SQUARE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT93C57ZD4A-T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3	40	260		3 mm
CAT93C66ZD4A-1.8-T3E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C76ZD4E-1.8REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				125 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C86ZD4E-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e3
CAT93C86ZD4A-T2REVC	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V	.8 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				3 mm
CAT93C86ZD4I-T2REVC	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V	.8 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V		e3				3 mm
CAT93C66ZD4ET2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	.65 mm	125 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION	e3				3 mm
CAT93C76ZD4E-1.8TE13REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				125 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C86RD4A-TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				105 Cel	1KX16	1K	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e0
CAT93C66ZD4E-1.8-T2E	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C76ZD4A-REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				105 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	2.5 V		e3
CAT93C57ZD4A-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-XDSO-N8	1	5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e4				3 mm
CAT93C66ZD4I-1.8-GE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
LE25CB643TT-BH	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel	8KX8	8K	-40 Cel		DUAL		S-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	65536 bit	2.7 V						3 mm
CAT93C86RD4I-1.8REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				85 Cel	1KX16	1K	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0
CAT93C66RD4E-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				125 Cel	256X16	256	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e0
CAT93C57ZD4-1.8TE13REVE	Onsemi	EEPROM	COMMERCIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	70 Cel	128KX16	128K	0 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e3				3 mm
CAT93C57RD4A-TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	105 Cel	128KX16	128K	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V		e0				3 mm
CAT93C86ZD4I-G	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN	e3			.00001 Amp	3 mm
CAT93C57ZD4I-1.8T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3	40	260		3 mm
CAT93C76ZD4I-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C76ZD4E-REVA	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				125 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			1 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C57ZD4I-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C66ZD4I-1.8-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8		100	.65 mm	85 Cel	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION	e4				3 mm
CAT93C66ZD4E-1.8-GT2E	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C56ZD4E-1.8-GREVE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e4				3 mm
CAT93C57ZD4I-E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C76ZD4I-1.8REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				85 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	1.8 V		e3
CAT93C57ZD4E-GT3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		S-XDSO-N8	1	5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e4				3 mm
CAT93C66VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	100	.65 mm	125 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V		e3			.00001 Amp	3 mm
CAT93C57ZD4I-1.8-T3E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm	2.7
CAT93C56ZD4E-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C86ZD4I-TE13	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				85 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e3
CAT93C57ZD4I-TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel	128KX16	128K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V	.75 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V		e3				3 mm
CAT93C57ZD4A-1.8T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3	40	260		3 mm
CAT93C57ZD4I-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3	NOT SPECIFIED	260		3 mm
CAT93C86ZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel		DUAL		S-PDSO-G8		5.5 V			.5 MHz				MICROWIRE	16384 bit	1.8 V
CAT93C57ZD4A-T3E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5	3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel	128X16	128	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3			.00001 Amp	3 mm	2.7
CAT93C86ZD4A-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C86ZD4	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				70 Cel	1KX16	1K	0 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e3
CAT93C66ZD4I-1.8-T2E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel	256X16	256	-40 Cel	MATTE TIN	DUAL	SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C86ZD4E-1.8-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL	HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 1.8MIN	e3			.00001 Amp	3 mm
CAT93C86ZD4E-TE13REVC	Onsemi	EEPROM	AUTOMOTIVE	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				125 Cel	1KX16	1K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e3
CAT93C66RD4-1.8	Onsemi	EEPROM	COMMERCIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE		8				70 Cel	256X16	256	0 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			.25 MHz		Not Qualified		MICROWIRE	4096 bit	1.8 V		e0
CAT93C86RD4I-TE13REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				85 Cel	1KX16	1K	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			1 MHz		Not Qualified		MICROWIRE	16384 bit	2.5 V		e0
CAT93C76ZD4A-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8				105 Cel	512X16	512	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	5.5 V			3 MHz		Not Qualified		MICROWIRE	8192 bit	2.5 V		e3
CAT93C57ZD4I-1.8TE13REVE	Onsemi	EEPROM	INDUSTRIAL	8	VSON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		131072 words	3		16	SMALL OUTLINE, VERY THIN PROFILE		8			.65 mm	85 Cel	128KX16	128K	-40 Cel	MATTE TIN	DUAL		S-XDSO-N8	1	6 V	.75 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e3				3 mm
CAT93C86RD4A-1.8REVC	Onsemi	EEPROM	INDUSTRIAL	8	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		16	SMALL OUTLINE		8				105 Cel	1KX16	1K	-40 Cel	TIN LEAD	DUAL		S-XDSO-N8	1	6 V			.5 MHz		Not Qualified		MICROWIRE	16384 bit	1.8 V		e0

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.