EEPROM EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

24FC01T-I/OT

Microchip Technology

EEPROM

INDUSTRIAL

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

2.5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

200

.95 mm

85 Cel

128X8

128

-40 Cel

1010XXXR

DUAL

1

HARDWARE

R-PDSO-G5

5.5 V

1.45 mm

1000000 Write/Erase Cycles

1 MHz

1.63 mm

5 ms

I2C

1024 bit

1.7 V

.000001 Amp

2.95 mm

2.5

24LC1026-E/SM

Microchip Technology

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

GULL WING

SERIAL

SYNCHRONOUS

5 mA

131072 words

5

8

SMALL OUTLINE

SOP8,.3

200

1.27 mm

125 Cel

OPEN-DRAIN

128KX8

128K

-40 Cel

MATTE TIN

1010DDMR

DUAL

1

HARDWARE

R-PDSO-G8

1

5.5 V

2.03 mm

1000000 Write/Erase Cycles

.4 MHz

5.25 mm

Not Qualified

5 ms

I2C

1048576 bit

2.5 V

e3

40

260

.000005 Amp

5.26 mm

5

24LC16B-E/SNG

Microchip Technology

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

5

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

125 Cel

2KX8

2K

-40 Cel

Matte Tin (Sn)

1010MMMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.91 mm

Not Qualified

5 ms

I2C

16384 bit

2.5 V

1 MILLION ERASE/WRITE CYCLES

e3

40

260

.000005 Amp

4.9 mm

93LC56B-I/P

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

2 mA

128 words

5

YES

3/5

16

IN-LINE

DIP8,.3

8

EEPROMs

200

2.54 mm

85 Cel

NO

TOTEM POLE

128X16

128

-40 Cel

MATTE TIN

YES

DUAL

1

SOFTWARE

R-PDIP-T8

5.5 V

5.334 mm

1000000 Write/Erase Cycles

2 MHz

7.62 mm

Not Qualified

6 ms

MICROWIRE

2048 bit

2.5 V

e3

.000001 Amp

9.271 mm

AT17LV010-10PU

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

1048576 words

3.3

3.3/5

1

IN-LINE

DIP8,.3

EEPROMs

90

2.54 mm

85 Cel

1MX1

1M

-40 Cel

MATTE TIN

DUAL

HARDWARE

R-PDIP-T8

3.6 V

5.334 mm

100000 Write/Erase Cycles

10 MHz

7.62 mm

Not Qualified

1048576 bit

3 V

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

e3

.0002 Amp

9.271 mm

AT21CS11-SSH10-B

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

.5 mA

128 words

8

SMALL OUTLINE

SOP8,.23

100

1.27 mm

85 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

1

R-PDSO-G8

4.5 V

1.75 mm

1000000 Write/Erase Cycles

3.9 mm

5 ms

1-WIRE

1024 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

.0000025 Amp

4.9 mm

AT24CS32-STUM-T

Microchip Technology

EEPROM

INDUSTRIAL

5

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

4096 words

5

1.8/5

8

SMALL OUTLINE, THIN PROFILE

TSOP5/6,.11,37

EEPROMs

100

.95 mm

85 Cel

OPEN-DRAIN

4KX8

4K

-40 Cel

MATTE TIN

1010DDDR

DUAL

1

HARDWARE

R-PDSO-G5

5.5 V

1 mm

1000000 Write/Erase Cycles

1 MHz

1.6 mm

Not Qualified

5 ms

I2C

32768 bit

2.5 V

e3

.000006 Amp

2.9 mm

5

AT25256B-SSPDGV-T

Microchip Technology

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

7 mA

32768 words

5

8

SMALL OUTLINE

SOP8,.23

100

1.27 mm

125 Cel

32KX8

32K

-40 Cel

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

5 MHz

3.9 mm

5 ms

SPI

262144 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.000013 Amp

4.9 mm

5

AT28C010-12JU-235

Microchip Technology

EEPROM

INDUSTRIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

131072 words

5

8

SMALL OUTLINE

1.27 mm

85 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G32

5.5 V

3.556 mm

11.43 mm

10 ms

1048576 bit

4.5 V

13.97 mm

120 ns

5

AT28C010E-12EM/883

Microchip Technology

EEPROM

MILITARY

32

QCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-STD-883 Class B

NO LEAD

PARALLEL

ASYNCHRONOUS

80 mA

131072 words

5

YES

8

CHIP CARRIER

LCC32,.45X.55

10

1.27 mm

125 Cel

3-STATE

128KX8

128K

-55 Cel

NO

TIN LEAD

QUAD

1

HARDWARE/SOFTWARE

R-CQCC-N32

5.5 V

2.54 mm

100000 Write/Erase Cycles

11.43 mm

Not Qualified

10 ms

1048576 bit

4.5 V

128

e0

.0003 Amp

13.97 mm

120 ns

5

YES

BR24L02FV-WE2

ROHM

EEPROM

INDUSTRIAL

8

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

2.5

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

256X8

256

-40 Cel

TIN COPPER

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.5 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e2

10

260

.000002 Amp

4.4 mm

CAT93C56VI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

128 words

5

3/5

16

SMALL OUTLINE

SOP8,.25

8

EEPROMs

100

1.27 mm

85 Cel

128X16

128

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

SOFTWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

2 MHz

3.9 mm

Not Qualified

MICROWIRE

2048 bit

1.8 V

e4

30

260

.000002 Amp

4.9 mm

DS28E01P-100

Maxim Integrated

EEPROM

INDUSTRIAL

6

SOC

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

3/5

1

SMALL OUTLINE

SOC6,.17

EEPROMs

40

1.27 mm

85 Cel

1KX1

1K

-40 Cel

TIN LEAD

DUAL

R-XDSO-C6

1

5.25 V

1.5 mm

50000 Write/Erase Cycles

3.937 mm

Not Qualified

1-WIRE

1024 bit

2.8 V

e0

4.2926 mm

DS28E01P-100+

Analog Devices

EEPROM

INDUSTRIAL

6

SOC

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

C BEND

SERIAL

ASYNCHRONOUS

1024 words

3/5

1

SMALL OUTLINE

SOC6,.17

EEPROMs

40

1.27 mm

85 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-XDSO-C6

1

5.25 V

1.5 mm

50000 Write/Erase Cycles

3.76 mm

Not Qualified

1-WIRE

1024 bit

2.8 V

MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS

e3

30

260

3.94 mm

M24128-DFCS6TP/K

STMicroelectronics

EEPROM

INDUSTRIAL

8

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2.5 mA

16384 words

5

1.8/5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA8,3X5,14/8

EEPROMs

200

.4 mm

85 Cel

16KX8

16K

-40 Cel

1010DDDR

BOTTOM

HARDWARE

R-PBGA-B8

5.5 V

.58 mm

4000000 Write/Erase Cycles

1 MHz

1.081 mm

Not Qualified

5 ms

I2C

131072 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

1.271 mm

M24C64-DRDW3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

8192 words

2.5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

8KX8

8K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

1 MHz

3 mm

4 ms

I2C

65536 bit

1.8 V

e4

30

260

4.4 mm

PCF85103C-2T/00,11

NXP Semiconductors

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

3.3

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

10

1.27 mm

85 Cel

256X8

256

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDDR

DUAL

R-PDSO-G8

1

6 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.9 mm

Not Qualified

10 ms

I2C

2048 bit

2.5 V

e4

30

260

.0000035 Amp

4.9 mm

ST25DV16KC-IE8T3

STMicroelectronics

EEPROM

12

11AA02UIDT-I/TT

Microchip Technology

EEPROM

INDUSTRIAL

3

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

GULL WING

SERIAL

SYNCHRONOUS

5 mA

256 words

2.5

8

SMALL OUTLINE

SOP3,.37

200

.95 mm

85 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G3

1

5.5 V

1.12 mm

1000000 Write/Erase Cycles

.1 MHz

1.3 mm

5 ms

SPI

2048 bit

1.8 V

e3

40

260

.000001 Amp

2.9 mm

2.5

24AA16-I/SNG

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

200

1.27 mm

85 Cel

2KX8

2K

-40 Cel

Matte Tin (Sn)

1010MMMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.1 MHz

3.91 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

e3

40

260

.000001 Amp

4.9 mm

24FC64T-I/OT

Microchip Technology

EEPROM

INDUSTRIAL

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

4.5

2/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

200

.95 mm

85 Cel

OPEN-DRAIN

8KX8

8K

-40 Cel

Matte Tin (Sn) - annealed

1010DDDR

DUAL

1

HARDWARE

R-PDSO-G5

1

5.5 V

1.45 mm

1000000 Write/Erase Cycles

1 MHz

1.55 mm

Not Qualified

5 ms

I2C

65536 bit

2.5 V

ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ

e3

40

260

.000001 Amp

2.9 mm

4.5

24LC04BHT-E/OT

Microchip Technology

EEPROM

AUTOMOTIVE

5

LSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

3 mA

512 words

5

3/5

8

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

TSOP5/6,.11,37

EEPROMs

200

.95 mm

125 Cel

OPEN-DRAIN

512X8

512

-40 Cel

Matte Tin (Sn) - annealed

1010XXMR

DUAL

1

HARDWARE

R-PDSO-G5

1

5.5 V

1.45 mm

1000000 Write/Erase Cycles

.4 MHz

1.63 mm

Not Qualified

5 ms

I2C

4096 bit

2.5 V

16

e3

40

260

.000005 Amp

2.95 mm

5

YES

24LC512T-I/ST

Microchip Technology

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

65536 words

4.5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

200

.65 mm

85 Cel

64KX8

64K

-40 Cel

Matte Tin (Sn) - annealed

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

524288 bit

2.5 V

e3

40

260

.000001 Amp

4.4 mm

25LC040AT-E/SN16KVAO

Microchip Technology

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

5 mA

512 words

5

8

SMALL OUTLINE

SOP8,.23

200

1.27 mm

125 Cel

512X8

512

-40 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

10 MHz

3.9 mm

5 ms

SPI

4096 bit

2.5 V

e3

.000005 Amp

4.9 mm

5

93LC56B-I/MS

Microchip Technology

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

YES

3/5

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

8

EEPROMs

200

.65 mm

85 Cel

NO

TOTEM POLE

128X16

128

-40 Cel

Matte Tin (Sn)

YES

DUAL

1

SOFTWARE

S-PDSO-G8

1

5.5 V

1.1 mm

1000000 Write/Erase Cycles

2 MHz

3 mm

Not Qualified

6 ms

MICROWIRE

2048 bit

2.5 V

e3

40

260

.000001 Amp

3 mm

AT17LV010A-10PU

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

10 mA

1048576 words

3.3

3.3/5

1

IN-LINE

DIP8,.3

EEPROMs

2.54 mm

85 Cel

1MX1

1M

-40 Cel

MATTE TIN

DUAL

HARDWARE

R-PDIP-T8

3.6 V

5.334 mm

15 MHz

7.62 mm

Not Qualified

1048576 bit

3 V

ALSO OPERATES AT 5V SUPPLY

e3

9.271 mm

AT24C04BN-SH-B

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

512 words

2.5

2/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

512X8

512

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

4096 bit

1.8 V

e4

40

260

.000003 Amp

4.9 mm

AT24C64AN-10SI-2.7

Atmel

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

3

3/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

100

1.27 mm

85 Cel

8KX8

8K

-40 Cel

Tin/Lead (Sn/Pb)

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

20 ms

I2C

65536 bit

2.7 V

e0

30

240

.000002 Amp

4.9 mm

AT28C010E-12JU-T

Microchip Technology

EEPROM

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

131072 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

QUAD

R-PQCC-J32

5.5 V

3.556 mm

11.43 mm

10 ms

1048576 bit

4.5 V

e3

13.97 mm

120 ns

5

CAV24C04YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

4096 words

3.6

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SOP8,.25

100

.65 mm

125 Cel

4KX1

4K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

4096 bit

2.5 V

100 YEAR DATA RETENTION

e4

30

260

.000005 Amp

4.4 mm

DS2431GB+UW

Analog Devices

EEPROM

1-WIRE

M24C16-FDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

2048 words

1.8

1.8/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

200

.65 mm

85 Cel

OPEN-DRAIN

2KX8

2K

-40 Cel

MATTE TIN

1010DDDR

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

4000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

16384 bit

1.7 V

e3

.000001 Amp

4.4 mm

1.8

24AA014H-I/SN

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

TS 16949

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

2.5

8

SMALL OUTLINE

SOP8,.23

200

1.27 mm

85 Cel

OPEN-DRAIN

128X8

128

-40 Cel

MATTE TIN

1010DDDR

DUAL

1

HARDWARE

R-PDSO-G8

1

5.5 V

1.75 mm

1000000 Write/Erase Cycles

.4 MHz

3.9 mm

Not Qualified

5 ms

I2C

1024 bit

1.7 V

e3

30

260

.000001 Amp

4.9 mm

2.5

24FC1026-I/P

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

5 mA

131072 words

2.5

2/5

8

IN-LINE

DIP8,.3

EEPROMs

200

2.54 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

1010DDMR

DUAL

1

HARDWARE

R-PDIP-T8

5.5 V

5.334 mm

1000000 Write/Erase Cycles

1 MHz

7.62 mm

Not Qualified

5 ms

I2C

1048576 bit

1.8 V

e3

.000005 Amp

9.271 mm

2.5

25AA256-I/MF

Microchip Technology

EEPROM

INDUSTRIAL

8

HVSON

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

NO LEAD

SERIAL

SYNCHRONOUS

6 mA

32768 words

2.5

2/5

8

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SOLCC8,.25

EEPROMs

200

1.27 mm

85 Cel

32KX8

32K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-N8

1

5.5 V

1 mm

1000000 Write/Erase Cycles

10 MHz

5 mm

Not Qualified

5 ms

SPI

262144 bit

1.8 V

e3

40

260

.000001 Amp

6 mm

2.5

25AA320A-I/MS

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

5 mA

4096 words

5

2/5

8

SMALL OUTLINE

SOP8,.19

EEPROMs

200

.65 mm

85 Cel

3-STATE

4KX8

4K

-40 Cel

Matte Tin (Sn)

DUAL

1

HARDWARE/SOFTWARE

S-PDSO-G8

1

5.5 V

1.1 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

32768 bit

4.5 V

OPERATES WITH 1.8V MIN @ 3 MHZ

e3

40

260

.000005 Amp

3 mm

5

93C46B-I/P

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

2 mA

64 words

5

5

16

IN-LINE

DIP8,.3

EEPROMs

200

2.54 mm

85 Cel

NO

TOTEM POLE

64X16

64

-40 Cel

MATTE TIN

YES

DUAL

1

SOFTWARE

R-PDIP-T8

5.5 V

5.334 mm

1000000 Write/Erase Cycles

3 MHz

7.62 mm

Not Qualified

6 ms

MICROWIRE

1024 bit

4.5 V

1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS

e3

.000001 Amp

9.27 mm

93C46B/P

Microchip Technology

EEPROM

COMMERCIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

1.5 mA

64 words

5

5

16

IN-LINE

DIP8,.3

EEPROMs

200

2.54 mm

70 Cel

64X16

64

0 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDIP-T8

5.5 V

5.334 mm

1000000 Write/Erase Cycles

2 MHz

7.62 mm

Not Qualified

2 ms

MICROWIRE

1024 bit

4.5 V

e3

.000001 Amp

9.271 mm

5

93LC86T-I/SN

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

1024 words

5

3/5

16

SMALL OUTLINE

SOP8,.23

8

EEPROMs

200

1.27 mm

85 Cel

1KX16

1K

-40 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

1

6 V

1.75 mm

1000000 Write/Erase Cycles

3 MHz

3.9 mm

Not Qualified

5 ms

MICROWIRE

16384 bit

4.5 V

2.5V TO 4.5V @ 2MHz

e3

30

260

.00003 Amp

4.9 mm

5

AT24C01D-PUM

Microchip Technology

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

TS 16949

THROUGH-HOLE

SERIAL

SYNCHRONOUS

1 mA

128 words

3

1.8/3.3

8

IN-LINE

DIP8,.3

EEPROMs

100

2.54 mm

85 Cel

OPEN-DRAIN

128X8

128

-40 Cel

MATTE TIN

1010DDDR

DUAL

1

HARDWARE

R-PDIP-T8

3.6 V

5.334 mm

1000000 Write/Erase Cycles

1 MHz

7.62 mm

Not Qualified

5 ms

I2C

1024 bit

2.5 V

ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ

e3

.0000008 Amp

9.271 mm

3

AT25080B-XHL-T

Microchip Technology

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

1024 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

1KX8

1K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

20 MHz

3 mm

Not Qualified

5 ms

SPI

8192 bit

4.5 V

2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz

e4

260

.00001 Amp

4.4 mm

AT28LV010-20TU-630

Microchip Technology

EEPROM

INDUSTRIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

15 mA

131072 words

3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

10

.5 mm

85 Cel

128KX8

128K

-40 Cel

MATTE TIN

DUAL

1

HARDWARE/SOFTWARE

R-PDSO-G32

3.465 V

1.2 mm

100000 Write/Erase Cycles

8 mm

10 ms

1048576 bit

3.135 V

e3

.00005 Amp

18.4 mm

200 ns

3

AT88SC12816C-SU

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

ASYNCHRONOUS

131072 words

3.3

1

SMALL OUTLINE

SOP8,.23

1.27 mm

85 Cel

128KX1

128K

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G8

1

5.5 V

1.75 mm

5 MHz

3.9 mm

Not Qualified

7 ms

I2C

131072 bit

2.7 V

ALSO SUPPORTS SYNCHRONOUS OPERATION

e3

4.925 mm

35 ns

AT93C46EN-SH-B

Microchip Technology

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

64 words

5

2/5

16

SMALL OUTLINE

SOP8,.23

8

EEPROMs

100

1.27 mm

85 Cel

3-STATE

64X16

64

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

1

R-PDSO-G8

3

5.5 V

1.75 mm

1000000 Write/Erase Cycles

2 MHz

3.9 mm

Not Qualified

5 ms

MICROWIRE

1024 bit

4.5 V

CONFIGURABLE AS 128 X 8

e4

40

260

.000015 Amp

4.9 mm

5

M24C01-WBN6P

STMicroelectronics

EEPROM

INDUSTRIAL

8

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

SERIAL

SYNCHRONOUS

2 mA

128 words

5

3/5

8

IN-LINE

DIP8,.3

EEPROMs

40

2.54 mm

85 Cel

128X8

128

-40 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

R-PDIP-T8

5.5 V

5.33 mm

1000000 Write/Erase Cycles

.4 MHz

7.62 mm

Not Qualified

5 ms

I2C

1024 bit

2.5 V

e3

.000001 Amp

9.27 mm

M24C64-DFDW6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

2.5

1.8/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

40

.65 mm

85 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

4.4 mm

M24C64-DFMN6TP

STMicroelectronics

EEPROM

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

8192 words

2.5

1.8/5

8

SMALL OUTLINE

SOP8,.25

EEPROMs

40

1.27 mm

85 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

5.5 V

1.75 mm

1000000 Write/Erase Cycles

1 MHz

3.9 mm

Not Qualified

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

4.9 mm

M93C66-RMN3TP/K

STMicroelectronics

EEPROM

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

256 words

2.5

16

SMALL OUTLINE

8

1.27 mm

125 Cel

256X16

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.75 mm

2 MHz

3.9 mm

4 ms

MICROWIRE

4096 bit

1.8 V

e4

30

260

4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.