VFBGA EEPROM 1,420

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24C32-RCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V					.795 mm
M95M01-DFCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		131072 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.335 mm		16 MHz	1.716 mm		5 ms	SPI	1048576 bit	1.7 V					2.578 mm
M24256-DFCT6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		32768 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.58 mm		1 MHz	1.271 mm		5 ms	I2C	262144 bit	1.7 V					1.358 mm
M24C32-WCU5TG/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V					.795 mm
M24C32-DFCU6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V					.795 mm
M24C64-FCU6TP/12F	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V					.795 mm
M24C32-RCU5G/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V					.795 mm
M24C64-DFCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32-RCU6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V					.795 mm
M95128-DRCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8	1		200	.693 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	5.5 V	.58 mm	4000000 Write/Erase Cycles	20 MHz	1.081 mm		5 ms	SPI	131072 bit	4.5 V	ALSO OPERATES WITH 2.5V @10 MHZ AND 1.8V MIN @ 5 MHZ			.000001 Amp	1.271 mm
M24C08-WCT6TP/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.33 mm		.4 MHz	.685 mm		5 ms	I2C	8192 bit	2.5 V					.695 mm
M24C32-WCS6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4096 words	2.7		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24M02-DRCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		256KX8	256K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.58 mm		1 MHz	2.011 mm		10 ms	I2C	2097152 bit	1.8 V					3.556 mm
M24128T-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		16KX8	16K	-40 Cel		BOTTOM		S-PBGA-B4	5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V					.833 mm
M24C64X-FCP6/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.25 mm		1 MHz	.711 mm		5 ms	I2C	65536 bit	1.7 V					.731 mm
M24C64-DFCU6P/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-FCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,14/8		EEPROMs	40	.2 mm	85 Cel		8KX8	8K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B5	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	.959 mm	Not Qualified		I2C	65536 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.073 mm
M24C32M-FCU6/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24512-WCS3P/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10			40		125 Cel		64KX8	64K	-40 Cel	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B8	5.5 V	.67 mm	1000000 Write/Erase Cycles	1 MHz	1.433 mm		5 ms	I2C	524288 bit	2.5 V	ALSO AVAILABLE IN WLCSP(KB DLE)8 PACKAGE			.000005 Amp	1.901 mm		5
M24C32-RCU6P/PF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V					.795 mm
M24512-DFCS3G/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		65536 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						125 Cel		64KX8	64K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.67 mm		.4 MHz	1.433 mm		5 ms		524288 bit	1.7 V	ALSO AVAILABLE IN WLCSP(KB DLE)8 PACKAGE				1.901 mm		5
M24128-BFCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	16384 words	5	1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,14/8		EEPROMs	200	.4 mm	85 Cel		16KX8	16K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	5.5 V	.58 mm	4000000 Write/Erase Cycles	1 MHz	1.099 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.289 mm
M24C16-FCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.346 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	1.7 V					1.255 mm
M24C64-RCU6G/P	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-RCU6TG/12	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V					.795 mm
M24C32T-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	4096 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		S-PBGA-B4	5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V					.833 mm
M24C32-WCU6G/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V					.795 mm
M24C32-FCU6G/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V					.795 mm
M24512-WCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5	3/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10		EEPROMs	200	.2 mm	85 Cel		64KX8	64K	-40 Cel	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	5.5 V	.58 mm	4000000 Write/Erase Cycles	1 MHz	1.271 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	1.937 mm
M95256-RCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	32768 words		2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10		EEPROMs	40	.4 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	5.5 V	.58 mm	1000000 Write/Erase Cycles	20 MHz	1.271 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V				.000003 Amp	1.358 mm
M24C64-RCU6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64-RCS6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C08-WCT6P	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.346 mm	85 Cel		1KX8	1K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.33 mm		.4 MHz	1.025 mm		5 ms	I2C	8192 bit	2.5 V					1.215 mm
M24M01-DFCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		131072 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.58 mm		1 MHz	1.698 mm		5 ms	I2C	1048576 bit	1.7 V					2.56 mm
M95256-WCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.58 mm		20 MHz	1.271 mm		5 ms	SPI	262144 bit	2.5 V					1.358 mm
M24512-DWCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10			40	.4 mm	85 Cel		64KX8	64K	-40 Cel	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B8	5.5 V	.67 mm	1000000 Write/Erase Cycles	1 MHz	1.901 mm		5 ms	I2C	524288 bit	2.5 V				.000005 Amp	1.433 mm		5
M24C32-XCU5TG/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		.4 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V					.795 mm
M24C64-FCS6TG/TF	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		.4 MHz	.959 mm		5 ms	I2C	65536 bit	1.6 V	IT ALSO OPERATES AT 0 TO 85 TEMP AT WRITE OPERATION	NOT SPECIFIED	NOT SPECIFIED		1.073 mm
M24C64-WCS6TP/12	STMicroelectronics	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B5	5.5 V	.645 mm		1 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V					1.073 mm
M24128-BRCS3TP/P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	125 Cel		16KX8	16K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C32-RCU5P/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel		BOTTOM		R-PBGA-B4	5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V					.795 mm
M24C64-WCU6G/KF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B4	5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		.795 mm
M95160-RCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X3,16		EEPROMs	40	.4 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	1.35 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	1.365 mm
M95256-DWCS3G/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		32 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	125 Cel		32X8	32	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.65 mm		5 MHz	1.785 mm		5 ms	SPI	256 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.97 mm	60 ns
M24512-WCS3P/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X5,17/10			40		125 Cel		64KX8	64K	-40 Cel	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B8	5.5 V	.67 mm	1000000 Write/Erase Cycles	1 MHz	1.433 mm		5 ms	I2C	524288 bit	2.5 V	ALSO AVAILABLE IN WLCSP(KB DLE)8 PACKAGE			.000005 Amp	1.901 mm		5
M95160-CS6TP/G	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		2KX8	2K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.6 mm		10 MHz	1.35 mm		5 ms	SPI	16384 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED		1.365 mm
M24128-BWCS3TP/P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	125 Cel		16KX8	16K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C64-WCT6P/PF	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2.5 mA	8192 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		8KX8	8K	-40 Cel		BOTTOM		R-PBGA-B8	5.5 V	.33 mm		.4 MHz	.959 mm		5 ms	I2C	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		1.073 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.