4 EEPROM 474

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

M24C32-RCU6G/P

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C64-WCU6G/TF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-RCU5G/K

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C64-WCU6TP/K

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-RCU6TG/KF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C64-RCU6P/12

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.8 V

.795 mm

M24C64-DFCU6TG/KF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

2.5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C64-FCU6TG/P

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C64-DFCU6P/K

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-XCU5TP/T

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-WCU5G/KF

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

2.5 V

.795 mm

M24C32-DFCU5TG/PF

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C32-XCU6P/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-WCU6G/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

32768 bit

2.5 V

.795 mm

M24C32-DFCU5G/T

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-FCU5TG/P

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C32-FCU6TG/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C32-RCU6G/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C32-XCU6G/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C64-WCU6P/12F

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

2.5 V

.795 mm

M24C32-XCU5TP/P

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-RCU6P/TF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C64T-FCU6T/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

S-PBGA-B4

5.5 V

.3 mm

1 MHz

.833 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.833 mm

M24C32-DFCU5G/PF

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C64-RCU6TP/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-WCU6TG/TF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

2.5 V

.795 mm

M24C64-DFCU6G/K

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C64-DFCU6P/TF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C64-DFCU6TG/PF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-XCU5TG/T

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-DFCU5TG/KF

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24128X-FCU6/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2.5 mA

16384 words

2.5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16KX8

16K

-40 Cel

BOTTOM

S-PBGA-B4

5.5 V

.3 mm

1 MHz

.851 mm

5 ms

I2C

131072 bit

1.7 V

TERM PITCH-MAX

NOT SPECIFIED

NOT SPECIFIED

.851 mm

M24C32-XCU6P/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C64-RCU6TP/P

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

.4 MHz

.674 mm

5 ms

I2C

65536 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-FCU5P/P

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C64-WCU6P/KF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

2.5 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C32-WCU6G/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

2.5 V

.795 mm

M24C32-FCU6G/K

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C32-FCU5TP/P

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.7 V

.795 mm

M24C32-RCU6TP/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C08-RCT6P/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

1024 words

2.5

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

1KX8

1K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.33 mm

.4 MHz

.685 mm

5 ms

I2C

8192 bit

1.8 V

.695 mm

M24C32-WCU5TP/K

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

2.5 V

.795 mm

M24C32-XCU6TG/TF

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C32-XCU6G/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.32 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

M24C64-FCU6P/K

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

8192 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

65536 bit

1.7 V

NOT SPECIFIED

NOT SPECIFIED

.795 mm

M24C64X-FCV6/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

2.5 mA

8192 words

1.8

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

8KX8

8K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.3 mm

1 MHz

.711 mm

5 ms

I2C

65536 bit

1.7 V

.731 mm

M24C32-RCU6TG/T

STMicroelectronics

EEPROM

INDUSTRIAL

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-40 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

5 ms

I2C

32768 bit

1.8 V

.795 mm

M24C32-XCU5TP/TF

STMicroelectronics

EEPROM

OTHER

4

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SERIAL

SYNCHRONOUS

5 mA

4096 words

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.4 mm

85 Cel

4KX8

4K

-20 Cel

BOTTOM

R-PBGA-B4

5.5 V

.345 mm

1 MHz

.674 mm

10 ms

I2C

32768 bit

1.6 V

.795 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.