VFBGA EEPROM 1,420

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
DS28E01X-100-S	Analog Devices	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD		BOTTOM		R-PBGA-B6		5.25 V	.67 mm			1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e0				1.98 mm
DS28E05X+T	Analog Devices	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		112 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	112X8	112	-40 Cel			BOTTOM		S-PBGA-B4		3.63 V	.37 mm			.908 mm			1-WIRE	896 bit	1.71 V				NOT SPECIFIED	NOT SPECIFIED		.908 mm
CAS24LS128C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.84 mm		5 ms	I2C	131072 bit	1.6 V			e1				.84 mm
NV24C64C4UX4TG	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	105 Cel	8KX8	8K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.35 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.77 mm
N24S64C4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM		S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ			NOT SPECIFIED	260		.77 mm
N24S128C4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.84 mm		5 ms	I2C	131072 bit	1.7 V			e1	30	260		.84 mm
CAT93C86BC6ATR	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.4 mm	85 Cel	1KX16	1K	-40 Cel			BOTTOM		R-PBGA-B6		5.5 V	.41 mm		4 MHz	.96 mm			MICROWIRE	16384 bit	1.8 V							1.17 mm
N24C64A4DXTG	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	2.5		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.35 mm	85 Cel	64KX1	64K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.38 mm		1 MHz	.77 mm		4 ms	I2C	65536 bit	1.7 V							.77 mm
EA2M-SWC8A1G	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel	256KX8	256K	0 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B8	1	3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	I2C	2097152 bit	1.6 V			e1	30	260		3.12 mm
NV24C256C6PTG	Onsemi	EEPROM		6	VFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,14			100	.35 mm	105 Cel	32KX8	32K	-40 Cel		1010D00R	BOTTOM	HARDWARE	R-XBGA-B6		5.5 V	.35 mm	1000000 Write/Erase Cycles	1 MHz	.976 mm		5 ms	I2C	262144 bit	1.7 V		64				.000002 Amp	1.106 mm	5
N24C256C6DYT3G	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.35 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B6	1	5.5 V	.3 mm		1 MHz	.96 mm		5 ms	I2C	262144 bit	1.7 V			e3	30	260		1.09 mm
CAT24C16C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16			100	.4 mm	85 Cel	16KX1	16K	-40 Cel		1010MMMR	BOTTOM		R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C08C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	64X16	64	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.8 V			e3				.856 mm
CAT24C16C4AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V			e3				.856 mm
LE2416RLBXA	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	2KX8	2K	-40 Cel			BOTTOM		R-PBGA-B6		3.6 V	.33 mm		.4 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V							1.2 mm
CAT24S128C4XTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	16KX8	16K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ						.85 mm
CAT24C04C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V			e4				.856 mm
CAT24C04C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16			100	.4 mm	85 Cel	4KX1	4K	-40 Cel		1010000R	BOTTOM		R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm		5 ms	I2C	4096 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C08C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		EEPROMs	100	.4 mm	85 Cel	8KX1	8K	-40 Cel	TIN SILVER COPPER	10100MMR	BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e1	30	260	.000001 Amp	.86 mm
LE2416DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	2KX8	2K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
CAT24C16C5AE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V			e4				.856 mm
CAT25AM02C8CTR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel	256KX16	256K	0 Cel	TIN SILVER		BOTTOM		R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
CAT24C16C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V			e4				.856 mm
CAT24C32BC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	4KX8	4K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.35 mm		1 MHz	.76 mm		4 ms	I2C	32768 bit	1.7 V							.76 mm
CAV24C16C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16384 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	16KX1	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	16384 bit	2.5 V			e1	30	260		.86 mm
CAT24C04C5AE-GT3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel	32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e4				.856 mm
CAT24S128C4UTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	16KX8	16K	-40 Cel	TIN SILVER COPPER		BOTTOM		S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.85 mm		5 ms	I2C	131072 bit	2.5 V	ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ, 1.7-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
CAT24C16C5AE-T3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.7 V			e3				.856 mm
CAT24C04C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	32X16	32	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e3				.856 mm
CAT24C16C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V			e4				.856 mm
CAV24C16C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	125 Cel	16KX1	16K	-40 Cel			BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	16384 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ						.86 mm
CAV24C32C5CTR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	4KX8	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B5	1	5.5 V	.35 mm		.4 MHz	.91 mm		5 ms	I2C	32768 bit	2.5 V			e1	30	260		1.34 mm
CAT24C04C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3	1.8/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA5,3X3,10/6		EEPROMs	100	.3 mm	85 Cel	4KX1	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	1010000R	BOTTOM	HARDWARE	R-PBGA-B5	1	5.5 V	.39 mm	1000000 Write/Erase Cycles	.4 MHz	.84 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			e1	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	.86 mm
CAT24C64AC4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	8KX8	8K	-40 Cel			BOTTOM		S-PBGA-B4		5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	65536 bit	1.7 V							.76 mm
NV25M01A8UXTG	Onsemi	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		131072 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	105 Cel	128KX8	128K	-40 Cel			BOTTOM		R-PBGA-B8		5.5 V	.39 mm		5 MHz	1.95 mm		5 ms	SPI	1048576 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		2.24 mm
LE24L042CS-B	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	512X8	512	-40 Cel			BOTTOM		R-PBGA-B4		3.6 V	.5 mm		.4 MHz	.79 mm		10 ms	I2C	4096 bit	1.7 V							1.06 mm
CAT24C32C5CTR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	4KX8	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B5	1	5.5 V	.35 mm		1 MHz	.91 mm		5 ms	I2C	32768 bit	2.5 V	ALSO AVAILABLE 1.7-5.5V WITH 0.1MHZ WITH 0.4MHZ FOR -40 TO 125 AND -40 TO 85 DEG CEL		e1	30	260		1.34 mm
CAT24C08C5AE-T3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel	64X16	64	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V			e3				.856 mm
CAT24C04C5AI-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	125 Cel	32X16	32	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.8 V			e3				.856 mm
CAT24C08C4AE-T3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		64 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	64X16	64	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	1024 bit	1.7 V			e3				.856 mm
CAT25AM02C8ATR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words	2.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel	256KX16	256K	0 Cel	TIN SILVER		BOTTOM		R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
CAT24C512C8ATR	Onsemi	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		65536 words	3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel	64KX8	64K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B8	1	5.5 V	.6 mm		.4 MHz	1.39 mm		5 ms	I2C	524288 bit	1.8 V			e1	30	260		1.65 mm
CAT24C32C5ATR	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	3.3	1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			EEPROMs		.4 mm	85 Cel	4KX8	4K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B5	1	5.5 V	.35 mm		1 MHz	.91 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	ALSO AVAILABLE 1.7-5.5V WITH 0.1MHZ WITH 0.4MHZ FOR -40 TO 125 AND -40 TO 85 DEG CEL		e1	30	260		1.34 mm
LE2464DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	8KX8	8K	-40 Cel	TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
CAT24C04C4AE-GT3	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel	32X16	32	-40 Cel	NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e4				.856 mm
CAT24C04C5AE-T3	Onsemi	EEPROM	INDUSTRIAL	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	85 Cel	32X16	32	-40 Cel	MATTE TIN		BOTTOM		R-PBGA-B5		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	512 bit	1.7 V			e3				.856 mm
CAV24C08C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V			e1	30	260		.86 mm
CAV24C08C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V			e1	30	260		.86 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.