TSOP1 EEPROM 1,212

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C64-15WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.00002 Amp	11.8 mm	150 ns	3	YES
M28256-15NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0				.0001 Amp	11.8 mm	150 ns	5	YES
M28256-25WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel						DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		262144 bit	2.7 V								11.8 mm	250 ns	3
M28C64-12NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	120 ns	5	YES
M28C64-15NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	150 ns	5	YES
M28C64-90NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	90 ns	5	YES
M28C64-15WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.00002 Amp	11.8 mm	150 ns	3	YES
M28010-25NA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel						DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS							18.4 mm	250 ns	5
M28256-15WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0				.00002 Amp	11.8 mm	150 ns	3	YES
M28256-20NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0				.0001 Amp	11.8 mm	200 ns	5	YES
M28C64-15NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	150 ns	5	YES
M28256-20NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0				.0001 Amp	11.8 mm	200 ns	5	YES
M28010-12NA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel		NO	TIN LEAD			DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0				.00005 Amp	18.4 mm	120 ns	5	YES
M28C64-90NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	90 ns	5	YES
M28010-15RNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	2			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel						DUAL		R-PDSO-G32		2.4 V	1.2 mm			8 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS							18.4 mm	150 ns	3
M28C64-12NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	120 ns	5	YES
M28010-25RNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		12 mA	131072 words	2	YES	1.8/2.4	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G32		2.4 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e0				.00003 Amp	18.4 mm	250 ns	3	YES
M28010-25WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		26 mA	131072 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0				.00003 Amp	18.4 mm	250 ns	3	YES
M28010-12RNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			131072 words	2			8	SMALL OUTLINE, THIN PROFILE				10	.5 mm	70 Cel		128KX8	128K	0 Cel						DUAL		R-PDSO-G32		2.4 V	1.2 mm			8 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS							18.4 mm	120 ns	3
M28010-25WNA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		26 mA	131072 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0				.00003 Amp	18.4 mm	250 ns	3	YES
M28256-12WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		15 mA	32768 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0				.00002 Amp	11.8 mm	120 ns	3	YES
M28010-25NA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel		NO	TIN LEAD			DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0				.00005 Amp	18.4 mm	250 ns	5	YES
M28C64-12NS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	8192 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.0001 Amp	11.8 mm	120 ns	5	YES
M28256-25WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			32768 words	3			8	SMALL OUTLINE, THIN PROFILE					.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel						DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		262144 bit	2.7 V								11.8 mm	250 ns	3
M28C64-15WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		10 mA	8192 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0				.00002 Amp	11.8 mm	150 ns	3	YES
M24128-BWDW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	16384 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		16KX8	16K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e4				.000005 Amp	4.4 mm
M24128-BRDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		16KX8	16K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4				.000001 Amp	4.4 mm
M95256-WDW6TP\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	32768 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.4 mm
M95256-WDW3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		6 mA	32768 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.4 mm
M24128-BWDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	16384 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		16KX8	16K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e4				.000002 Amp	4.4 mm
M95256-RDW6P\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.4 mm
M24128-BRDW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2.5 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		16KX8	16K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4				.000001 Amp	4.4 mm
M95256-WDW3P/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		6 mA	32768 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.4 mm
M95256-WDW6P\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		5 mA	32768 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.4 mm
M95256-DRDW6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.4 mm
M95256-DRDW6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e4				.000003 Amp	4.4 mm
M95256-RDW6TP\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-40 Cel						DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.4 mm
TC58DAM72F1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		8MX16	8M	0 Cel			TIN LEAD			DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V			e0					18.4 mm		3
TC58DVG02D5TAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TC58512FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58256AFT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32MX8	32M	0 Cel						DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V								18.4 mm		3
TC58NVG2S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		512MX8	512M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
TH58512FT	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	16K	30 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO
TC58DVM92A1FTI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58DVM92A1FT00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	30 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512				NAND TYPE	.00005 Amp	18.4 mm	35 ns	3	NO
TC58NVG0S3AFT05	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	1K	YES	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			1073741824 bit	2.7 V		2K	e0			NAND TYPE	.00005 Amp	18.4 mm	45 ns	3	NO
TC58128FTI	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	16K	30 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	3 V		512				NAND TYPE	.0001 Amp	18.4 mm	45 ns	3	NO
TC58NVM9S3ETAI0	Toshiba	EEPROM	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	512	YES			YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		2K				NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.