4 EEPROM 474

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CAT24C04C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel			4KX1	4K	-40 Cel	TIN SILVER COPPER	1010000R		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
M24C08-FCT6TP/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			1KX8	1K	-40 Cel	TIN SILVER COPPER			BOTTOM			R-PBGA-B4		5.5 V	.33 mm		.4 MHz	.685 mm		5 ms	I2C	8192 bit	1.6 V			e1		260		.695 mm
CAT24C08C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel			8KX1	8K	-40 Cel	TIN SILVER COPPER	10100MMR		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
LE24L042CS-B-TFM-H	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			20	.4 mm	85 Cel			512X8	512	-40 Cel	TIN SILVER COPPER			BOTTOM			R-PBGA-B4	1	3.6 V	.5 mm		.4 MHz	.79 mm		10 ms	I2C	4096 bit	1.7 V	20 YEAR DATA RETENTION		e1	30	260		1.06 mm
24CW640T-I/CS0668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	8192 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		200	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	65536 bit	1.6 V						.000001 Amp			1.8
AT24CSW020-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	1 mA	256 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel			256X8	256	-40 Cel	TIN SILVER COPPER	1010DDDR		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B4		3.6 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	2048 bit	1.7 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	8	e1			.0000008 Amp			1.8
11AA020T-I/CS16K	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	5 mA	256 words	5	NO	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,35/16	EEPROMs	200	.4 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	TIN SILVER COPPER		NO	BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.55 mm	1000000 Write/Erase Cycles	3 MHz		Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e1			.000005 Amp
N24S64BC4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ		e1	30	260		.77 mm
24CW1280T-I/CS0668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		200	.4 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	TIN SILVER COPPER	1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V			e1			.000001 Amp			1.8
M24C64X-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM			R-PBGA-B4		5.5 V	.328 mm		1 MHz	.711 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.731 mm
AT21CS11-UU0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			128X8	128	-40 Cel				BOTTOM			X-PBGA-B4		4.5 V	.355 mm					5 ms	1-WIRE	1024 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED
CAT24C64C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	1.8		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010000R		BOTTOM		HARDWARE	S-PBGA-B4	1	5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.76 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e2	30	260	.000003 Amp	.76 mm
11AA160T-I/CS16K	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	NO	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,35/16	EEPROMs	200	.4 mm	85 Cel	NO	TOTEM POLE	2KX8	2K	-40 Cel	TIN SILVER COPPER		NO	BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.55 mm	1000000 Write/Erase Cycles	3 MHz		Not Qualified	10 ms	1-WIRE	16384 bit	1.8 V			e1			.000005 Amp
CAV24C32C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			4KX8	4K	-40 Cel	Tin/Silver (Sn/Ag)			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	2.5 V			e2	NOT SPECIFIED	NOT SPECIFIED		.76 mm
M24C32T-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	4096 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
AT24C08D-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			1KX8	1K	-40 Cel				BOTTOM			S-PBGA-B4		3.6 V	.355 mm		1 MHz			5 ms	I2C	8192 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED
24CW1280T-I/CS1668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,20		200	.5 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	TIN SILVER COPPER	1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V	TERM PITCH-MAX		e1			.000001 Amp			1.8
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm		5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
M24128S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C16-DFCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel	TIN SILVER COPPER			BOTTOM			R-PBGA-B4		5.5 V	.3 mm		.4 MHz	.725 mm			I2C	16384 bit	1.6 V			e1		260		.819 mm
BRCF016GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel				BOTTOM			R-PBGA-B4		5.5 V	.35 mm		1 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.86 mm
AT24CSW010-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	1 mA	128 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel			128X8	128	-40 Cel	TIN SILVER COPPER	1010DDDR		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B4		3.6 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	1024 bit	1.7 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	8	e1			.0000008 Amp			1.8
DS28E05X+T	Analog Devices	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		112 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			112X8	112	-40 Cel				BOTTOM			S-PBGA-B4		3.63 V	.37 mm			.908 mm			1-WIRE	896 bit	1.71 V				NOT SPECIFIED	NOT SPECIFIED		.908 mm
CAS24LS128C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			16KX8	16K	-40 Cel	TIN SILVER COPPER			BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.84 mm		5 ms	I2C	131072 bit	1.6 V			e1				.84 mm
NV24C64C4UX4TG	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	105 Cel			8KX8	8K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.35 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.77 mm
N24S64C4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM			S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ			NOT SPECIFIED	260		.77 mm
N24S128C4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel	TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.84 mm		5 ms	I2C	131072 bit	1.7 V			e1	30	260		.84 mm
N24C64A4DXTG	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	2.5			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.35 mm	85 Cel			64KX1	64K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.38 mm		1 MHz	.77 mm		4 ms	I2C	65536 bit	1.7 V							.77 mm
CAT24C16C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel			16KX1	16K	-40 Cel		1010MMMR		BOTTOM			R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C04C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			32X16	32	-40 Cel	MATTE TIN			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e3				.856 mm
CAT24C16C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V			e4				.856 mm
CAT24C64AC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM			S-PBGA-B4		5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	65536 bit	1.7 V							.76 mm
LE24L042CS-B	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			512X8	512	-40 Cel				BOTTOM			R-PBGA-B4		3.6 V	.5 mm		.4 MHz	.79 mm		10 ms	I2C	4096 bit	1.7 V							1.06 mm
CAT24C08C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			64X16	64	-40 Cel	MATTE TIN			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V			e3				.856 mm
CAT24C08C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel			8KX1	8K	-40 Cel		10100MMR		BOTTOM			R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	8192 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C64BC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	65536 bit	1.7 V			e2				.76 mm
CAV24C64C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	125 Cel	NO		8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010XXXR		BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.76 mm		5 ms	I2C	65536 bit	2.5 V	LEGTH-0.76 MM		e2	30	260	.000005 Amp	.77 mm	.0035 ns	5
CAT24C04C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			32X16	32	-40 Cel	NICKEL PALLADIUM GOLD			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e4				.856 mm
CAV24C08C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)			BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V			e1	30	260		.86 mm
CAV24C08C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)			BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V			e1	30	260		.86 mm
CAT24C32BAC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel	TIN SILVER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	32768 bit	1.7 V			e2	30	260		.76 mm
CAT24C04C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			32X16	32	-40 Cel	MATTE TIN			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V			e3				.856 mm
CAT24C16C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V			e3				.856 mm
CAT24C08C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.8 V			e4				.856 mm
CAT24C64C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010000R		BOTTOM		HARDWARE	S-PBGA-B4	1	5.5 V	.3 mm	1000000 Write/Erase Cycles	1 MHz	.76 mm		5 ms	I2C	65536 bit	2.5 V	ALSO AVAILABLE 1.7-5.5V OPERATES WITH 0.1MHZ, 1.7-5.5V OPERATES WITH 0.4MHZ		e2	30	260	.000003 Amp	.76 mm
CAV24C04C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4096 words	3.6			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			4KX1	4K	-40 Cel	TIN SILVER COPPER			BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	4096 bit	2.5 V			e1	30	260		.86 mm
CAT24C08C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			BOTTOM			R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V			e4				.856 mm
CAT24C16C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel			16KX1	16K	-40 Cel	TIN SILVER COPPER	1010MMMR		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.