VFBGA EEPROM 1,420

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
CAT24C32BAC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel	TIN SILVER		BOTTOM		S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	32768 bit	1.7 V		e2	30	260		.76 mm
CAT24C04C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			32X16	32	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V		e3				.856 mm
CAT24C16LI	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	64 words	5	2/5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	DIP8,.3	EEPROMs	100	.3 mm	125 Cel			64X16	64	-40 Cel	TIN	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B5		5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.832 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e3		260	.000001 Amp	.856 mm
CAT24C16C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V		e3				.856 mm
CAT24C08C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.8 V		e4				.856 mm
LE2416RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V		e1	30	260		1.2 mm
CAT25M02C8ATR	Onsemi	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel			256KX8	256K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B8	1	5.5 V	.58 mm		10 MHz	2.04 mm		6 ms	I2C	2097152 bit	2.5 V	ALSO AVAILABLE 1.7-5.5V OPERATES WITH 5MHZ	e1	30	260		3.12 mm
CAT24C64C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010000R	BOTTOM	HARDWARE	S-PBGA-B4	1	5.5 V	.3 mm	1000000 Write/Erase Cycles	1 MHz	.76 mm		5 ms	I2C	65536 bit	2.5 V	ALSO AVAILABLE 1.7-5.5V OPERATES WITH 0.1MHZ, 1.7-5.5V OPERATES WITH 0.4MHZ	e2	30	260	.000003 Amp	.76 mm
CAV24C04C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		4096 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			4KX1	4K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	4096 bit	2.5 V		e1	30	260		.86 mm
CAT24C08C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V		e4				.856 mm
LE24163LBXA-SH	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B5	1	3.6 V	.33 mm		.4 MHz	.8 mm		5 ms		16384 bit	1.7 V	FOR WRITE OPERATION-1.8V TO 3.6V SUPPLY	e1	30	260		1.2 mm		3
CAV24C32C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			4KX8	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.91 mm		5 ms	I2C	32768 bit	2.5 V		e1				1.34 mm
CAT24C08C5AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel			64X16	64	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.8 V		e3				.856 mm
LE2464RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V		e1	30	260		1.2 mm
CAT24C16C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16	EEPROMs	100	.4 mm	85 Cel			16KX1	16K	-40 Cel	TIN SILVER COPPER	1010MMMR	BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e1	30	260	.000001 Amp	.86 mm
CAT24S128C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ	e1	30	260		.85 mm
CAT25512C8ATR	Onsemi	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			64KX8	64K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.6 mm		5 MHz	1.36 mm		5 ms	SPI	524288 bit	1.8 V						1.99 mm
CAV25256C8ATR	Onsemi	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.65 mm	125 Cel			32KX8	32K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.38 mm		10 MHz	1.55 mm		5 ms	SPI	262144 bit	2.5 V						2.9 mm
LE2432RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	32768 bit	1.7 V		e1	30	260		1.2 mm
CAT24C08LI	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	32 words	5	2/5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	DIP8,.3	EEPROMs	100	.3 mm	125 Cel			32X16	32	-40 Cel	TIN	1010DMMR	BOTTOM	HARDWARE	R-PBGA-B5		5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.832 mm	Not Qualified	5 ms	I2C	512 bit	1.8 V		e3		260	.000001 Amp	.856 mm
CAT24C64BAC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER		BOTTOM		S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	65536 bit	1.7 V		e2	30	260		.76 mm
CAV24C08C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel			8KX1	8K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ					.86 mm
CAV24C512C8ATR	Onsemi	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	125 Cel			64KX8	64K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B8		5.5 V	.6 mm		1 MHz	1.39 mm		5 ms	I2C	524288 bit	2.5 V		e1				1.65 mm
LE24162LBXA-SH	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	2048 words	2.5	1.8/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,16	EEPROMs	20	.4 mm	85 Cel			2KX8	2K	-40 Cel	TIN SILVER COPPER	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B6	1	3.6 V	.33 mm	100000 Write/Erase Cycles	.4 MHz	.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e1	30	260	.000002 Amp	1.2 mm
LE2464CXBTBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel			BOTTOM		R-PBGA-B6		3.6 V	.3 mm		.4 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V						1.2 mm
CAT24C08C5AE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V		e4				.856 mm
CAT24C08C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,10/6	EEPROMs	100	.3 mm	85 Cel			8KX1	8K	-40 Cel	TIN SILVER COPPER	10100MMR	BOTTOM	HARDWARE	R-PBGA-B5	1	5.5 V	.39 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e1	30	260	.000001 Amp	.86 mm
CAT24C16C5AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V		e3				.856 mm
LE2432DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	32768 bit	1.7 V		e1	30	260		1.2 mm
CAV25512C8ATR	Onsemi	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	125 Cel			64KX8	64K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B8		5.5 V	.6 mm		10 MHz	1.36 mm		5 ms	SPI	524288 bit	2.5 V		e1				1.99 mm
CAT24C32C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel	Tin/Silver (Sn/Ag)		BOTTOM		S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	1.7 V		e2	30	260		.76 mm
LE2464CXCTBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel			BOTTOM		R-PBGA-B6		3.6 V	.45 mm		.4 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		1.2 mm
CAV24C04C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.3 mm	125 Cel			4KX1	4K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	4096 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ					.86 mm
CAV25M01C8ATR	Onsemi	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		131072 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	125 Cel			128KX8	128K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.5 mm		10 MHz	1.95 mm		5 ms	SPI	1048576 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		2.24 mm
LE24162LBXA	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel			BOTTOM		R-PBGA-B6		3.6 V	.33 mm		.4 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V						1.2 mm
CAT24C08C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	85 Cel			8KX1	8K	-40 Cel		10100MMR	BOTTOM		R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	8192 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C64BC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER		BOTTOM		S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	65536 bit	1.7 V		e2				.76 mm
CAV24C64C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		100	.4 mm	125 Cel	NO		8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010XXXR	BOTTOM		S-PBGA-B4	1	5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.76 mm		5 ms	I2C	65536 bit	2.5 V	LEGTH-0.76 MM	e2	30	260	.000005 Amp	.77 mm	.0035 ns	5
M95256RCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	32 words		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.5 mm	85 Cel			32X8	32	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8		5.5 V	.65 mm	1000000 Write/Erase Cycles	5 MHz	1.785 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	1.97 mm	80 ns
M24C32-XCU5P/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-XCU5TG/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M95512-WCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel			64KX8	64K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.58 mm		10 MHz	1.271 mm			SPI	524288 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		1.937 mm
M24C64-RCT6G/PF	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.33 mm		.4 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C32-RCU5TG/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-WCS6TG/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.7		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			4KX8	4K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C32-RCS3P/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	125 Cel			4KX8	4K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M95512-DRCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel			64KX8	64K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.58 mm		5 MHz	1.271 mm			SPI	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.937 mm
M24C32-RCS3TG/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	125 Cel			4KX8	4K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.