Texas Instruments DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TMS626812A-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	130 mA	2097152 words	1,2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	18.41 mm	7 ns
TMS464400-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.95 mm	70 ns
TMS428160AP-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		150 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			60 ns
TMS427400-80DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	80 mA	4194304 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP24/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.14 mm	80 ns
TMS44100-80SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS	75 mA	4194304 words		NO	SEPARATE	5	5	1	IN-LINE	ZIP20,.1		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	5.5 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp			80 ns
SMJ4164-12JDS	Texas Instruments	PAGE MODE DRAM	OTHER	16	DIP	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	NO	1	NMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS		65536 words			SEPARATE	5	5	1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	110 Cel	3-STATE	64KX1	64K	-55 Cel	DUAL	1	R-CDIP-T16	5.5 V	5.08 mm		7.62 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED				120 ns
TMS1103NC	Texas Instruments		OTHER	18	DIP	32	RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE			1024 words			SEPARATE			1	IN-LINE	DIP18,.3		Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	-25 Cel	DUAL		R-PDIP-T18					Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS417400P-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words		YES		5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; BATTERY BACKUP; SELF REFRESH					17.14 mm	80 ns
TMS416100-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	70 mA	16777216 words		NO	SEPARATE	5	5	1	SMALL OUTLINE	SOJ28,.34		DRAMs	1.27 mm	70 Cel	3-STATE	16MX1	16M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	80 ns
TMS428160P-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	170 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		27.305 mm	80 ns
TMS4060-1JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		60 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4		Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	DUAL		R-XDIP-T22					Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				250 ns
SMJ416400-70SVM	Texas Instruments	FAST PAGE DRAM	MILITARY	24	DIP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	SYNCHRONOUS	80 mA	4194304 words		NO	COMMON	5	5	4	IN-LINE	ZIP24,.1		DRAMs	1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	DUAL	1	R-CDIP-T24	5.5 V	13.08 mm		2.92 mm	Not Qualified	16777216 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		31.75 mm	70 ns
TMS416169A-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	100 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	70 ns
TMS44165P-60DGE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	40	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	140 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	1	R-PDSO-G40	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.00035 Amp		18.41 mm	60 ns
TMS416160A-50DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		110 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.001 Amp			50 ns
TM124MBK36G-60L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		36	MICROELECTRONIC ASSEMBLY		18			70 Cel	3-STATE	1MX36	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	37748736 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
SMJ4C1024-10HL	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	100 ns
SMJ4164-20FGL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	QCCN	256	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	PAGE	YES	1	NMOS		NO LEAD	ASYNCHRONOUS		65536 words				5		1	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	QUAD	1	R-CQCC-N18	5.5 V	2.18 mm		7.24 mm	Not Qualified	65536 bit	4.5 V	RAS ONLY REFRESH					12.32 mm	200 ns
SMJ44C256-80HLMT	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	MOS	MIL-PRF-38535	NO LEAD	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	125 Cel		256KX4	256K	-55 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH					17.145 mm	80 ns
TMS4027-15JL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	16	DIP	64	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			4096 words			SEPARATE			1	IN-LINE	DIP16,.3		DRAMs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel	DUAL		R-XDIP-T16					Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				150 ns
TMS4063JL	Texas Instruments		COMMERCIAL	18	DIP	1024	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE		30 mA	1024 words			COMMON			1	IN-LINE	DIP18,.3		Other Memory ICs	2.54 mm	70 Cel		1KX1	1K	0 Cel	DUAL		R-XDIP-T18					Not Qualified	1024 bit			NOT SPECIFIED	NOT SPECIFIED
TM893VBM40-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		8MX40	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						70 ns
TM024GAD8-15L	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	30	SIMM	512	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	440 mA	1048576 words			COMMON	5	5	8	MICROELECTRONIC ASSEMBLY	SIM30		DRAMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	SINGLE	1	R-XSMA-N30	5.5 V				Not Qualified	8388608 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.024 Amp			150 ns
TMS44C256J-10	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	DIP	512	RECTANGULAR	CERAMIC		NO		CMOS		THROUGH-HOLE		60 mA	262144 words			COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	DUAL		R-XDIP-T20					Not Qualified	1048576 bit			NOT SPECIFIED	NOT SPECIFIED	.003 Amp			100 ns
TMS45169P-50DZ	Texas Instruments	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		190 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44		DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL		R-PDSO-J40					Not Qualified	4194304 bit			NOT SPECIFIED	NOT SPECIFIED	.00035 Amp			50 ns
TMS44800S-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	120 mA	524288 words		YES	COMMON	5	5	8	SMALL OUTLINE	SOJ28,.44		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	1	R-PDSO-J28	5.5 V	3.76 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		18.415 mm	60 ns
TMS426160-70RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				3.3		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					27.38 mm	70 ns
TMS44100-80DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	TSOP2-R	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				5		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX1	4M	0 Cel	DUAL	1	R-PDSO-G20	5.5 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					17.14 mm	80 ns
TM4256EL9-12L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		262144 words			COMMON	5	5	9	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	256KX9	256K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V	16.51 mm			Not Qualified	2359296 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED				120 ns
SMJ4C1024-80HJ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SOJ	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-J20	5.5 V	3.48 mm		8.382 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	80 ns
TMS426160AP-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		90 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			60 ns
TMS426800-80DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		2097152 words				3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		2MX8	2M	0 Cel	DUAL	1	R-PDSO-J28	3.6 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					18.415 mm	80 ns
TM893NBM36Q-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1184 mA	8388608 words		NO	COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	8MX36	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	33.147 mm			Not Qualified	301989888 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.024 Amp			70 ns
TM248GBK32S-60L	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM		RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		2097152 words				5		32	MICROELECTRONIC ASSEMBLY					70 Cel		2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						60 ns
TMS626162A-12DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS	135 mA	1048576 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	83 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	22.22 mm	8 ns
TM024EAD9-15	Texas Instruments
SMJ4C1024-15HLM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	SYNCHRONOUS	55 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOLCC20/26,.35		DRAMs	1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.03 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.145 mm	150 ns
TMS464800P-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH					20.955 mm	60 ns
TMS426169P-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		20.95 mm	80 ns
SMJ44C251B-12SVM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words				5	5	4	IN-LINE	ZIP28,.1		Other Memory ICs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	2	R-CDIP-T28	5.5 V	13.08 mm		2.92 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.015 Amp		36.83 mm	120 ns
TMS45169P-50DGE	Texas Instruments	EDO DRAM	COMMERCIAL	40	TSOP	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		190 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL		R-PDSO-G40					Not Qualified	4194304 bit			NOT SPECIFIED	NOT SPECIFIED	.00035 Amp			50 ns
TM4FJ64NPU-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	144	DIMM	8192	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	440 mA	4194304 words		YES	COMMON	3.3	3.3	64	MICROELECTRONIC ASSEMBLY	DIMM144,32		DRAMs	.8 mm	70 Cel	3-STATE	4MX64	4M	0 Cel	DUAL	1	R-XDMA-N144	3.6 V	25.4 mm			Not Qualified	268435456 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.0006 Amp			60 ns
TMS55166-60DGE	Texas Instruments	VIDEO DRAM	COMMERCIAL	64	TSOP2	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words				5		16	SMALL OUTLINE, THIN PROFILE				.65 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	DUAL	2	R-PDSO-G64	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT					23.495 mm	60 ns
SMJ44C256-12HKM	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	MIL-PRF-38535	FLAT	SYNCHRONOUS	60 mA	262144 words			COMMON	5	5	4	FLATPACK	FL20,.4		DRAMs	1.27 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	1	R-CDFP-F20	5.5 V	2.41 mm		9.655 mm	Not Qualified	1048576 bit	4.5 V	CAS BEFORE RAS REFRESH	NOT SPECIFIED	NOT SPECIFIED	.003 Amp		17.015 mm	120 ns
TMS664414-10DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		4	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		16MX4	16M	0 Cel	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH					22.22 mm	7.5 ns
TM248NBK36U-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	570 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.006 Amp			60 ns
SMJ416100-70FNC	Texas Instruments	FAST PAGE DRAM	MILITARY	24	SON	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		16777216 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	16MX1	16M	-55 Cel	DUAL	1	R-CDSO-N24	5.5 V	3.18 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.685 mm	70 ns
TMS417400-60DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		4194304 words				5		4	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		4MX4	4M	0 Cel	DUAL	1	R-PDSO-G24	5.5 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS REFRESH					17.14 mm	60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.