Texas Instruments DRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Interleaved Burst Length Length Maximum Access Time

TMS44800-60DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

120 mA

524288 words

NO

COMMON

5

5

8

SMALL OUTLINE, THIN PROFILE

TSOP28,.46

DRAMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

1

R-PDSO-G28

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.41 mm

60 ns

TMS55166-70DGH

Texas Instruments

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

205 mA

262144 words

5

5

16

SMALL OUTLINE, SHRINK PITCH

SOP64,.54,32

Other Memory ICs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.38 mm

12.04 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

26.295 mm

70 ns

TMS4C1025-10N

Texas Instruments

NIBBLE MODE DRAM

COMMERCIAL

18

DIP

512

RECTANGULAR

PLASTIC/EPOXY

NIBBLE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

1048576 words

SEPARATE

5

5

1

IN-LINE

DIP18,.3

DRAMs

2.54 mm

70 Cel

3-STATE

1MX1

1M

0 Cel

DUAL

1

R-PDIP-T18

5.5 V

5.08 mm

7.62 mm

Not Qualified

1048576 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

22.48 mm

100 ns

TMS55160-80DGH

Texas Instruments

VIDEO DRAM

COMMERCIAL

64

SSOP

512

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

185 mA

262144 words

5

5

16

SMALL OUTLINE, SHRINK PITCH

SOP64,.54,32

Other Memory ICs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

2

R-PDSO-G64

5.5 V

2.38 mm

12.04 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT

NOT SPECIFIED

NOT SPECIFIED

.005 Amp

26.295 mm

80 ns

TMS416100P-70DGA

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

16777216 words

5

1

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

16MX1

16M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.14 mm

70 ns

TMS428160AP-50DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

170 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

R-PDSO-J42

Not Qualified

16777216 bit

NOT SPECIFIED

NOT SPECIFIED

.00015 Amp

50 ns

TMS417809A-70DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

100 mA

2097152 words

NO

COMMON

5

5

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

70 ns

TM497BBK32S-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

720 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

80 ns

TM4257EL9-15

Texas Instruments

TMS416169A-60DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

110 mA

1048576 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

20.95 mm

60 ns

TMS426400-10DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

17.14 mm

100 ns

TMS44400P-80DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0005 Amp

17.145 mm

80 ns

TMS416400-80DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS REFRESH

17.14 mm

80 ns

TM512LBK36C-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

512

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

820 mA

524288 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

18

DRAMs

1.27 mm

70 Cel

3-STATE

512KX36

512K

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.4 mm

Not Qualified

18874368 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.04 Amp

70 ns

TM248CBJ32F-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

364 mA

2097152 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

2MX32

2M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

17.78 mm

Not Qualified

67108864 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.004 Amp

70 ns

TMS417800-70DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

1

R-PDSO-J28

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

18.415 mm

70 ns

TMS427400P-70DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

YES

3.3

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

3.6 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH

17.14 mm

70 ns

TM496TBM40-80

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

4096

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

40

MICROELECTRONIC ASSEMBLY

70 Cel

4MX40

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

Not Qualified

167772160 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

80 ns

TM124EAD9C-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

255 mA

1048576 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

1MX9

1M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

20.4978 mm

Not Qualified

9437184 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.003 Amp

70 ns

TMS416409-80DJ

Texas Instruments

EDO DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

17.145 mm

80 ns

TMS1103JL

Texas Instruments

COMMERCIAL

18

DIP

32

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

59 mA

1024 words

SEPARATE

1

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

1KX1

1K

0 Cel

DUAL

R-XDIP-T18

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

300 ns

TM8SK64KPU-12

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

144

DIMM

16384

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

728 mA

8388608 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM144,32

DRAMs

.8 mm

70 Cel

3-STATE

8MX64

8M

0 Cel

DUAL

1

R-XDMA-N144

3.6 V

83 MHz

Not Qualified

536870912 bit

3 V

AUTO/SELF REFRESH

.016 Amp

8 ns

TMS416400-10DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

60 mA

4194304 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ24/28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

18.415 mm

100 ns

TMS427809AP-50DZ

Texas Instruments

EDO DRAM

COMMERCIAL

28

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

120 mA

2097152 words

YES

COMMON

3.3

3.3

8

SMALL OUTLINE

SOJ28,.44

DRAMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

DUAL

R-PDSO-J28

Not Qualified

16777216 bit

.00015 Amp

50 ns

TMS417400-70DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

5.5 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

18.415 mm

70 ns

TMS428169P-70DGE

Texas Instruments

EDO DRAM

COMMERCIAL

44

TSOP2

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE WITH EDO

YES

1

CMOS

GULL WING

ASYNCHRONOUS

180 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44/50,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

20.95 mm

70 ns

TMS4256-12NE

Texas Instruments

PAGE MODE DRAM

INDUSTRIAL

16

DIP

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

5

1

IN-LINE

2.54 mm

85 Cel

3-STATE

256KX1

256K

-40 Cel

DUAL

1

R-PDIP-T16

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

19.305 mm

120 ns

TM124MBK36R-60

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

945 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

37748736 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.009 Amp

60 ns

TMS416400-60DGB

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2-R

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

7.62 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS REFRESH

17.14 mm

60 ns

TMS44400-80SD

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

ZIP

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

75 mA

1048576 words

NO

COMMON

5

5

4

IN-LINE

ZIP20,.1

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

ZIG-ZAG

1

R-PZIP-T20

5.5 V

10.16 mm

2.8 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

80 ns

TM16SR64JPU-10

Texas Instruments

SYNCHRONOUS DRAM MODULE

COMMERCIAL

168

DIMM

16384

RECTANGULAR

UNSPECIFIED

FOUR BANK PAGE BURST

NO

1

CMOS

NO LEAD

SYNCHRONOUS

1568 mA

16777216 words

YES

COMMON

3.3

3.3

64

MICROELECTRONIC ASSEMBLY

DIMM168

32

DRAMs

1.27 mm

70 Cel

3-STATE

16MX64

16M

0 Cel

DUAL

1

R-XDMA-N168

3.6 V

100 MHz

Not Qualified

1073741824 bit

3 V

AUTO/SELF REFRESH

.016 Amp

7.5 ns

SM4C1024-15HKM

Texas Instruments

FAST PAGE DRAM

MILITARY

512

CERAMIC

CMOS

1048576 words

SEPARATE

5

5

1

DRAMs

125 Cel

3-STATE

1MX1

1M

-55 Cel

Not Qualified

1048576 bit

150 ns

TM4256GU9-15L

Texas Instruments

DRAM MODULE

COMMERCIAL

30

SIMM

256

RECTANGULAR

UNSPECIFIED

PAGE

NO

1

NMOS

NO LEAD

ASYNCHRONOUS

262144 words

COMMON

5

5

9

MICROELECTRONIC ASSEMBLY

SIM30

DRAMs

2.54 mm

70 Cel

3-STATE

256KX9

256K

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

16.51 mm

Not Qualified

2359296 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

150 ns

TMS427400A-50DJ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

SOJ

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

120 mA

4194304 words

NO

COMMON

3.3

3.3

4

SMALL OUTLINE

SOJ24/26,.34

DRAMs

1.27 mm

70 Cel

3-STATE

4MX4

4M

0 Cel

DUAL

1

R-PDSO-J24

3.6 V

3.76 mm

7.62 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

50 ns

TMS44400-80DM

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

20

SOJ

1024

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

75 mA

1048576 words

NO

COMMON

5

5

4

SMALL OUTLINE

SOJ20/26,.4

DRAMs

1.27 mm

70 Cel

3-STATE

1MX4

1M

0 Cel

DUAL

1

R-PDSO-J20

5.5 V

3.76 mm

8.89 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.001 Amp

17.145 mm

80 ns

TMS4063NL

Texas Instruments

COMMERCIAL

18

DIP

1024

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

30 mA

1024 words

COMMON

1

IN-LINE

DIP18,.3

Other Memory ICs

2.54 mm

70 Cel

1KX1

1K

0 Cel

DUAL

R-PDIP-T18

Not Qualified

1024 bit

NOT SPECIFIED

NOT SPECIFIED

TMS426160P-70DZ

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

42

SOJ

4096

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

J BEND

ASYNCHRONOUS

80 mA

1048576 words

YES

COMMON

3.3

3.3

16

SMALL OUTLINE

SOJ42,.44

DRAMs

1.27 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

DUAL

1

R-PDSO-J42

3.6 V

3.76 mm

10.16 mm

Not Qualified

16777216 bit

3 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

27.305 mm

70 ns

SM4256-12JDS

Texas Instruments

PAGE MODE DRAM

OTHER

16

DIP

256

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

262144 words

SEPARATE

5

5

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

100 Cel

3-STATE

256KX1

256K

-55 Cel

DUAL

R-XDIP-T16

Not Qualified

262144 bit

NOT SPECIFIED

NOT SPECIFIED

120 ns

TM124MBK36C-60

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

1024

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1050 mA

1048576 words

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

1MX36

1M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

25.527 mm

Not Qualified

37748736 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.01 Amp

60 ns

TM497GAD8A-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

30

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

4194304 words

5

8

MICROELECTRONIC ASSEMBLY

70 Cel

4MX8

4M

0 Cel

SINGLE

1

R-XSMA-N30

5.5 V

Not Qualified

33554432 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

70 ns

5962-9062203MVX

Texas Instruments

FAST PAGE DRAM

MILITARY

16

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

4194304 words

5

1

IN-LINE

2.54 mm

125 Cel

4MX1

4M

-55 Cel

DUAL

1

R-CDIP-T16

5.5 V

3.93 mm

7.62 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

20.32 mm

80 ns

SMJ44100-10HMM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

38535Q/M;38534H;883B

NO LEAD

ASYNCHRONOUS

75 mA

4194304 words

NO

SEPARATE

5

5

1

SMALL OUTLINE

SOLCC20/26,.4

DRAMs

1.27 mm

125 Cel

3-STATE

4MX1

4M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.337 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

.004 Amp

17.78 mm

100 ns

TMS4256-15NL

Texas Instruments

PAGE MODE DRAM

COMMERCIAL

16

DIP

256

RECTANGULAR

PLASTIC/EPOXY

PAGE

NO

1

NMOS

THROUGH-HOLE

ASYNCHRONOUS

262144 words

SEPARATE

5

5

1

IN-LINE

DIP16,.3

DRAMs

2.54 mm

70 Cel

3-STATE

256KX1

256K

0 Cel

DUAL

1

R-PDIP-T16

5.5 V

5.08 mm

7.62 mm

Not Qualified

262144 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

NOT SPECIFIED

NOT SPECIFIED

19.305 mm

150 ns

TMS417400-80DGC

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

24

TSOP2

2048

RECTANGULAR

PLASTIC/EPOXY

FAST PAGE

YES

1

CMOS

GULL WING

ASYNCHRONOUS

4194304 words

5

4

SMALL OUTLINE, THIN PROFILE

1.27 mm

70 Cel

4MX4

4M

0 Cel

DUAL

1

R-PDSO-G24

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

18.41 mm

80 ns

SMJ44400-15HMM

Texas Instruments

FAST PAGE DRAM

MILITARY

20

SON

1024

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

FAST PAGE

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1048576 words

5

4

SMALL OUTLINE

1.27 mm

125 Cel

3-STATE

1MX4

1M

-55 Cel

DUAL

1

R-CDSO-N20

5.5 V

2.31 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

CAS BEFORE RAS REFRESH

17.78 mm

150 ns

TM497MBM36A-70

Texas Instruments

FAST PAGE DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE

NO

1

CMOS

NO LEAD

ASYNCHRONOUS

1160 mA

4194304 words

NO

COMMON

5

5

36

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX36

4M

0 Cel

SINGLE

1

R-XSMA-N72

5.5 V

33.147 mm

Not Qualified

150994944 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.012 Amp

70 ns

TMS44165L-10DGE

Texas Instruments

FAST PAGE DRAM

COMMERCIAL

40

TSOP

1024

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

95 mA

262144 words

NO

COMMON

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

DRAMs

.8 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

DUAL

R-PDSO-G40

Not Qualified

4194304 bit

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

100 ns

TM497FBK32I-60

Texas Instruments

EDO DRAM MODULE

COMMERCIAL

72

SIMM

2048

RECTANGULAR

UNSPECIFIED

FAST PAGE WITH EDO

YES

1

CMOS

NO LEAD

SYNCHRONOUS

880 mA

4194304 words

NO

COMMON

5

5

32

MICROELECTRONIC ASSEMBLY

SSIM72

DRAMs

1.27 mm

70 Cel

3-STATE

4MX32

4M

0 Cel

QUAD

1

R-XQMA-N72

5.5 V

25.4 mm

Not Qualified

134217728 bit

4.5 V

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

.008 Amp

60 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.