DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC02PEREV-E	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT28LV64HP-35	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE				2.54 mm	70 Cel	8KX8	8K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V			e0				36.703 mm	350 ns	3
CAT24WC02PAREV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24C64LI-T3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE			100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT24WC04GL-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	512X8	512	0 Cel			1010DDMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT28C256PI-30	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE		e0				36.695 mm	300 ns	5
CAT24C01BPE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT25160LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4		260	.000002 Amp	9.27 mm
CAT25010LI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				2.54 mm	85 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e3				9.36 mm
CAT24WC129LI-3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		3.3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	16KX8	16K	-40 Cel		MATTE TIN	1010XXXR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	I2C	131072 bit	3 V			e3			.000001 Amp	9.59 mm
CAT24WC02LAREV-E	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25010L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				2.54 mm	70 Cel	128X8	128	0 Cel		MATTE TIN		DUAL		R-PDIP-T8		6 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e3				9.36 mm
CAT28C256LA-12T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	105 Cel	32KX8	32K	-40 Cel				DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V							37.4 mm	120 ns	5
CAT24C01BGLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel				DUAL		R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.00001 Amp
CAT24WC01GLA-1.8REV-E	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24C01BPA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V			e0			.000001 Amp	9.59 mm
CAT24FC64PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e0			.000001 Amp	9.59 mm
CAT28LV256PI-30T	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	3 V			e0				36.695 mm	300 ns	3
CAT24WC66LE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	125 Cel	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	2.5 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT25C05GLA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	2.5			8	IN-LINE				2.54 mm	105 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V			e4				9.59 mm
CAT28C512PI-15	Onsemi	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs	100	2.54 mm	85 Cel	64KX8	64K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	128	e0			.0002 Amp	42.03 mm	150 ns	5	YES
CAT24C01BGLE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel				DUAL		R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.00001 Amp
CAT28C256L-15T	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6		100	2.54 mm	70 Cel	32KX8	32K	0 Cel	NO			DUAL		R-PDIP-T28		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64				.00015 Amp	37.4 mm	150 ns	5	YES
CAT25C03PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	256X8	256	-40 Cel		TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e0				9.59 mm
CAT24FC65PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e0			.000001 Amp	9.59 mm
CAT24WC01PE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT28LV64P-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel	8KX8	8K	0 Cel	NO			DUAL		R-PDIP-T28	1	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	3 V		32				.0001 Amp	36.695 mm	200 ns	3	YES
CAT24WC66LIT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	85 Cel	8KX8	8K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	2.5 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT28LV256LA25	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel	32KX8	32K	-40 Cel	NO			DUAL		R-PDIP-T28		3.6 V		100000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit	3 V		64		NOT SPECIFIED	NOT SPECIFIED	.00015 Amp		250 ns	3	YES
CAT24WC08LAREV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT28C257P-90	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	70 Cel	32KX8	32K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				36.695 mm	90 ns	5
CAT24WC66LE-1.8T2	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	125 Cel	8KX8	8K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT25C05GLE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	2.5			8	IN-LINE				2.54 mm	125 Cel	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V			e4				9.59 mm
CAT24WC01LA-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C16LA-1.8G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	105 Cel	2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e4	40	260		9.59 mm
CAT24WC08P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	1KX8	1K	0 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25020LI-D	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	256X8	256	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3			.000002 Amp	9.27 mm
CAT25010LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				2.54 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e3				9.36 mm
CAT25C64LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					125 Cel	8KX8	8K	-40 Cel				DUAL		R-PDIP-T8		6 V			1 MHz			10 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED
CAT25010GLA-REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE					105 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4
CAT28C17AP-20T	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	70 Cel	2KX8	2K	0 Cel				DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm	Not Qualified	10 ms		16384 bit	4.5 V							37.4 mm	200 ns	5
CAT24WC16PIREV-D	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT25C16LI-1.8G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				2.54 mm	85 Cel	2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e4	40	260		9.59 mm
CAT25C11PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	128X8	128	-40 Cel		TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e0			.000001 Amp	9.59 mm
CAT24WC02GLREV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	256X8	256	0 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24C21LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel			1010XXXR	DUAL		R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	9.27 mm
CAT24FC256GLA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		4 mA	32768 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.00001 Amp
CAT25256LI-GT2	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e4				9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.