20 EEPROM 279

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
CAT25C128Y20E-GT2	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-G	Onsemi	EEPROM	AUTOMOTIVE	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	3/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN					.00001 Amp
CAT25C128Y20E-1.8-GT3	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-T2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20I	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20A-GT3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A-1.8-T3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-1.8-G	Onsemi	EEPROM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	2/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	10 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 1.8MIN					.000001 Amp
CAT25C128Y20I-GT3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20E-T2	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-GT2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20E-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20E	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20I-1.8	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20A-GT2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-GT3	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20E-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	2/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	10 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 1.8MIN					.00001 Amp
CAT25C128Y20I-1.8-GT3	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.000001 Amp
CAT25C128Y20A-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A-1.8	Onsemi	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C128Y20A-G	Onsemi	EEPROM	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words		5	3/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	105 Cel		16KX8	16K	-40 Cel		DUAL	HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN					.00001 Amp
XC18512SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		512KX1	512K	0 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified			524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V01SOG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			1048576 bit	3 V		e3					12.8 mm	15 ns
XC18V01SO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			1048576 bit	3 V		e0					12.8 mm	15 ns
XC18V01SO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			1048576 bit	3 V		e0					12.8 mm	15 ns
XC18256SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		256KX1	256K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified			262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V512SO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			524288 bit	3 V		e0					12.8 mm	15 ns
XC18V512SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC1801PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V01SOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			1048576 bit	3 V		e3					12.8 mm	15 ns
XC18V01PC20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			1048576 bit	3 V		e0					8.9662 mm	15 ns
XC18V512PC20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel		QUAD		S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified			524288 bit	3 V							8.9662 mm	15 ns
XC18V128PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER				1.27 mm	70 Cel		128KX1	128K	0 Cel		QUAD		S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified			131072 bit	3 V							8.9662 mm	20 ns
XC18V512PC20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			524288 bit	3 V		e0					8.9662 mm	15 ns
XC18V512PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V128SOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		128KX1	128K	-40 Cel	MATTE TIN	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified			131072 bit	3 V		e3					12.8 mm	20 ns
XC18512PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		512KX1	512K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18256PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		256KX1	256K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XQ1701LSO20N	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC18V512PCG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			524288 bit	3 V		e3					8.9662 mm	15 ns
XC18V512PCG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			524288 bit	3 V		e3					8.9662 mm	15 ns
XC18128SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		128KX1	128K	0 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified			131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18128PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		128KX1	128K	0 Cel	TIN LEAD	QUAD		S-PQCC-J20	3	3.6 V	4.57 mm		15 MHz	8.9662 mm	Not Qualified			131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18512SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		512KX1	512K	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified			524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.