20 EEPROM 279

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
XC18128PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm		15 MHz	8.9662 mm	Not Qualified	131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC1801SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V512SO20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V							12.8 mm	15 ns
XC1801SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V01PCG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V		e3					8.9662 mm	15 ns
XC18V512SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512SO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V		e0					12.8 mm	15 ns
XC18V512PC20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V		e0					8.9662 mm	15 ns
XC18V01PCG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V		e3					8.9662 mm	15 ns
XC18V01SO20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	3 V							12.8 mm	15 ns
XC18V01PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC1801PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18128SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V512SOG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V		e3					12.8 mm	15 ns
XQ1701LSOG20N	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE				1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V		e3	30	260			12.8 mm
XC18V256PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18256SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		256KX1	256K	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V01PC20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V							8.9662 mm	15 ns
XC18512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		512KX1	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V512SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V256SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		256KX1	256K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V256SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
XC18V128PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		128KX1	128K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	3 V							8.9662 mm	20 ns
XC18V512SOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V		e3					12.8 mm	15 ns
XC18V128SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	131072 bit	3 V		e0					12.8 mm	20 ns
XC18V128SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		128KX1	128K	0 Cel		DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified	131072 bit	3 V							12.8 mm	20 ns
XC17S15ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	197696 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC17S200XLSOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1335872 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		1335872X1	1335872	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1335872 bit	3 V		e3	30	260			12.8 mm
XC17256DPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	256KX1	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		12 MHz	8.9662 mm	Not Qualified	262144 bit	4.5 V		e0	30	225		.00005 Amp	8.9662 mm
XC1765LPC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	5	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX1	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm		2.5 MHz	8.9662 mm	Not Qualified	65536 bit	4.5 V		e0	30	225		.0015 Amp	8.9662 mm
XC17S100ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	781216 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC17S100ASOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		781216 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		781216X1	781216	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	781216 bit	3 V		e3	30	260			12.8 mm
XC1701LSOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE				1.27 mm	70 Cel		1MX1	1M	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm			7.5184 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260			12.827 mm
XCF01SVO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX1	1M	-40 Cel		DUAL	R-PDSO-G20		3.6 V	1.19 mm			4.4 mm	Not Qualified	1048576 bit	3 V							6.5024 mm
XC1765ELPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		65536 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		64KX1	64K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC17V02PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	2MX1	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	2097152 bit	3 V		e0	30	225		.001 Amp	8.9662 mm
XC1701-PCG20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.5 V	4.57 mm			8.9662 mm	Not Qualified	1048576 bit	4.5 V		e3					8.9662 mm	45 ns
XC1701SOG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE				1.27 mm	70 Cel		1MX1	1M	0 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	5.25 V	2.6416 mm			7.5184 mm	Not Qualified	1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260			12.827 mm
XC17128EPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		131072 words		5		1	CHIP CARRIER				1.27 mm	85 Cel		128KX1	128K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.5 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	4.5 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC17512LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	524288 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	512KX1	512K	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified	524288 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	12.827 mm
XC17128-PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	5.25 V	4.318 mm		10 MHz	8.9662 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.0005 Amp	8.9662 mm
XC17256EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC17256ELPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		262144 words		3.3		1	CHIP CARRIER				1.27 mm	85 Cel		256KX1	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	262144 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC1701PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		5		1	CHIP CARRIER				1.27 mm	70 Cel		1MX1	1M	0 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	5.25 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245			8.9662 mm
XC1701-SO20M	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1048576 words		5		1	SMALL OUTLINE				1.27 mm	125 Cel		1MX1	1M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	5.5 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	4.5 V		e0					12.8 mm	45 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.