Texas Instruments DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
TM4EP72DPNDGC	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		4194304 words				3.3		72	MICROELECTRONIC ASSEMBLY					70 Cel		4MX72	4M	0 Cel	DUAL	1	R-XDMA-N168	3.6 V				Not Qualified	301989888 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH						50 ns
TMS4C1024-60DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp		17.145 mm	60 ns
TMS426809AP-70DGC	Texas Instruments	EDO DRAM	COMMERCIAL	28	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS		2097152 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-G28	3.6 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH					18.41 mm	70 ns
SMJ4C1024-12FQ	Texas Instruments	FAST PAGE DRAM	MILITARY	20	SON	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		NO LEAD	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	DUAL	1	R-CDSO-N20	5.5 V	2.34 mm		8.89 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
TM497BBK32S-70	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	800 mA	4194304 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	4MX32	4M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	134217728 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.008 Amp			70 ns
TM4164EL9-15L	Texas Instruments	DRAM MODULE	COMMERCIAL	30		256	RECTANGULAR	UNSPECIFIED	PAGE	NO	1	NMOS		THROUGH-HOLE	ASYNCHRONOUS		65536 words			COMMON	5		9	MICROELECTRONIC ASSEMBLY	SIP30,.2		DRAMs	2.54 mm	70 Cel	3-STATE	64KX9	64K	0 Cel	SINGLE	1	R-XSMA-T30	5.5 V				Not Qualified	589824 bit	4.5 V	RAS ONLY REFRESH	NOT SPECIFIED	NOT SPECIFIED				150 ns
TM124BBJ32U-60	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	380 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	17.78 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.002 Amp			60 ns
TM4256GV9-20	Texas Instruments
TMS426160AP-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		80 mA	1048576 words		YES	COMMON	3.3	3.3	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL		R-PDSO-J42					Not Qualified	16777216 bit			NOT SPECIFIED	NOT SPECIFIED	.00015 Amp			70 ns
TM893VBM40-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72		2048	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		8388608 words				5		40	MICROELECTRONIC ASSEMBLY					70 Cel		8MX40	8M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	335544320 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						80 ns
TMS46400P-70DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	60 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-J20	3.6 V	3.76 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/BATTERY BACKUP/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		17.145 mm	70 ns
TM4256EL9-12	Texas Instruments
TMS46100-70SD	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	ZIP	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	NO	1	CMOS		THROUGH-HOLE	ASYNCHRONOUS		4194304 words				3.3		1	IN-LINE				1.27 mm	70 Cel		4MX1	4M	0 Cel	ZIG-ZAG	1	R-PZIP-T20	3.6 V	10.16 mm		2.8 mm	Not Qualified	4194304 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH						70 ns
TMS44101-10DJ	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS	65 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	100 ns
SMJ55161-70HKCM	Texas Instruments	VIDEO DRAM	MILITARY	64	GDFP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE WITH EDO	YES	1	CMOS	38535Q/M;38534H;883B	FLAT	ASYNCHRONOUS	225 mA	262144 words				5	5	16	FLATPACK, GUARD RING	TPAK64,1.6SQ,20		Other Memory ICs	.5 mm	125 Cel	3-STATE	256KX16	256K	-55 Cel	DUAL	2	R-CDFP-F64	5.5 V	3.81 mm		10.985 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 16 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.012 Amp		18.985 mm	70 ns
TMS4051-1NL	Texas Instruments		COMMERCIAL	18	DIP		RECTANGULAR	PLASTIC/EPOXY		NO		MOS		THROUGH-HOLE		54 mA	4096 words			COMMON			1	IN-LINE	DIP18,.3		Other Memory ICs	2.54 mm	70 Cel	OPEN-DRAIN	4KX1	4K	0 Cel	DUAL		R-PDIP-T18					Not Qualified	4096 bit			NOT SPECIFIED	NOT SPECIFIED				250 ns
CMS410-7	Texas Instruments	DRAM CARD	COMMERCIAL	60		1024	UNSPECIFIED	UNSPECIFIED	FAST PAGE	NO	1	CMOS		UNSPECIFIED	ASYNCHRONOUS	1490 mA	4194304 words			COMMON	5	5	16	MICROELECTRONIC ASSEMBLY	CARD60		DRAMs		55 Cel	3-STATE	4MX16	4M	0 Cel	UNSPECIFIED	1	X-XXMA-X60	5.25 V				Not Qualified	67108864 bit	4.75 V				.033 Amp			70 ns
SMJ418160-80HKD	Texas Instruments	FAST PAGE DRAM	MILITARY	50	DFP	1024	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		1048576 words				5		16	FLATPACK				.8 mm	125 Cel	3-STATE	1MX16	1M	-55 Cel	DUAL	1	R-CDFP-F50	5.5 V	3.55 mm		16.5 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					21 mm	80 ns
TM4256GP9-20	Texas Instruments
SMJ416400-80HKB	Texas Instruments	FAST PAGE DRAM	MILITARY	28	DFP	4096	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	YES	1	CMOS		FLAT	ASYNCHRONOUS		4194304 words				5		4	FLATPACK				1.27 mm	125 Cel	3-STATE	4MX4	4M	-55 Cel	DUAL	1	R-CDFP-F28	5.5 V	3.32 mm		11.43 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					19.655 mm	80 ns
TM248NBK36R-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	1440 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.018 Amp			80 ns
TMS4C1024-15DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		J BEND		55 mA	1048576 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL		R-PDSO-J20					Not Qualified	1048576 bit					.003 Amp			150 ns
TMS48C121-10DZ	Texas Instruments	VIDEO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	131072 words				5	5	8	SMALL OUTLINE	SOJ40,.44		Other Memory ICs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	DUAL	2	R-PDSO-J40	5.5 V	3.76 mm		10.16 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.01 Amp		26.035 mm	100 ns
TM248NBK36BK36E-60	Texas Instruments
TMS417400-80DJ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	SOJ	2048	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS	90 mA	4194304 words		NO	COMMON	5	5	4	SMALL OUTLINE	SOJ24/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX4	4M	0 Cel	DUAL	1	R-PDSO-J24	5.5 V	3.76 mm		7.62 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	80 ns
TMS44800-70DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	110 mA	524288 words		NO	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP28,.46		DRAMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		18.41 mm	70 ns
TMS418160-80RE	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		16	SMALL OUTLINE				1.27 mm	70 Cel		1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH					27.38 mm	80 ns
TMS46460P-70DGA	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS	60 mA	1048576 words		YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSSOP20/26,.36		DRAMs	1.27 mm	70 Cel	3-STATE	1MX4	1M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	4194304 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0002 Amp		17.14 mm	70 ns
TMS464160-60DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		4194304 words				3.3		16	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.955 mm	60 ns
TMS416169-80DGE	Texas Instruments	EDO DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44/50,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-G44	5.5 V	1.2 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		20.95 mm	80 ns
TMS44C257-15DJL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		262144 words				5		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	256KX4	256K	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	150 ns
TM124FBK32H-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	320 mA	1048576 words		NO	COMMON	5	5	32	MICROELECTRONIC ASSEMBLY	SSIM72	16	DRAMs	1.27 mm	70 Cel	3-STATE	1MX32	1M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.4 mm			Not Qualified	33554432 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH			.002 Amp			60 ns
TMS44800P-10DGC	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	28	TSOP2	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		524288 words		YES		5		8	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		512KX8	512K	0 Cel	DUAL	1	R-PDSO-G28	5.5 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					18.41 mm	100 ns
TMS4C1027-12DJL	Texas Instruments	STATIC COLUMN DRAM	COMMERCIAL	20	SOJ	512	RECTANGULAR	PLASTIC/EPOXY	STATIC COLUMN	YES	1	CMOS		J BEND	ASYNCHRONOUS		1048576 words				5		1	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.145 mm	120 ns
SMJ44C251A-2JDM	Texas Instruments	VIDEO DRAM	MILITARY	28	DIP	512	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	FAST PAGE	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	ASYNCHRONOUS	100 mA	262144 words				5	5	4	IN-LINE	DIP28,.4		Other Memory ICs	2.54 mm	125 Cel	3-STATE	256KX4	256K	-55 Cel	DUAL	2	R-CDIP-T28	5.25 V	4.445 mm		10.16 mm	Not Qualified	1048576 bit	4.75 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 512 X 4 SAM PORT	NOT SPECIFIED	NOT SPECIFIED	.015 Amp		36.83 mm	120 ns
TMS464409-60DGC	Texas Instruments	EDO DRAM	COMMERCIAL	32	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	MOS		GULL WING	ASYNCHRONOUS	110 mA	16777216 words		NO	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP32,.46		DRAMs	1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	DUAL	1	R-PDSO-G32	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.0005 Amp		20.95 mm	60 ns
TMS426100P-70DGB	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	24	TSOP2-R	4096	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		GULL WING	ASYNCHRONOUS		16777216 words		YES		3.3		1	SMALL OUTLINE, THIN PROFILE				1.27 mm	70 Cel		16MX1	16M	0 Cel	DUAL	1	R-PDSO-G24	3.6 V	1.2 mm		7.62 mm	Not Qualified	16777216 bit	3 V	RAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH					17.14 mm	70 ns
TM248GBK32F-60	Texas Instruments	EDO DRAM MODULE	COMMERCIAL	72		1024	RECTANGULAR	UNSPECIFIED	FAST PAGE WITH EDO	NO	1	CMOS		NO LEAD	ASYNCHRONOUS		2097152 words		YES		5		32	MICROELECTRONIC ASSEMBLY		16			70 Cel	3-STATE	2MX32	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V				Not Qualified	67108864 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH						60 ns
TMS4132-20JDL	Texas Instruments	PAGE MODE DRAM	COMMERCIAL	18	DIP	128	RECTANGULAR	CERAMIC		NO		MOS		THROUGH-HOLE			32768 words			SEPARATE			1	IN-LINE	DIP18,.3		DRAMs	2.54 mm	70 Cel	3-STATE	32KX1	32K	0 Cel	DUAL		R-XDIP-T18					Not Qualified	32768 bit								200 ns
TMS464400-70DZ	Texas Instruments	FAST PAGE DRAM	COMMERCIAL	32	SOJ	8192	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE	YES	1	CMOS		J BEND	ASYNCHRONOUS		16777216 words				3.3		4	SMALL OUTLINE				1.27 mm	70 Cel	3-STATE	16MX4	16M	0 Cel	DUAL	1	R-PDSO-J32	3.6 V	3.76 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					20.955 mm	70 ns
TMS44101-60DJ	Texas Instruments	NIBBLE MODE DRAM	COMMERCIAL	20	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	NIBBLE	YES	1	CMOS		J BEND	ASYNCHRONOUS	95 mA	4194304 words			SEPARATE	5	5	1	SMALL OUTLINE	SOJ20/26,.34		DRAMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	DUAL	1	R-PDSO-J20	5.5 V	3.76 mm		7.57 mm	Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		17.145 mm	60 ns
5962-9061704MUX	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DFP		RECTANGULAR	UNSPECIFIED	FAST PAGE	YES	1	CMOS	MIL-STD-883	FLAT	ASYNCHRONOUS		262144 words				5		4	FLATPACK				1.27 mm	125 Cel		256KX4	256K	-55 Cel	DUAL	1	R-XDFP-F20	5.5 V	2.41 mm		9.652 mm	Not Qualified	1048576 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH					17.02 mm	80 ns
TMS418169-60DZ	Texas Instruments	EDO DRAM	COMMERCIAL	42	SOJ	1024	RECTANGULAR	PLASTIC/EPOXY	FAST PAGE WITH EDO	YES	1	CMOS		J BEND	ASYNCHRONOUS	190 mA	1048576 words		NO	COMMON	5	5	16	SMALL OUTLINE	SOJ42,.44		DRAMs	1.27 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	DUAL	1	R-PDSO-J42	5.5 V	3.76 mm		10.16 mm	Not Qualified	16777216 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.001 Amp		27.305 mm	60 ns
TM248NBK36U-80	Texas Instruments	FAST PAGE DRAM MODULE	COMMERCIAL	72	SIMM	1024	RECTANGULAR	UNSPECIFIED	FAST PAGE	NO	1	CMOS		NO LEAD	ASYNCHRONOUS	440 mA	2097152 words			COMMON	5	5	36	MICROELECTRONIC ASSEMBLY	SSIM72		DRAMs	1.27 mm	70 Cel	3-STATE	2MX36	2M	0 Cel	SINGLE	1	R-XSMA-N72	5.5 V	25.527 mm			Not Qualified	75497472 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH			.006 Amp			80 ns
TM4257EQ5-20	Texas Instruments
5962-9084703MRA	Texas Instruments	FAST PAGE DRAM	MILITARY	20	DIP	1024	RECTANGULAR	CERAMIC, GLASS-SEALED	FAST PAGE	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	ASYNCHRONOUS	90 mA	1048576 words		NO	COMMON	5	5	4	IN-LINE	DIP20,.3		DRAMs	2.54 mm	125 Cel	3-STATE	1MX4	1M	-55 Cel	DUAL	1	R-GDIP-T20	5.5 V				Not Qualified	4194304 bit	4.5 V	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	NOT SPECIFIED	NOT SPECIFIED	.004 Amp			80 ns
TMS626812A-10DGER	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	44	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	130 mA	2097152 words	1,2,4,8	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32		DRAMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	DUAL	1	R-PDSO-G44	3.6 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	16777216 bit	3 V	AUTO/SELF REFRESH	NOT SPECIFIED	NOT SPECIFIED	.002 Amp	1,2,4,8	18.41 mm	7 ns
TMS664814-8DGE	Texas Instruments	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	MOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	RAS ONLY/AUTO/SELF REFRESH					22.22 mm	6 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.