4 EEPROM 474

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
M24C32-FCU6G/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-RCU6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-XCU6TP/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-DFCU6P/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-DFCU5G/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU6P/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-FCU5G/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-DFCU5P/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-DFCU5TP/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-DFCU5TG/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C64-RCU6TP/12F	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	1.8 V						.795 mm
M24C32-FCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-RCU6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-FCU5TG/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C64-WCU6TP/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-XCU5P/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C64-FCU6TP/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-FCU6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-RCU5TP/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-WCU6P/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-WCU6P/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-XCU6TG/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU6TG/PF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C64-DFCU6P/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-XCU6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C64-FCU6TP/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	65536 bit	1.6 V	IT ALSO OPERATES AT 0 TO 85 TEMP AT WRITE OPERATION		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24128X-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	2.5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,20/16	200	.5 mm	85 Cel	16KX8	16K	-40 Cel	1010MMMR	BOTTOM	SOFTWARE	S-PBGA-B4	5.5 V	.33 mm	4000000 Write/Erase Cycles	1 MHz	.851 mm	5 ms	I2C	131072 bit	1.7 V	TERM PITCH-MAX	32	NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	.851 mm	2.5
M24C32-DFCU5TP/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32M-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-XCU6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU6TP/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-XCU5P/KF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-DFCU6TP/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4096 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		S-PBGA-B4	5.5 V	.3 mm		1 MHz	.833 mm	5 ms	I2C	32768 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C64-RCU6TP/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	2.5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-WCU6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-WCU6TP/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-DFCU6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.7 V						.795 mm
M24128S-FCV6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	16KX8	16K	-40 Cel		BOTTOM		S-PBGA-B4	5.5 V	.275 mm		1 MHz	.851 mm	5 ms	I2C	131072 bit	1.7 V						.851 mm
M24C32-FCU6P/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-XCU5TG/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU5TP/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C08-FCT6TG/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.33 mm		.4 MHz	.685 mm	5 ms	I2C	8192 bit	1.6 V						.695 mm
M24C64-RCU6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-XCU5G/KF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-WCU6TP/PF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm	5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-RCU6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm	5 ms	I2C	32768 bit	1.8 V						.795 mm
M24128S-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel	16KX8	16K	-40 Cel		BOTTOM		S-PBGA-B4	5.5 V	.33 mm		1 MHz	.833 mm	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		.833 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.