TSOP1 EEPROM 1,212

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58DVG02D5TA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	128MX8	128M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58DVM82A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	33554432 words	3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58DVM72A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			16777216 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	16MX8	16M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V			e0					18.4 mm		3
TC58NVM9S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	64MX8	64M	0 Cel	512	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58DVM82F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	32MX8	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V			e0					18.4 mm		3
TC58NVG2S0FTAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		4K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58NVG2S0FTA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	512MX8	512M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V								18.4 mm		3
TC58512FTI	Toshiba	EEPROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	64MX8	64M	-40 Cel	4K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V		512	e0			NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58128AFTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	16777216 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V		512	e0			NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58128AFT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	16MX8	16M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V								18.4 mm	35 ns	3
TC58DAM72A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel	8MX16	8M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V			e0					18.4 mm		3
TH58100FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	128MX8	128M	0 Cel	8K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58DAM82F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	32MX8	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V			e0					18.4 mm		3
TH58NVG1S3AFT05	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	256MX8	256M	0 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V		2K	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TH58NVG5S0FTAK0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	4GX8	4G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			34359738368 bit	2.7 V								18.4 mm		3
TC58NVG0S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	128MX8	128M	0 Cel	1K	YES	TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3		260	NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58DAM82A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	32MX8	32M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V			e0					18.4 mm		3
TC58DVM92A3TA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	64MX8	64M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V								18.4 mm		3
TC58DVM82A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	30 mA	33554432 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	32MX8	32M	0 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	35 ns	3	NO
TH58NVG3S0HTA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	1GX8	1G	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			8589934592 bit	2.7 V								18.4 mm		3
TC58256FTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	33554432 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	3 V		512	e0			NAND TYPE	.0001 Amp	18.4 mm	50 ns	3	NO
TH58NVG3S0HTAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	1GX8	1G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			8589934592 bit	2.7 V								18.4 mm		3
TC58NVG1S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	256MX8	256M	0 Cel	2K	YES	TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V		2K	e3		260	NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TH58NVG4S0FTAK0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	2GX8	2G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			17179869184 bit	2.7 V				30	260			18.4 mm		3
TH58100FTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	128MX8	128M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V			e0					18.4 mm		3
TC58DVM72F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel	8MX16	8M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V			e0					18.4 mm		3
TC58256AFTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	32MX8	32M	-40 Cel			TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V			e0					18.4 mm		3
TC58128FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel	16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58DVG02A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	128MX8	128M	-40 Cel	8K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		512				NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
HN58V66AT-10SR	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	8KX8	8K	-20 Cel		NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64					.000005 Amp	11.8 mm	100 ns	3	YES
HN58C257T-20	Renesas Electronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel	32KX8	32K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	4.5 V	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS		e0					12.4 mm	200 ns	5
HN58V65ATI-10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	8KX8	8K	-40 Cel		NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	11.8 mm	100 ns	3	YES
HN58V1001T-20	Renesas Electronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	128KX8	128K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	2.7 V			e0					12.4 mm	200 ns	3
HN58V66AT-10SRE	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	8KX8	8K	-20 Cel		NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	11.8 mm	100 ns	3	YES
R1EV58064BTCRBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	8KX8	8K	-40 Cel					DUAL	R-PDSO-G28	3	5.5 V	1.2 mm		8 mm		10 ms	65536 bit	2.7 V								11.8 mm	100 ns	3
HN58V66ATI-10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	8KX8	8K	-40 Cel		NO		YES	DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	11.8 mm	100 ns	3	YES
HN58S256ATI-15	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE				10	.55 mm	85 Cel	32KX8	32K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.2 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE		e0					11.8 mm	150 ns	3
HN58V256AT-15SR	Renesas Electronics	EEPROM	OTHER	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	32KX8	32K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0					11.8 mm	150 ns	3
HN58S65ATI-15	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	3			8	SMALL OUTLINE, THIN PROFILE				10	.55 mm	85 Cel	8KX8	8K	-40 Cel					DUAL	R-PDSO-G28		3.6 V	1.2 mm		8 mm	Not Qualified	15 ms	65536 bit	2.2 V	10 YEARS DATA RETENTION							11.8 mm	150 ns	3
HN58V257AT-15SR	Renesas Electronics	EEPROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	32KX8	32K	-20 Cel			TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0					12.4 mm	150 ns	3
R1EV58064BTCNBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8192 words	3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	8KX8	8K	-40 Cel					DUAL	R-PDSO-G28	3	5.5 V	1.2 mm		8 mm		10 ms	65536 bit	2.7 V								11.8 mm	100 ns	3
HN58V256AT-15	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel	32KX8	32K	0 Cel			TIN LEAD		DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0					11.8 mm	150 ns	3
HN58V257T-35	Renesas Electronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel	32KX8	32K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; WRITE PROTECTION; 64 BYTE PAGE WRITE		e0					12.4 mm	350 ns	3
HN58V256AT-12E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	32KX8	32K	0 Cel		NO			DUAL	R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	10 ms	262144 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED		.00002 Amp	11.8 mm	120 ns	3	YES
HN58V65ATI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	8KX8	8K	-40 Cel		NO		YES	DUAL	R-PDSO-G28	1	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	65536 bit	2.7 V		64					.000005 Amp	11.8 mm	100 ns	3	YES
HN85C256ATI10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	32KX8	32K	-40 Cel					DUAL	R-PDSO-G28		5.5 V	1.2 mm		8 mm		10 ms	262144 bit	4.5 V								11.8 mm	100 ns	5
R1EV58256BTDRBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	32KX8	32K	-40 Cel					DUAL	R-PDSO-G32	3	5.5 V	1.2 mm		8 mm		10 ms	262144 bit	2.7 V								12.4 mm	120 ns	3
HN58V257AT-15	Renesas Electronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	32KX8	32K	0 Cel			TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0					12.4 mm	150 ns	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.