Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4C10016Z-5	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			16777216 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1		DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0						50 ns
MT16LD464AG-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1920 mA	4194304 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX64	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	8.89 mm		25.4 mm	Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.008 Amp		133.35 mm	60 ns
MT42L128M32D4KL-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			128MX32	128M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
EDJ1116EJBG-DJ-F	Micron Technology	DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					13.5 mm
MT8JTF25664AY-1G1B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3440 mA	268435456 words			COMMON		1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N240				533 MHz		Not Qualified	17179869184 bit						.08 Amp			.3 ns
MT18VDDT3272DY-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
SUM1G8Z01AD8WE-093TP	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	4,8		COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78			1.2 mm	1067 MHz	8 mm		8589934592 bit							4,8	12 mm
MT8LSDT864HG-10EB4	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words				3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		8MX64	8M	0 Cel		DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V								6 ns
MT16JTF25664AZ-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	17179869184 bit	1.425 V	SELF CONTAINED REFRESH
MT18VDDT3272Y-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		32MX72	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
EBJ21EE8BAWA-AG-E	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4
MT42L64M64D2MH-3IT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			64MX64	64M			BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		11 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT4C1M16C3DJ-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0					27.33 mm	60 ns
MT18VDDF3272G-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		5850 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N184	1			166 MHz		Not Qualified	2415919104 bit						.054 Amp			.75 ns
MT4HTF6464HIZ-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					85 Cel		64MX64	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30 mm			Not Qualified	4294967296 bit	1.7 V	SELF CONTAINED REFRESH	e4					67.6 mm
MT5LSDT472AG-13EC6	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		4194304 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	301989888 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT42L256M32D2LK-3AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	333 MHz	12 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MTA18ADF2G72PDZ-2G3XX	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT8LSFT3232RH-133	Micron Technology
EDJ8216E5MB-GN-F	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		512MX16	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1					13.5 mm	.225 ns
MT4C10017Z-7	Micron Technology	STATIC COLUMN DRAM	COMMERCIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			16777216 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1		SRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0						70 ns
MT9LSDT1672G-13EE2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT4C10016Z-5IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	24	ZIP	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	THROUGH-HOLE			16777216 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP24,.1		DRAMs	1.27 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG		R-PZIP-T24						Not Qualified	16777216 bit			e0						50 ns
MT18JBF25672PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		256MX8	256M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT42L96M64D3KL-25AT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			96MX64	96M			BOTTOM	1	S-PBGA-B168		1.95 V	.8 mm		12 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm	10 ns
MT36VDDT25672G-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			268435456 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	19327352832 bit						.18 Amp			.7 ns
MT18LSDT6472AIY-133XX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
SGG1024M4V91AG8RHF-187E	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	534.7 MHz	9 mm		4294967296 bit	1.425 V						8	10.5 mm
MT45V512K32RG-6	Micron Technology	SYNCHRONOUS GRAPHICS RAM		100	LQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		524288 words		YES		2.5		32	FLATPACK, LOW PROFILE				.65 mm			512KX32	512K			QUAD	1	R-PQFP-G100		2.7 V	1.6 mm		14 mm	Not Qualified	16777216 bit	2.3 V	AUTO/SELF REFRESH						20 mm
MT18KSF1G72PKZ-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N244		1.45 V	30.15 mm		3.8 mm		77309411328 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						82 mm
MT16D88C232-6	Micron Technology	DRAM CARD	COMMERCIAL	88		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS	896 mA	2097152 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	CARD88	16	DRAMs		55 Cel	3-STATE	2MX32	2M	0 Cel		UNSPECIFIED	1	X-XXMA-X88	1	5.25 V	85.8012 mm			Not Qualified	67108864 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0032 Amp			60 ns
MT42L256M32D4LD-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT8VDDT3264AG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	2147483648 bit									.7 ns
MT5VDDT1672HG-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH		30	235				.8 ns
MT4LC1M16E5TG-5STR	Micron Technology	EDO DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0					20.95 mm	50 ns
MT18HTF6472Y-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT49H64M9HT-33IT	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		64MX9	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1					18.5 mm
MT18JBF25672PY-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		4	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		512MX4	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
EDW4032BABG-60-F	Micron Technology	DDR5 DRAM		170	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.35		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX32	128M			BOTTOM	1	R-PBGA-B170		1.3905 V	1.2 mm		12 mm		4294967296 bit	1.3095 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDJ8232B5MB-GN-F	Micron Technology	DDR3 DRAM	OTHER	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX32	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136		1.575 V	1.2 mm		10.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm	.225 ns
MT3D2569M-12	Micron Technology	PAGE MODE DRAM	COMMERCIAL	30	SIMM	512	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		150 mA	262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel		SINGLE		R-PSMA-N30			12.1412 mm			Not Qualified	2359296 bit						.003 Amp			120 ns
MT4LC2M8E7DW-7LTR	Micron Technology	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.44 mm	70 ns
MT18JSF51272AIY-1G5XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4
MT5LSDT1672AY-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					65 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	e4						6 ns
MT8LDT264G-6X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1040 mA	2097152 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.004 Amp			60 ns
MT18JSF25672PY-1G6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8LSDT3264AY-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2160 mA	33554432 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	2147483648 bit						.016 Amp			5.4 ns
MT12D436DG-6S	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1400 mA	4194304 words		YES	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	4MX36	4M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	25.654 mm			Not Qualified	150994944 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.013 Amp			60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.