Micron Technology DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT16LD164M-8	Micron Technology	FAST PAGE DRAM MODULE	COMMERCIAL	168	DIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	960 mA	1048576 words		NO	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM168	DRAMs	1.27 mm	70 Cel	3-STATE	1MX64	1M	0 Cel		DUAL	1	R-XDMA-N168	1	3.6 V	25.4 mm			Not Qualified	67108864 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH				.008 Amp			80 ns
MT18HTF12872PDY-80EXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	30.15 mm			Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT43C4257ADJ-8	Micron Technology	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	150 mA	262144 words				5	5	4	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-J40		5.25 V	3.81 mm		10.21 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0			.002 Amp		26.06 mm	80 ns
MT42L256M32D2GV-18AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.85 mm	533 MHz	10 mm		8589934592 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
MT42L128M64D2GVMC-3WT:A	Micron Technology	LPDDR2 DRAM
MT42L64M32D4KP-18IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX32	64M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT18VDDT25672LAIG-262XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	19327352832 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT9JSF25672AKIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel		DUAL	1	R-XDMA-N244		1.575 V	30.15 mm		3.8 mm		19327352832 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						82 mm
MT8VDDT1664HG-26A	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		2600 mA	16777216 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	16MX64	16M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	1073741824 bit						.024 Amp			.75 ns
MT5VDDT1672LAY-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			16777216 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	16MX72	16M	0 Cel	MATTE TIN	DUAL		R-PDMA-N184	1			125 MHz		Not Qualified	1207959552 bit			e3			.02 Amp			.8 ns
MT18HVF12872PD-800XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		30	235
MT18KSF25672PZ-1G4XX	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm	667 MHz	4 mm	Not Qualified	19327352832 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX					8	133.35 mm
MT36HVZS1G72PZ-667XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	18.05 mm		4 mm		38654705664 bit	1.7 V	SELF REFRESH; WD-MAX						133.35 mm
EDBA232B1MA-8D-F	Micron Technology	DDR2 DRAM		134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm			512MX32	512M			BOTTOM	1	R-PBGA-B134		1.95 V	1.2 mm		11.5 mm		17179869184 bit	1.7 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.2V NOM		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT43C4257ATG-7TR	Micron Technology	VIDEO DRAM	COMMERCIAL	40	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	TIN LEAD	DUAL	3	R-PDSO-G40		5.25 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 2 X 512 X 4 SAM	e0					18.41 mm	70 ns
MT36JSZF51272PIY-1G1I	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	e4
MT4C2M8B1DL-7STR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words		YES		5		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		5.5 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; BATTERY BACKUP; SELF REFRESH	e0					20.98 mm	70 ns
MT9LSDT1672AG-10EXX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		72	MICROELECTRONIC ASSEMBLY				65 Cel		16MX72	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	1207959552 bit	3 V	AUTO/SELF REFRESH	e0						6 ns
MT9VDDT6472HIG-265XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		64MX72	64M	-40 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT42L128M64D2LD-18IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			128MX64	128M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4VDDT864HG-265F2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1500 mA	8388608 words			COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	8MX64	8M	0 Cel		DUAL		R-PDMA-N200				133 MHz		Not Qualified	536870912 bit									.75 ns
MT9VDDT3272HG-26AXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		32MX72	32M	0 Cel		DUAL	1	R-XDMA-N200		2.7 V				Not Qualified	2415919104 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT42L64M32D1MH-3AT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			64MX32	64M			BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		11 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						11.5 mm
MT42L64M32D2LE-3IT:A	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX32	64M			BOTTOM	1	S-PBGA-B168		1.95 V	1 mm		12 mm		2147483648 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT18VDDT3272AG-335	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	4096	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		3222 mA	33554432 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	32MX72	32M	0 Cel		DUAL		R-PDMA-N184				167 MHz		Not Qualified	2415919104 bit						.027 Amp			.7 ns
MT72JSZS2G72PIZ-1G4XX	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	-40 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH
MT42L192M64D3TK-18AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		201326592 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	192MX64	192M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm	533 MHz	10 mm		12884901888 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
MT42L512M32D4TK-18AAT:A	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	4,8,16	YES	COMMON	1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25		.65 mm	105 Cel	3-STATE	512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.7 mm	533 MHz	10 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11.5 mm
MT4LC2M8B2DL-6TR	Micron Technology	FAST PAGE DRAM	COMMERCIAL	32	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words				3		8	SMALL OUTLINE			1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J32		3.3 V	3.68 mm		10.21 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0					20.98 mm	60 ns
MT4259MN-15	Micron Technology	PAGE MODE DRAM	COMMERCIAL	22		256		PLASTIC/EPOXY		NO		MOS				180 mA	262144 words			SEPARATE	5	5	4		SIP22,.2	DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	Tin/Lead (Sn/Pb)	SINGLE								Not Qualified	1048576 bit			e0						150 ns
MT42L256M64D4MP-18AIT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8,16	YES	COMMON	1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20		.5 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel		BOTTOM	1	S-PBGA-B220		1.3 V	.8 mm	533 MHz	14 mm		17179869184 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	14 mm
MT36JSZF51272PZ-80CXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH						133.5 mm
MT72JSZS1G72PZ-80BXX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.575 V				Not Qualified	77309411328 bit	1.425 V	AUTO/SELF REFRESH
MT42L128M16D1LL-25AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216		8192		PLASTIC/EPOXY		YES		CMOS	AEC-Q100			194 mA	134217728 words	4,8,16		COMMON		1.2,1.8	16		BGA216,29X29,16	DRAMs		105 Cel	3-STATE	128MX16	128M	-40 Cel								400 MHz		Not Qualified	2147483648 bit						.000025 Amp	4,8,16		5.5 ns
MT4VR3216AG-840XX	Micron Technology	RAMBUS DRAM MODULE	COMMERCIAL	184			RECTANGULAR	UNSPECIFIED	BLOCK ORIENTED PROTOCOL	NO	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words		YES		2.5		16	MICROELECTRONIC ASSEMBLY				70 Cel		32MX16	32M	0 Cel		DUAL	1	R-XDMA-N184		2.63 V				Not Qualified	536870912 bit	2.37 V	SELF CONTAINED REFRESH
MT42L96M64D1LD-25IT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA	2048	SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	5 mA	100663296 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			96MX64	96M			BOTTOM	1	S-PBGA-B220		1.95 V	1 mm		14 mm		6442450944 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm	10 ns
MTA18ASF2G72XF1Z-3G2XXXXX	Micron Technology
MT4LSDT1632UG-10XX	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	100	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		3.3		32	MICROELECTRONIC ASSEMBLY				70 Cel		16MX32	16M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N100		3.6 V				Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e0						7.5 ns
MT18VDDF12872Y-265B1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	9663676416 bit	2.3 V	AUTO/SELF REFRESH	e4						.75 ns
MT42L256M32D4KH-3IT:A	Micron Technology	LPDDR2 DRAM		216	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm			256MX32	256M			BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		8589934592 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						12 mm
MT42L256M16D1LD-3AIT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	178 mA	268435456 words	4,8,16	YES	COMMON	1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA220,27X27,20		.5 mm	85 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	S-PBGA-B220		1.3 V	1 mm	333 MHz	14 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	14 mm
MT42C256K16A1SG-8	Micron Technology	VIDEO DRAM	COMMERCIAL	64	SSOP	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	195 mA	262144 words				5	5	16	SMALL OUTLINE, SHRINK PITCH	SOP64,.54,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	2	R-PDSO-G64		5.5 V	2.38 mm		12 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.01 Amp		26.29 mm	80 ns
MT42L256M16D1EU-3AIT:A	Micron Technology	LPDDR2 DRAM		253	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	178 mA	268435456 words	4,8,16	YES	COMMON	1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA253,17X17,20		.5 mm	85 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	S-PBGA-B253		1.3 V	.9 mm	333 MHz	11 mm		4294967296 bit	1.14 V	SELF REFRESH; ALSO REQURIES 1.8V NOMINAL SUPPLY					4,8,16	11 mm
MT42L256M64D4MP-3WT:A	Micron Technology	LPDDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220		1.95 V	.8 mm		14 mm		17179869184 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.2V NOM						14 mm
MT4LC1M16C6DJ-6	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	130 mA	1048576 words		NO	COMMON	3	3/3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		3.3 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	2.7 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	e0			.0004 Amp		27.33 mm	60 ns
MT4LC1M16C3DJ-6L	Micron Technology	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	170 mA	1048576 words		NO	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44	DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-J42		3.6 V	3.76 mm		10.21 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	e0			.00015 Amp		27.33 mm	60 ns
MT18VDDT6472LAG-265XX	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		2.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		64MX72	64M	0 Cel		DUAL	1	R-XDMA-N184		2.7 V				Not Qualified	4831838208 bit	2.3 V	AUTO/SELF REFRESH		30	235				.75 ns
MT18VDDT25672Y-202	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD			268435456 words			COMMON	2.5	2.5	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	256MX72	256M	0 Cel		DUAL		R-PDMA-N184				125 MHz		Not Qualified	19327352832 bit									.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.