	0 Cel		SINGLE		R-PSMA-N72			25.527 mm			Not Qualified	9437184 bit						.01 Amp			85 ns
MT42L128M32D1GVEV-25WT:A	Micron Technology	LPDDR2 DRAM
EDJ2108BCSE-DJ-F	Micron Technology	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	268435456 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				667 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.255 ns
MT4HTF6464HY-40EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		64MX64	64M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm	.6 ns
MT5VDDT3272HIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		32MX72	32M	-40 Cel		ZIG-ZAG	1	R-XZMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.7 ns
SUU256M16V00HG8TW-125DG	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32			.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V		800 MHz			4294967296 bit	1.425 V						8
MT4C1024LC10	Micron Technology	FAST PAGE DRAM	COMMERCIAL	18	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS	THROUGH-HOLE		60 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T18						Not Qualified	1048576 bit			e0			.0002 Amp			100 ns
MT42L96M64D4KL-25IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			96MX64	96M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT10D25640GL-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	900 mA	262144 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	256KX40	256K	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	25.654 mm			Not Qualified	10485760 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
M18HVF25672PDY-53EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8LSDT264AG-663XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	134217728 bit	3 V								9 ns
MT9HTF6472RHIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm		30 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT16LD464G-7X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1760 mA	4194304 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp			70 ns
MT49H64M9FM-25:A	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	970 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	95 Cel	3-STATE	64MX9	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e0			.048 Amp		18.5 mm	20 ns
MT42L128M16D3MG-3AT:A	Micron Technology	LPDDR2 DRAM		134	TFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.65 mm			128MX16	128M			BOTTOM	1	S-PBGA-B134		1.95 V	1.2 mm		11.5 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L256M64D4LK-25WT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			256MX64	256M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT4C4001JZ-6S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		1048576 words		YES		5		4	IN-LINE				1.27 mm	70 Cel		1MX4	1M	0 Cel		ZIG-ZAG	1	R-PZIP-T20		5.5 V	10.41 mm		2.795 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH						25.295 mm	60 ns
MT4LD164G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	680 mA	1048576 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	32.004 mm			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			60 ns
MT9HTF3272PKY-667C2	Micron Technology		COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2250 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24		Other Memory ICs	.6 mm	55 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N244	1			333 MHz		Not Qualified	2415919104 bit			e3			.045 Amp			.45 ns
MT42L384M32D3MC-3WT:A	Micron Technology	LPDDR2 DRAM		240	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			384MX32	384M			BOTTOM	1	S-PBGA-B240		1.95 V	.8 mm		14 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4VDDT3264HIY-335F2	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1620 mA	33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	85 Cel	3-STATE	32MX64	32M	-40 Cel		DUAL		R-PDMA-N200				167 MHz		Not Qualified	2147483648 bit									.7 ns
MT42L256M32D2GVLL-18WT:A	Micron Technology	LPDDR2 DRAM
MT4C2M8A2DL-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					20.98 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.