TSOP1 EEPROM 1,212

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28LV256HT14-25TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0			12.4 mm	250 ns	3
CAT28LV256H13I-20T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	Tin (Sn)		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3		.00015 Amp	11.8 mm	200 ns	3	YES
CAT28C65BH13I-15TE7	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e3			11.8 mm	150 ns	5
CAT28LV64T14-25TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0			12.4 mm	250 ns	3
CAT28LV64TI-30TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0			18.4 mm	300 ns	3
CAT28C65BT13I-90T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e0		.0001 Amp	11.8 mm	90 ns	5	YES
CAT28LV65T13-15T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	3 V		32	e0		.0001 Amp	11.8 mm	150 ns	3	YES
CAT28C64BFTI-12TE7	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			18.4 mm	120 ns	5
CAT28LV256H13I-20	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	Tin (Sn)		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3		.00015 Amp	11.8 mm	200 ns	3	YES
CAT28C65BHFT14I-12TE7	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			12.4 mm	120 ns	5
CAT28LV256H13I-30T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	Tin (Sn)		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3		.00015 Amp	11.8 mm	300 ns	3	YES
CAT28C64BHT14-12TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			12.4 mm	120 ns	5
CAT28C64BFT14-12TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			12.4 mm	120 ns	5
CAT28C512T14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words	5			8	SMALL OUTLINE, THIN PROFILE				100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm			10 mm	Not Qualified	5 ms		524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0			12.4 mm	150 ns	5
CAT28LV64HI-25TE13	Onsemi	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-40 Cel		MATTE TIN		DUAL	R-PDSO-G32	2	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e3			18.4 mm	250 ns	3
CAT28C256HT14-20TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0			12.4 mm	200 ns	5
CAT28LV64T14-30TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0			12.4 mm	300 ns	3
CAT28C256FT13I-20TE13	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0			11.8 mm	200 ns	5
CAT28C64BH13I12T	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3	260	.0001 Amp	11.8 mm	120 ns	5	YES
CAT28C64BHT13-12TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			11.8 mm	120 ns	5
CAT28LV256T13-25	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28	2	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e0		.00015 Amp	11.8 mm	250 ns	3	YES
CAT28C64BHFT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			12.4 mm	200 ns	5
CAT28C65BH13-90	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN	YES	DUAL	R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3		.0001 Amp	11.8 mm	90 ns	5	YES
CAT28C65BHT14-20TE7	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			12.4 mm	200 ns	5
CAT28C64BH13-15T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		8KX8	8K	0 Cel	NO	Matte Tin (Sn)		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3		.0001 Amp	11.8 mm	150 ns	5	YES
CAT28C256T14-25TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0			12.4 mm	250 ns	5
CAT28LV256HT13-35T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			262144 bit	3 V			e0			11.8 mm	350 ns	3
CAT28C256T13-15T	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO			DUAL	R-PDSO-G28	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES	64			.00015 Amp	11.8 mm	150 ns	5	YES
CAT28LV64H13-25TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL	R-PDSO-G28	2	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e3			11.8 mm	250 ns	3
CAT28LV64HT-35TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	3.6 V	1.2 mm			8 mm	Not Qualified			65536 bit	3 V			e0			18.4 mm	350 ns	3
CAT28C65BHFT-12TE13	Onsemi	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8KX8	8K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	2A	5.5 V	1.2 mm			8 mm	Not Qualified			65536 bit	4.5 V			e0			18.4 mm	120 ns	5
CAT28C513T14A-15T	Onsemi	EEPROM	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		65536 words	5			8	SMALL OUTLINE, THIN PROFILE				100	.5 mm	105 Cel		64KX8	64K	-40 Cel		TIN LEAD		DUAL	R-PDSO-G40	2A	5.5 V	1.2 mm			10 mm	Not Qualified			524288 bit	4.5 V	10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0			12.4 mm	150 ns	5
CAT28C256HFT13-20TE13	Onsemi	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL	R-PDSO-G28	2	5.5 V	1.2 mm			8 mm	Not Qualified			262144 bit	4.5 V			e0			11.8 mm	200 ns	5
CAT28C65BT13I-90	Onsemi	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28	2	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e0		.0001 Amp	11.8 mm	90 ns	5	YES
CAT25010YIT	Onsemi	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	3.6			8	SMALL OUTLINE, THIN PROFILE		8		100	.65 mm	85 Cel		128X8	128	-40 Cel		MATTE TIN		DUAL	R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION		e3			4.4 mm
M28256-15WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0		.00002 Amp	11.8 mm	150 ns	3	YES
M28C64-12NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0		.0001 Amp	11.8 mm	120 ns	5	YES
M28256-15NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0		.0001 Amp	11.8 mm	150 ns	5	YES
M28010-15NA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS					18.4 mm	150 ns	5
M28C64-A12NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	1 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0		.0001 Amp	11.8 mm	120 ns	5	YES
M28010-12WNA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0		.00003 Amp	18.4 mm	120 ns	3	YES
M28256-12NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0		.0001 Amp	11.8 mm	120 ns	5	YES
M28010-10WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0		.00003 Amp	18.4 mm	100 ns	3	YES
M28010-15NA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0		.00005 Amp	18.4 mm	150 ns	5	YES
M28C64-30WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD	YES	DUAL	R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0		.00002 Amp	11.8 mm	300 ns	3	YES
M28256-25NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0		.0001 Amp	11.8 mm	250 ns	5	YES
M28256-90NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel				DUAL	R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		262144 bit	4.5 V						11.8 mm	90 ns	5
M28010-20WNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	3			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel				DUAL	R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS					18.4 mm	200 ns	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.