Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT4LSDT864HY-10E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1080 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	65 Cel	3-STATE	8MX64	8M	0 Cel	MATTE TIN	DUAL		R-PDMA-N144	1		25.527 mm	125 MHz		Not Qualified	536870912 bit			e3			.008 Amp			6 ns
MT18JBZF25672PDY-1G5XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		8	MICROELECTRONIC ASSEMBLY				1 mm	70 Cel		256MX8	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	18 mm		4 mm	Not Qualified	2147483648 bit	1.425 V	SELF CONTAINED REFRESH; WD-MAX						133.35 mm
MT36HTJ51272Y-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4						.45 ns
MT4VR3216AG-745	Micron Technology	RAMBUS DRAM MODULE		184	DIMM		RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON		1.8/2.5,2.5	16	MICROELECTRONIC ASSEMBLY	DIMM184,40		DRAMs	1 mm		3-STATE	32MX16	32M			DUAL		R-PDMA-N184	1			356 MHz		Not Qualified	536870912 bit									45 ns
MT4LC2M8B2TG-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G28		3.3 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					18.41 mm	80 ns
MT8VDDT3264HY-335XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		32MX64	32M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2147483648 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT4LC4001JD22ADC2	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		4	UNCASED CHIP						3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT72JSZS1G72PIZ-1G6XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH
MT36VDDF25672DY-335F1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3780 mA	268435456 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N184				166 MHz		Not Qualified	19327352832 bit						.18 Amp
MT18VDDT12872Y-265	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6300 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	9663676416 bit						.09 Amp			.75 ns
MT4LC2M8A2DL-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS	70 mA	2097152 words		NO	COMMON	3	5	8	SMALL OUTLINE	SOJ32,.44		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.3 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0004 Amp		20.98 mm	70 ns
MT8LSDT864AY-13E	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1840 mA	8388608 words			COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N168			35.052 mm	143 MHz		Not Qualified	536870912 bit						.016 Amp			5.4 ns
MT9HTF3272Y-667B2	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2250 mA	33554432 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40		Other Memory ICs	1 mm	70 Cel	3-STATE	32MX72	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	2415919104 bit			e3			.045 Amp			.45 ns
MT9VDDT3272HIG-262	Micron Technology		INDUSTRIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		Other Memory ICs	.6 mm	85 Cel	3-STATE	32MX72	32M	-40 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	2415919104 bit						.036 Amp			.75 ns
MT18HTF25672FDY-667XX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4
MT4C4M4E8DJ-7	Micron Technology	EDO DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel		DUAL	1	R-PDSO-J24		5.5 V	3.61 mm		7.67 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						17.17 mm	70 ns
MT9HTF6472AY-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm	.45 ns
MT18VDDT12872PHY-265A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3195 mA	134217728 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX72	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	9663676416 bit									.75 ns
MT8JSF25664HIZ-1G5XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY				.6 mm	85 Cel		256MX64	256M	-40 Cel		ZIG-ZAG	1	R-XZMA-N204		1.575 V	30.15 mm		3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT18VDDT6472G-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		6300 mA	67108864 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX72	64M	0 Cel		DUAL		R-PDMA-N184				133 MHz		Not Qualified	4831838208 bit						.072 Amp			.75 ns
MT36LSDT25672G-133	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		13320 mA	268435456 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N168				133 MHz		Not Qualified	19327352832 bit						.072 Amp			5.4 ns
MT16HTF12864HY-667	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3360 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	65 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			333 MHz		Not Qualified	8589934592 bit			e3			.08 Amp			.45 ns
MT16VDDT6464AY-40BK1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2560 mA	67108864 words			COMMON	2.6	2.6	64	MICROELECTRONIC ASSEMBLY	DIMM184		DRAMs	1.27 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N184				200 MHz		Not Qualified	4294967296 bit						.064 Amp			.7 ns
MT42L384M32D3LM-18AT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		402653184 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm			384MX32	384M			BOTTOM	1	S-PBGA-B216		1.95 V	1 mm		12 mm		12884901888 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
PRN2G8Z22AD8VA-075E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words	4,8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel		2GX8	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333 MHz	10 mm		17179869184 bit	1.14 V						4,8	11 mm
EDY4016AABG-DR-F-R	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1					13.5 mm
MT4LDT164AG-7X	Micron Technology	EDO DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	620 mA	1048576 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	32	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.654 mm			Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.002 Amp			70 ns
MT5LDT472AG-5	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	4096	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	875 mA	4194304 words			COMMON	3.3	3.3	72	MICROELECTRONIC ASSEMBLY	DIMM168		DRAMs	1.27 mm	70 Cel	3-STATE	4MX72	4M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V				Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.0025 Amp			50 ns
MT36LSDT6472G-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4831838208 bit	3 V	AUTO/SELF REFRESH							6 ns
MT18HTF12872AY-40EXX	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4						.6 ns
MT9HTF12872AIY-667XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	2.7 mm		30.175 mm	Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT4LC2M8F4DJ-70TR	Micron Technology	EDO DRAM	COMMERCIAL	28	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel		DUAL	1	R-PDSO-J28		3.47 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	3.13 V	RAS ONLY/CAS BEFORE RAS REFRESH						18.44 mm	70 ns
MT4LC4001JTG-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	80 mA	1048576 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.0005 Amp		17.14 mm	60 ns
MT4C1004JTG-8	Micron Technology	FAST PAGE DRAM	COMMERCIAL	20	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	90 mA	4194304 words		NO	SEPARATE	5	5	1	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G20		5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.001 Amp		17.14 mm	80 ns
EDJ1108DBSE-AE-F	Micron Technology	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	270 mA	134217728 words	8	YES	COMMON	1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32			.8 mm	95 Cel	3-STATE	128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.17 mm	533 MHz	8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH				.06 Amp	8	11.5 mm	20 ns
MT4LC4001JD22ADC1	Micron Technology	FAST PAGE DRAM		30	DIE		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	NO LEAD	ASYNCHRONOUS		1048576 words				3.3		4	UNCASED CHIP						3-STATE	1MX4	1M			UPPER	1	R-XUUC-N30						Not Qualified	4194304 bit		RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
MT18VDDT12872AIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY					85 Cel		128MX72	128M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT9HTF6472RHIZ-80EXX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY					85 Cel		64MX72	64M	-40 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm			Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH	e4					67.6 mm
MT16JSS51264HY-1G3XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY					70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N204		1.575 V	3.8 mm		30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4					67.6 mm
MT9VDDT1672HG-265F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2925 mA	16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	16MX72	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1207959552 bit									.75 ns
MT4C2M8A2TL-7	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS	100 mA	2097152 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.001 Amp		20.96 mm	70 ns
MT6VR4818AG-850XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS	NO LEAD	SYNCHRONOUS		50331648 words		YES		2.5		18	MICROELECTRONIC ASSEMBLY					70 Cel		48MX18	48M	0 Cel		DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	905969664 bit	2.37 V	SELF CONTAINED REFRESH
MT2D132M-7	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS	NO LEAD	ASYNCHRONOUS	310 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		SINGLE	1	R-XSMA-N72	1	5.5 V	20.574 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH				.011 Amp			70 ns
MT2LD132HG-6L	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	72	DIMM	1024	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		340 mA	1048576 words		NO	COMMON	3.3	3.3	32	MICROELECTRONIC ASSEMBLY	DIMM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel		DUAL		R-PDMA-N72			25.654 mm			Not Qualified	33554432 bit						.0003 Amp			60 ns
MT4LC2M8A2DJ-8STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	J BEND	ASYNCHRONOUS		2097152 words		YES		3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J28		3.3 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					18.44 mm	80 ns
MT16VDDS12864HY-262	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			134217728 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24		DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	8589934592 bit									.75 ns
MT4LC2M8A1TL-8TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS	GULL WING	ASYNCHRONOUS		2097152 words				3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G32		3.3 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					20.96 mm	80 ns
MT12D88C436-6	Micron Technology	DRAM CARD	COMMERCIAL	88		2048	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS	UNSPECIFIED	ASYNCHRONOUS		4194304 words				5		36	MICROELECTRONIC ASSEMBLY		18			55 Cel		4MX36	4M	0 Cel		UNSPECIFIED	1	X-XXMA-X88		5.25 V				Not Qualified	150994944 bit	4.75 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP REFRESH							60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.