DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT25C03GLA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	105 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		6 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4				9.59 mm
CAT24WC128PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel		16KX8	16K	-40 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	131072 bit	1.8 V						.000001 Amp	9.59 mm		5
CAT28C65BL12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3			.0001 Amp	36.695 mm	120 ns	5	YES
CAT25040LITD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	3.6			8	IN-LINE		8		100	2.54 mm	85 Cel		128X8	128	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT24WC04GLA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC05L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		512X8	512	0 Cel		MATTE TIN	1010DDMR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V			e3			.0000009 Amp	9.59 mm
CAT25020P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD			DUAL		R-PDIP-T8		6 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e0				9.36 mm
CAT25010LE-D	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel		128X8	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN		e3			.000002 Amp	9.27 mm
CAT25010GL-REV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE						70 Cel		128X8	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4
CAT25020LI-REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE						85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3
CAT24C00PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	16 words	3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		16X8	16	-40 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8		5.5 V	4.57 mm	10000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	128 bit	1.8 V			e0			.000001 Amp	9.59 mm
CAT28C16AL-12T	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6			100	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO				DUAL		R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm		5 ms		16384 bit	4.5 V						.0001 Amp	31.875 mm	120 ns		YES
CAT24C01WIT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4				9.27 mm
CAT24FC256PA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	4 mA	32768 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e0			.00001 Amp	9.36 mm
CAT28C64BLI90	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN			DUAL		R-PDIP-T28		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3		260	.0001 Amp	36.695 mm	90 ns	5	YES
CAT24C01LE-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		128X16	128	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	9.27 mm
CAT25C65GL-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					2.54 mm	70 Cel		8KX8	8K	0 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4				9.59 mm
CAT25320LI-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE					2.54 mm	85 Cel		4KX8	4K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		10 MHz	7.62 mm		5 ms	SPI	32768 bit	1.8 V			e3				9.27 mm
CAT25C256LI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		10 mA	32768 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		32KX8	32K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		SPI	262144 bit							.000001 Amp
CAT28C64BFP-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE					2.54 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V			e0				36.703 mm	200 ns	5
CAT24WC08LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		1KX8	1K	-40 Cel			1010DMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT24WC02GLE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25320LE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE				100	2.54 mm	125 Cel		4KX8	4K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT28C257PA-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	105 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS	128	e0			.00015 Amp	36.695 mm	120 ns	5	YES
CAT24WC66LI-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e3			.000001 Amp	9.27 mm
CAT25C32LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE						125 Cel		4KX8	4K	-40 Cel					DUAL		R-PDIP-T8		6 V			3 MHz			10 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED
CAT25C64LE-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					2.54 mm	125 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.334 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4				9.271 mm
CAT24FC17LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel		2KX8	2K	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3			.00001 Amp	9.59 mm
CAT25040LI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		524288 words	5			8	IN-LINE					2.54 mm	85 Cel		512KX8	512K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.33 mm		10 MHz	7.62 mm	Not Qualified	5 ms	SPI	4194304 bit	2.5 V			e4				9.27 mm
CAT25C64LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE						125 Cel		8KX8	8K	-40 Cel					DUAL		R-PDIP-T8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED
CAT25C32GLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE						125 Cel		4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		6 V			3 MHz			10 ms	SPI	32768 bit	2.5 V			e4
CAT24WC01PREV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		128X8	128	0 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25010PE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE					2.54 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e0				9.36 mm
CAT25C03LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3				9.59 mm
CAT24WC02LI-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24FC02PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e0			.000001 Amp	9.59 mm
CAT24WC04L-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		512X8	512	0 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT28C64BP-12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO				DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32				.0001 Amp	36.695 mm	120 ns	5	YES
CAT25040PI-REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE						85 Cel		512X8	512	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V			e0
CAT24WC128L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	IN-LINE	DIP8,.3			100	2.54 mm	70 Cel		16KX8	16K	0 Cel			1010XXXR		DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm		10 ms	I2C	131072 bit	2.5 V						.000001 Amp	9.59 mm		5
CAT28C257LI-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		128	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT24WC02LAREV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25160LI-T3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5			1	IN-LINE					2.54 mm	85 Cel		16KX1	16K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e3				9.27 mm
CAT24WC04LA-1.8REV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25C33PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		4KX8	4K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V			e0				9.59 mm
CAT25640LI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				100	2.54 mm	85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDIP-T8		5.5 V	5.33 mm		20 MHz	7.62 mm		5 ms	SPI	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT28LV65L-20	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	3 V		32	e3			.0001 Amp	36.695 mm	200 ns	3	YES
CAT24WC02LA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.