Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
EDE1104AFSE-6E-F	Micron Technology	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		280 mA	268435456 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32		DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B60				333 MHz		Not Qualified	1073741824 bit							4,8		.45 ns
MT8VDDF6464AY-40BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		3.6 V	25.53 mm				4294967296 bit	2.3 V	AUTO/SELF REFRESH	e4					133.35 mm
MT20D51236M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	820 mA	524288 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	512KX36	512K	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	25.654 mm			Not Qualified	18874368 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.02 Amp			70 ns
MT42L256M16D1LM-25AIT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	194 mA	268435456 words	4,8,16	YES	COMMON	1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	85 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	400 MHz	12 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT9VDDT12872HIY-40BXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
MT5VDDT1672LAY-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		16MX72	16M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4LC2M8E7DW-6	Micron Technology	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS	100 mA	2097152 words		NO	COMMON	3.3	3.3	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.6 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		18.44 mm	60 ns
MT16KTF1G64HZ-1G1XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY					70 Cel		1GX64	1G	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm				68719476736 bit	1.283 V	AUTO/SELF REFRESH	e4					67.6 mm
MT4C1M16C3TG-5S	Micron Technology	FAST PAGE DRAM	COMMERCIAL	44	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	190 mA	1048576 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G44		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	e0			.00015 Amp		20.96 mm	50 ns
MT18VDDT6472LAIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT42C8257DJ-7	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	210 mA	262144 words				5	5	8	SMALL OUTLINE	SOJ40,.44		Other Memory ICs	1.27 mm	70 Cel		256KX8	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-J40		5.5 V	3.81 mm		10.21 mm	Not Qualified	2097152 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.01 Amp		26.06 mm	70 ns
MT4C1004JZ-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	90 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	9.35 mm		2.795 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		25.295 mm	80 ns
MT18VDDF6472HY-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4590 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	65 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			167 MHz		Not Qualified	4831838208 bit			e3						.7 ns
MT72KSZS2G72PZ-1G4F1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY					70 Cel		2GX72	2G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V				Not Qualified	154618822656 bit	1.283 V	AUTO/SELF REFRESH	e4
MTA18ASF2G72HZ-3G2XX	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY					95 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N260		1.26 V	30.13 mm		3.7 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MT18VDDT12872PHIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT4LSDT232UDY-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2097152 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY					70 Cel		2MX32	2M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e4						7.5 ns
MT42L256M64D4LK-3AIT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	333 MHz	12 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT4LSDT864HY-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					65 Cel		8MX64	8M	0 Cel	GOLD	DUAL	1	R-XDMA-N144		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e4						6 ns
MT9HVF6472PIY-53EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT8LSDT1632UG-8	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1680 mA	16777216 words			COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM100		DRAMs	1.27 mm	70 Cel	3-STATE	16MX32	16M	0 Cel		DUAL		R-PDMA-N100	1			125 MHz		Not Qualified	536870912 bit						.016 Amp			6 ns
MT18HTF12872PY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5040 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	55 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4			.09 Amp			.45 ns
MT18VDDF6472Y-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT16LSDF3264HG-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					65 Cel		32MX64	32M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V	3.8 mm		31.75 mm	Not Qualified	2147483648 bit	3 V	AUTO/SELF REFRESH	e0					67.585 mm	5.4 ns
MT5LSDT872AG-133B1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT16LSDF6464HY-133G1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				.8 mm	65 Cel		64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		4294967296 bit	3 V	AUTO/SELF REFRESH; WD-MAX		30	260			67.585 mm	5.4 ns
MT36JBZS51272PDIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY				1 mm	85 Cel		512MX8	512M	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	4294967296 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT18VDVF12872G-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6300 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	55 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	9663676416 bit						.072 Amp			.8 ns
MT8JSF12864HIY-1G3XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT4LSDT1664AG-133B2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH		30	235				5.4 ns
MT9VDDT12872HY-262XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT8JTF12864HIY-80CXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					85 Cel		128MX64	128M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N204		1.575 V				Not Qualified	8589934592 bit	1.425 V	SELF CONTAINED REFRESH	e4
MT42L128M32D1LK-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX32	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT4C1026VG-10IT	Micron Technology	STATIC COLUMN DRAM	INDUSTRIAL	20	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		60 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP20(UNSPEC)		SRAMs		85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G20						Not Qualified	1048576 bit			e0			.001 Amp			100 ns
MT8D18N-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	560 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	21.463 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.008 Amp			80 ns
MT16VDDF6464HY-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3760 mA	67108864 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	4294967296 bit						.064 Amp			.75 ns
MT42L64M32D2MH-3IT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			64MX32	64M			BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		11 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT18JDF25672PDZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18.9 mm		18.75 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH						133.35 mm
MT16HTF6464AY-53EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1960 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N240				266 MHz		Not Qualified	4294967296 bit						.08 Amp			.5 ns
MT18VDVF12872DG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3690 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	9663676416 bit									.7 ns
MT4C4001JD22ADC2-8	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				5		4	UNCASED CHIP						3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH							80 ns
MT8LDT264G-7S	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	960 mA	2097152 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	2MX64	2M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm			Not Qualified	134217728 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.0012 Amp			70 ns
MT42L96M64D4LD-3AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	4.7 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			96MX64	96M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MT2VDDT832UY-6XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		2.5		32	MICROELECTRONIC ASSEMBLY					70 Cel		8MX32	8M	0 Cel	GOLD	DUAL	1	R-XDMA-N100		2.7 V				Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e4						.7 ns
MT42L64M64D3MP-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			64MX64	64M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4LC16M1A1RG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		16777216 words				3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.41 mm	70 ns
MT10D140G-7IB	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1000 mA	1048576 words			COMMON	5	5	40	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX40	1M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V				Not Qualified	41943040 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.01 Amp			70 ns
MT16HTF12864AZ-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.5 mm				8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.