Micron Technology DRAM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4VDDT864HG-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			8388608 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	536870912 bit									.75 ns
MT4LC16257TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				3.3		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					18.41 mm	80 ns
MT18JSF1G72AZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		4 mm		77309411328 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
EDBM432B3PF-1D-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			384MX32	384M			BOTTOM	1	S-PBGA-B168		1.3 V	.92 mm		12 mm		12884901888 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						12 mm
MT42L192M64D3LK-3AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	.8 mm	333 MHz	12 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MT42L512M32D4LM-3AAT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA216,29X29,16			.4 mm	105 Cel	3-STATE	512MX32	512M	-40 Cel		BOTTOM	1	S-PBGA-B216		1.3 V	1 mm	333 MHz	12 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	12 mm
MTA18ASF2G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4140 mA	2147483648 words	8	YES	COMMON	1.2		72	MICROELECTRONIC ASSEMBLY	DIMM288,33				95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1600 MHz	3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.396 Amp	8	133.35 mm
MT18JSZF51272PZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	SELF CONTAINED REFRESH	e4					133.35 mm
MT9VDDT3272HIG-202	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N200				125 MHz		Not Qualified	2415919104 bit						.036 Amp			.8 ns
MT4LC4001JDJ-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J20		3.6 V	3.61 mm		7.67 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0					17.17 mm	80 ns
EDJ1108DBSE-8C-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	134217728 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.17 mm	400 MHz	8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH				.05 Amp	8	11.5 mm	20 ns
MT9HTF6472G-40E	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		DRAMs	1 mm	55 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	4831838208 bit									.6 ns
MT61M256M32JE-12N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.25		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.75 mm	95 Cel		256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm		8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
MT16HTF51264HZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY					70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	30.15 mm			Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT42L256M32D4MP-3AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			256MX32	256M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT8LSDT6464AY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1960 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	65 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N168				143 MHz		Not Qualified	4294967296 bit						.028 Amp			5.4 ns
MT42L128M16D4KH-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			128MX16	128M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT36HVS51272PIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT42L128M64D2GVLF-18WT:A	Micron Technology	LPDDR2 DRAM
MT9VDDT1672AY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N184	1			142 MHz		Not Qualified	1207959552 bit			e3						.75 ns
MT2LDT132HG-6S	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	340 mA	1048576 words		YES	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL	1	R-XDMA-N72	1	3.6 V	25.654 mm			Not Qualified	33554432 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH				.0003 Amp			60 ns
MT42L128M64D2LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT16LSDT6464AGI-133	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4320 mA	67108864 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	85 Cel	3-STATE	64MX64	64M	-40 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	4294967296 bit						.032 Amp			5.4 ns
MT9KSF25672AZ-1G4XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		2.7 mm		19327352832 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT4C16261TG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	150 mA	262144 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		18.41 mm	80 ns
MT4C4M4E9TG-6S	Micron Technology	EDO DRAM	COMMERCIAL	24	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	GULL WING	ASYNCHRONOUS	110 mA	4194304 words		YES	COMMON	5	5	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G24		5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	e0			.00015 Amp		17.14 mm	60 ns
MT9VDDT1672HIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		16MX72	16M	-40 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	1207959552 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT18VDDT6472DIY-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT9LSDT872AG-133C7	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		8388608 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		8MX72	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	603979776 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT18VDVF12872Y-202XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					55 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.8 ns
MT2D18NL-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	30		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	220 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-T30		5.5 V	13.843 mm			Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0004 Amp			80 ns
MT18LSDT12872AY-13EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					65 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	9663676416 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT4C1024Z-8IT	Micron Technology	FAST PAGE DRAM	INDUSTRIAL	20	ZIP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	70 mA	1048576 words			SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	TIN LEAD	ZIG-ZAG	1	R-PZIP-T20		5.5 V	9.35 mm		2.795 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		25.295 mm	80 ns
MT42L64M64D4MH-25IT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm			64MX64	64M			BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		11 mm		4294967296 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT4LC2M8A1TL-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words		YES		3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.3 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					20.96 mm	60 ns
MT24D836G-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	1434 mA	8388608 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72	18	DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel	TIN LEAD	SINGLE	1	R-XSMA-N72		5.5 V	30.48 mm			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.036 Amp			60 ns
MT49H16M18CFM-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32		DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT42L128M16D4LD-18AT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm			128MX16	128M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT42L128M64D2GVLG-3AT:A	Micron Technology	LPDDR2 DRAM
MT4C16259DJ-8LTR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J40		5.5 V	3.81 mm		10.21 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH	e0					26.06 mm	80 ns
MT18JSF51272AKIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		512MX72	512M	-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	30.15 mm		3.8 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						82 mm
MT8LSDT1664LHG-13EB1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144			RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY					70 Cel		16MX64	16M	0 Cel	TIN LEAD	ZIG-ZAG	1	R-XZMA-N144		3.6 V				Not Qualified	1073741824 bit	3 V	AUTO/SELF REFRESH	e0						5.4 ns
MT18HVS25672RHIY-40EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		256MX72	256M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4
MT4C16256TG-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.41 mm	70 ns
MT4C1M16C7DJ-7TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					27.33 mm	70 ns
EBJ21UE8BFU0-DJ-F	Micron Technology	DDR DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3000 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24		DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	0 Cel		DUAL		R-PDMA-N204				667 MHz		Not Qualified	17179869184 bit						.224 Amp			.255 ns
MT4C1M16C6DJ-6STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		1048576 words		YES		5		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		5.5 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					27.33 mm	60 ns
MT18DT8144G-6	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	200			RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS		8388608 words				3.3		144	MICROELECTRONIC ASSEMBLY					70 Cel		8MX144	8M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		3.6 V				Not Qualified	1207959552 bit	3 V	CAS BEFORE RAS REFRESH	e0						60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.