20 EEPROM 279

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
XC17512LPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		524288 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		512KX1	512K	0 Cel	MATTE TIN	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		8.9662 mm
XC17V04PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		4MX1	4M	0 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		4194304 bit	3 V		e3	30	245		8.9662 mm
XC17V01PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified		1048576 bit	3 V		e3	30	245		8.9662 mm
XC17S100ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	781216X1	781216	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified		781216 bit	3 V		e0	30	225	.001 Amp	12.8 mm
XC1701LPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245	.00005 Amp	8.9662 mm
XC17512LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified		524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17S15ASOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		197696 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		197696X1	197696	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified		197696 bit	3 V		e3	30	260		12.8 mm
XC1765ELPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn85Pb15)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225	.00005 Amp	8.9662 mm
XC17128DPC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	5.25 V	4.572 mm		12.5 MHz	8.9662 mm	Not Qualified		131072 bit	4.75 V		e0	30	225	.00005 Amp	8.9662 mm
XC17S200XLSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1335872 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		1335872X1	1335872	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified		1335872 bit	3 V		e0	30	225		12.8 mm
X55621V20-2.7A	Renesas Electronics	EEPROM	COMMERCIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	70 Cel		32KX8	32K	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20			1.2 mm	1000000 Write/Erase Cycles		4.4 mm	Not Qualified	SPI	262144 bit						.000001 Amp	7.01 mm
X55621V20I-2.7A	Renesas Electronics	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
X55621V20I-4.5A	Renesas Electronics	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words		5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
X55621V20I-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
X55621V20-4.5A	Renesas Electronics	EEPROM	COMMERCIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words		5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	70 Cel		32KX8	32K	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
X55621V20-2.7	Renesas Electronics	EEPROM	COMMERCIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	70 Cel		32KX8	32K	0 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
X55621V20I	Renesas Electronics	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words		5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified	SPI	262144 bit						.000001 Amp
EPC1064LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20		5.25 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1213LC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		26624 words	COMMON	5	5	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	26KX8	26K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20		5.25 V	4.57 mm		8 MHz	8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		8.9662 mm
EPC1064VLC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	1	3.6 V	4.572 mm		6 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		8.9662 mm
EPC1441LCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1		J BEND		SYNCHRONOUS		440800 words		3.3		1	CHIP CARRIER					85 Cel		440800X1	440800	-40 Cel		QUAD		S-PQCC-J20		3.6 V					Not Qualified		440800 bit	3 V	CAN ALSO BE OPERATED AT 4.5 TO 5.5V RANGE
EPC1213LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	212942X1	212942	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	1	5.5 V	4.572 mm		6 MHz	8.9662 mm	Not Qualified		212942 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220		8.9662 mm
EPC1213LC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		212942 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	212942X1	212942	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	1	5.25 V	4.572 mm		6 MHz	8.9662 mm	Not Qualified		212942 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220		8.9662 mm
EPC1213LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		212992 words		5		1	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		QUAD		S-PQCC-J20		5.25 V	4.57 mm			8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1064VLI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND		SYNCHRONOUS		65536 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20		3.6 V	4.572 mm		6 MHz	8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		8.9662 mm
EPC1064VLC	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20		3.6 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1064LM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		S-PQCC-J20		5.25 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1VLI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	130812X8	130812	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20		3.6 V	4.57 mm			8.9662 mm	Not Qualified		1046496 bit	3 V		e0		220		8.9662 mm
EPC1064LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	1	5.5 V	4.572 mm		4 MHz	8.9662 mm	Not Qualified		65536 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0		220		8.9662 mm
EPC1064LC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		65536 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J20	1	5.25 V	4.572 mm		4 MHz	8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0	20	220		8.9662 mm
EPC1VLC20	Altera	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	MOS	J BEND	SERIAL	SYNCHRONOUS		130812 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	130812X8	130812	0 Cel	TIN LEAD	QUAD		S-PQCC-J20		3.6 V	4.57 mm			8.9662 mm	Not Qualified		1046496 bit	3 V		e0		220		8.9662 mm
EPC1064VLCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1		J BEND		SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER					85 Cel		64KX1	64K	-40 Cel		QUAD		S-PQCC-J20		3.6 V					Not Qualified		65536 bit	3 V
EPC1064VLI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20		3.6 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1213LM20	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		212992 words		5		1	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	208KX1	208K	-55 Cel		QUAD		S-PQCC-J20		5.5 V	4.57 mm			8.9662 mm	Not Qualified		212992 bit	4.5 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1213LI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		212992 words		5		1	CHIP CARRIER				1.27 mm	85 Cel	3-STATE	208KX1	208K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20		5.25 V	4.57 mm			8.9662 mm	Not Qualified		212992 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1064VLM	Altera	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel	3-STATE	64KX1	64K	-55 Cel		QUAD		S-PQCC-J20		3.6 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	3 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES					8.9662 mm
EPC1064LI	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS		65536 words		5		1	CHIP CARRIER				1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20		5.25 V	4.57 mm			8.9662 mm	Not Qualified		65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES	e0				8.9662 mm
EPC1064LCI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1		J BEND		SYNCHRONOUS		65536 words		5		1	CHIP CARRIER					85 Cel		64KX1	64K	-40 Cel		QUAD		S-PQCC-J20		5.5 V					Not Qualified		65536 bit	4.5 V

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.