20 EEPROM 279

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
XCF01SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		2MX1	2M	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories		.65 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm		33 MHz	4.4 mm	Not Qualified			4194304 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4MX1	4M	-40 Cel	MATTE TIN		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e3					6.5024 mm
XCF02SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2MX1	2M	-40 Cel	MATTE TIN		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e3					6.5024 mm
XCF02SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2MX1	2M	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e3	30	260			6.5024 mm
XCF01SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel	MATTE TIN		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e3					6.5024 mm
XCF01SVOG20C0100	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel			DUAL		R-PDSO-G20		3.6 V	1.19 mm			4.4 mm				1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		NOT SPECIFIED	NOT SPECIFIED			6.5024 mm
XCF01SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel	MATTE TIN		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e3					6.5024 mm
XCF02SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		2MX1	2M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e0					6.5024 mm
XCF04SVO20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V		e0					6.5024 mm
AT17LV010-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		1MX1	1M	-40 Cel	MATTE TIN		QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e3				.0002 Amp	8.9662 mm
XCF01SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	1.8/3.3,3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2MX1	2M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e0	30	225			6.5024 mm
XCF02SVO20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2097152 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		2MX1	2M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V		e0					6.5024 mm
XCF01SVO20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e0					6.5024 mm
XCF01SVO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V		e0					6.5024 mm
AT17LV010A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		1MX1	1M	-40 Cel	MATTE TIN	YES	QUAD	HARDWARE	S-PQCC-J20		3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3				.0002 Amp	8.9662 mm
AT17LV002A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		2MX1	2M	-40 Cel	MATTE TIN	YES	QUAD	HARDWARE	S-PQCC-J20		3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3				.00035 Amp	8.9662 mm
AT17LV002-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		2MX1	2M	-40 Cel	MATTE TIN		QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e3				.00035 Amp	8.9662 mm
AT17LV512-10JC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words		3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs		1.27 mm	70 Cel		512KX1	512K	0 Cel	TIN LEAD		QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e0		225			8.9662 mm
XC1701LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	12.827 mm
XC18V01SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
AT18F010-30XU	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs		.65 mm	85 Cel		1MX1	1M	-40 Cel			DUAL		R-PDSO-G20		3.6 V	1.2 mm	100000 Write/Erase Cycles	33 MHz	4.4 mm	Not Qualified			1048576 bit	3 V						.001 Amp	6.5 mm
XC18V01PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V01PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V01SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)		DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
AT17C128-10SI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words		5	5	1	SMALL OUTLINE	SOP20,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G20		5.5 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	4.5 V		e0				.002 Amp	12.8 mm	55 ns
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words		3.3	3/3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories		1.27 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD		QUAD		S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms		4194304 bit	2.97 V		e0			NOR TYPE	.001 Amp	8.9662 mm
AT25256T2-10TI	Atmel	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	200	.65 mm	85 Cel		32KX8	32K	-40 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20	2	5.5 V	1.2 mm	100000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	5 ms	SPI	262144 bit	4.5 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES	e0		240		.000005 Amp	6.5 mm
XC17V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)		DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC18V01PC20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD		QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			1048576 bit	3 V		e0					8.9662 mm	15 ns
AT17LV256-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words		3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		256KX1	256K	-40 Cel	MATTE TIN		QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e3				.00015 Amp	8.9662 mm	80 ns
AT17LV512A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	524288 words		3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	EEPROMs	90	1.27 mm	85 Cel		512KX1	512K	-40 Cel	MATTE TIN	YES	QUAD	HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3				.0002 Amp	8.9662 mm
CAT25C128Y20A-1.8-GT3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-1.8	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20A-T3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A-1.8-G	Onsemi	EEPROM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	2/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	10 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 1.8MIN					.00001 Amp
CAT25C128Y20A-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20I-G	Onsemi	EEPROM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	3/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN					.000001 Amp
CAT25C128Y20E-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-T3	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A-T2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-T3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.