4 EEPROM 474

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CAT24S128C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM	S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ	e1	30	260		.85 mm
LE24L042CS	Onsemi	EEPROM	INDUSTRIAL	4	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5	1.8/3.3	8	GRID ARRAY	BGA4(UNSPEC)	EEPROMs	20		85 Cel	512X8	512	-40 Cel		1010000R	BOTTOM	R-PBGA-B4		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	1.7 V					.000002 Amp
CAT24C64BAC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel	TIN SILVER		BOTTOM	S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	65536 bit	1.7 V		e2	30	260		.76 mm
CAT24C08C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel	64X16	64	-40 Cel	MATTE TIN		BOTTOM	R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.8 V		e3				.856 mm
CAT24C16C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		BOTTOM	R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V		e3				.856 mm
CAT24S128C4XTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	16KX8	16K	-40 Cel			BOTTOM	S-PBGA-B4		5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ					.85 mm
CAT24C04C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel	32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM	R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V		e4				.856 mm
CAT24C04C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel	4KX1	4K	-40 Cel		1010000R	BOTTOM	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C08C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel	8KX1	8K	-40 Cel	TIN SILVER COPPER	10100MMR	BOTTOM	R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e1	30	260	.000001 Amp	.86 mm
CAT24C16C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM	R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V		e4				.856 mm
CAT24C32BC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	S-PBGA-B4		5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	32768 bit	1.7 V						.76 mm
CAV24C16C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16384 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel	16KX1	16K	-40 Cel	TIN SILVER COPPER		BOTTOM	R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	16384 bit	2.5 V		e1	30	260		.86 mm
LE24L042CS-LV	Onsemi	EEPROM	INDUSTRIAL	4	BGA		PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		3 mA	512 words		1.8/3.3	8	GRID ARRAY	BGA4(UNSPEC)	EEPROMs	20		85 Cel	512X8	512	-40 Cel		1010000R	BOTTOM					100000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000002 Amp
CAT24S128C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM	S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ	e1	30	260		.85 mm
CAT24C32C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel	Tin/Silver (Sn/Ag)		BOTTOM	S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	1.7 V		e2	30	260		.76 mm
M24C32-RCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-WCU5TG/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-DFCU6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C64-FCU6TP/12F	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V						.795 mm
M24C32-RCU5G/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-DFCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-RCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C08-WCT6TP/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	1KX8	1K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.33 mm		.4 MHz	.685 mm		5 ms	I2C	8192 bit	2.5 V						.695 mm
M24128T-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	16KX8	16K	-40 Cel			BOTTOM	S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V						.833 mm
M24C64X-FCP6/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.25 mm		1 MHz	.711 mm		5 ms	I2C	65536 bit	1.7 V						.731 mm
M24C64-DFCU6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32M-FCU6/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-RCU6P/PF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-RCU6G/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-RCU6TG/12	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V						.795 mm
M24C32T-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	4096 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V						.833 mm
M24C32-WCU6G/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-FCU6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C64-RCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-XCU5TG/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU5P/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-WCU6G/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-RCU5P/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-RCU6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-WCU6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-FCU6TG/12	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V						.795 mm
M24C64-RCU6P/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-DFCU6TP/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32M-FCU6/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-DFCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-FCU5TG/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C64X-FCP6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM	R-PBGA-B4		5.5 V	.25 mm		1 MHz	.711 mm		5 ms	I2C	65536 bit	1.7 V						.731 mm
M24C32-XCU5P/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	4KX8	4K	-20 Cel			BOTTOM	R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.