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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
24LC128T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V		e3	40	260		.000005 Amp	3 mm		4.5
25LC640A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V		e3	40	260		.000001 Amp	3 mm		5
93LC56B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260		.000001 Amp	3 mm
25AA320A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 1.8V MIN @ 3 MHZ	e3	40	260		.000005 Amp	3 mm		5
AT17LV002A-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		EEPROMs	90	1.27 mm	85 Cel			2MX1	2M	-40 Cel	MATTE TIN		YES	QUAD		HARDWARE	S-PQCC-J20		3.6 V	4.572 mm	100000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V	ALSO OPERATES AT 5V SUPPLY	e3				.00035 Amp	8.9662 mm
24AA64T-I/MSG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e3	40	260		.000001 Amp	3 mm
24FC256T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V		e3		260		.000005 Amp	3 mm		2.5
24FC01-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel			128X8	128	-40 Cel		1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	3 mm		2.5
XC18V04VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel			512KX8	512K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
24FC128-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e3	40	260		.000005 Amp	3 mm		2.5
25AA010A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		3-STATE	128X8	128	-40 Cel	MATTE TIN			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	ALSO OPERATES AT 2.5V TO 4.5V @5MHZ AND 1.8V TO 2.5V @3MHZ	e3		260		.000001 Amp	3 mm		5
DS28CN01U-A00+	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	256 words		2		1.8/5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel			256X4	256	-40 Cel	MATTE TIN			DUAL			S-PDSO-G8	1	5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified			1024 bit	1.62 V		e3	30	260		.0000055 Amp	3 mm		3
XC18V04VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE					.8 mm	85 Cel			512KX8	512K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified			4194304 bit	3 V		e0					10 mm	20 ns
24FC64-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ	e3				.000001 Amp	3 mm		4.5
24LC04BT-I/MS	Microchip Technology	EEPROM		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e3	40	260		.000001 Amp	3 mm		5
N24S64BC4DYT3G	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel	TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.3 mm		1 MHz	.77 mm		5 ms	I2C	65536 bit	1.7 V	IT ALSO OPERATES AT 0.4MHZ	e1	30	260			.77 mm
24FC64T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ	e3				.000001 Amp	3 mm		4.5
DS28E15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words		3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	512 bit	2.97 V		e3	30	260			3 mm
XC1704LPC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	4194304 words	COMMON	3.3		3.3	1	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel		3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)			QUAD			S-PQCC-J44	3	3.6 V	4.572 mm		15 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	16.5862 mm
11AA020-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3	40	260		.000005 Amp	3 mm
11AA020T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel	MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V		e3	40	260		.000005 Amp	3 mm
24FC64F-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e3	40	260		.000001 Amp	3 mm		5
24FC01T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel			128X8	128	-40 Cel		1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	3 mm		2.5
24AA128-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e3		260		.000005 Amp	3 mm		2.5
24AA128T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V		e3		260		.000005 Amp	3 mm		2.5
25LC010AT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		3-STATE	128X8	128	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	ALSO OPERATES AT 2.5V TO 4.5V @5MHZ	e3	40	260		.000005 Amp	3 mm		5
93LC56BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260		.000005 Amp	3 mm
DS2433G+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	2	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		5		3/5	1	CHIP CARRIER	SURF MNT 2,.25SQ		EEPROMs			85 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD			QUAD			S-XQCC-N2		6 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e4					6 mm
24AA16T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel	Matte Tin (Sn)	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260		.000001 Amp	3 mm		2.5
24CS512-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		1010DDDR		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3.4 MHz	3 mm		5 ms	I2C	524288 bit	2.5 V						.000003 Amp	3 mm
24FC01-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	125 Cel			128X8	128	-40 Cel		1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000003 Amp	3 mm		2.5
24LC08B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	Matte Tin (Sn)	1010XMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		e3	40	260		.000001 Amp	3 mm		5
25LC020AT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e3	40	260		.000005 Amp	3 mm		5
93LC56BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V		e3	40	260		.000001 Amp	3 mm
CAT24C64C4CTR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	8192 words		1.8		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		EEPROMs	100	.4 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Tin/Silver (Sn/Ag)	1010000R		BOTTOM		HARDWARE	S-PBGA-B4	1	5.5 V	.35 mm	1000000 Write/Erase Cycles	.4 MHz	.76 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e2	30	260		.000003 Amp	.76 mm
M95M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	131072 words				2/5	8	GRID ARRAY	BGA8,3X3,47/24		EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit							.000003 Amp
XC18V01VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel			128KX8	128K	-40 Cel	Matte Tin (Sn)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE					.8 mm	85 Cel			512KX8	512K	-40 Cel	TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified			4194304 bit	3 V		e0					10 mm	20 ns
24AA02T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260		.000001 Amp	3 mm		2.5
24C02CT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	1.5 ms	I2C	2048 bit	4.5 V		e3	40	260		.000005 Amp	3 mm		5
24CS512T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3.4 MHz	3 mm		5 ms	I2C	524288 bit	2.5 V		e3				.000003 Amp	3 mm
24LC64T-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED	e3	40	260		.000005 Amp	3 mm		4.5
25AA020A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		e3	40	260		.000001 Amp	3 mm		2.5
25LC020AT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e3	40	260		.000001 Amp	3 mm		5
93LC66C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3	YES	3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	8	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	Matte Tin (Sn)		YES	DUAL		SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V	ALSO CONFIGURABLE AS 512 X 8	e3	40	260		.000001 Amp	3 mm
AT17LV002-10JU	Microchip Technology	EEPROM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3		3.3/5	1	CHIP CARRIER	LDCC20,.4SQ		EEPROMs	90	1.27 mm	85 Cel			2MX1	2M	-40 Cel	MATTE TIN			QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm	100000 Write/Erase Cycles	10 MHz	8.9662 mm	Not Qualified			2097152 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e3				.00035 Amp	8.9662 mm
AT17LV512-10JC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	5 mA	524288 words		3.3		3.3	1	CHIP CARRIER	LDCC20,.4SQ		EEPROMs		1.27 mm	70 Cel			512KX1	512K	0 Cel	TIN LEAD			QUAD		HARDWARE	S-PQCC-J20	2	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			524288 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO	e0		225			8.9662 mm
CAV24C32C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words		3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel			4KX8	4K	-40 Cel	Tin/Silver (Sn/Ag)			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	2.5 V		e2	NOT SPECIFIED	NOT SPECIFIED			.76 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.