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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M24C32T-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	4096 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			.833 mm
XC18V01VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel			128KX8	128K	-40 Cel		Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V04VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK, THIN PROFILE				.8 mm	85 Cel			512KX8	512K	-40 Cel					QUAD			S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified			4194304 bit	3 V								10 mm	20 ns
11AA010-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5	NO	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	200	.65 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		NO	DUAL	1	SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	1-WIRE	1024 bit	1.8 V			e3	40	260		.000005 Amp	3 mm
24AA64T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	10	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC10,.12,20		200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N10	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	2.5 V			e4	40	260		.000005 Amp	3 mm		4.5
24CS512-E/MS	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V							.000003 Amp	3 mm
24CS512T-E/MS	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V							.000003 Amp	3 mm
24CS512T-E/MS66KVAO	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel			64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	524288 bit	1.7 V							.000003 Amp	3 mm
24LC01BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3	40	260		.000005 Amp	3 mm		5
24LC01BT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260		.000001 Amp	3 mm		5
24LC16BT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	40	260		.000005 Amp	3 mm		5
24LC256-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3		260		.000005 Amp	3 mm		4.5
25AA160B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	2048 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e3				.000001 Amp	3 mm		2.5
AT24C08D-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			1KX8	1K	-40 Cel					BOTTOM			S-PBGA-B4		3.6 V	.355 mm		1 MHz			5 ms	I2C	8192 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED
CAT24C02ZE-GT3A	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	125 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4				.000005 Amp	3 mm
XC18V01PC20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
24AA024T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260		.000001 Amp	3 mm		2.5
24AA32AT-I/MSG	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	200	.65 mm	85 Cel			4KX8	4K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000001 Amp	3 mm
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm		5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260			.85 mm
CAT25160HU2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08,20	EEPROMs	100	.5 mm	85 Cel			2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4		260		.000002 Amp	2 mm
DS28E25G+T	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		4096 words		3.3			1	CHIP CARRIER, VERY THIN PROFILE					85 Cel			4KX1	4K	-40 Cel		NICKEL GOLD PALLADIUM			BOTTOM			S-XBCC-B2		3.63 V	1 mm			6 mm			1-WIRE	4096 bit	2.97 V								6 mm
DS28EL25Q+T	Maxim Integrated	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel			4KX1	4K	-40 Cel		MATTE TIN			DUAL			S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	4096 bit	1.71 V			e3	30	260			3 mm
M24128S-FCU6T/T	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.3 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			.833 mm
XC18V01PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
BR24T64FVJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.6 V			e3				.000002 Amp	3 mm
BR24G128FVJ-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			16KX8	16K	-40 Cel					DUAL			S-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			3 mm
XC18V02VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel			256KX8	256K	-40 Cel		TIN LEAD			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			2097152 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel			256KX8	256K	-40 Cel		Matte Tin (Sn)			QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			2097152 bit	3 V			e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words		3.3		3/3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories		1.27 mm	85 Cel			4MX1	4M	-40 Cel		TIN LEAD			QUAD			S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms		4194304 bit	2.97 V			e0			NOR TYPE	.001 Amp	8.9662 mm
AT28C040-20LI	Atmel	EEPROM	INDUSTRIAL	44	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		5	YES	5	8	CHIP CARRIER	LCC44,.65SQ	EEPROMs		1.27 mm	85 Cel		3-STATE	512KX8	512K	-40 Cel	NO	TIN LEAD			QUAD			S-CQCC-N44	1	5.5 V	2.74 mm			16.55 mm	Not Qualified	10 ms		4194304 bit	4.5 V	AUTOMATIC WRITE	256	e0				.003 Amp	16.55 mm	200 ns	5	YES
EPC1064TC32	Altera	CONFIGURATION MEMORY	COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	MOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	COMMON	5		5	1	FLATPACK, LOW PROFILE	TQFP32,.35SQ,32	OTP ROMs		.8 mm	70 Cel		3-STATE	64KX1	64K	0 Cel		TIN LEAD			QUAD			S-PQFP-G32	3	5.25 V	1.27 mm		4 MHz	7 mm	Not Qualified			65536 bit	4.75 V	4 WIRE INTERFACE TO FLEX 8000 DEVICES		e0		220			7 mm
XC18V01PC20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			QUAD			S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified			1048576 bit	3 V			e0					8.9662 mm	15 ns
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel			256KX8	256K	-40 Cel		Matte Tin (Sn)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			2097152 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel			512KX8	512K	-40 Cel		TIN LEAD			QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel			512KX8	512K	-40 Cel		Tin/Lead (Sn85Pb15)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			4194304 bit	3 V			e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel			512KX8	512K	-40 Cel		Matte Tin (Sn)			QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3			8	FLATPACK					85 Cel			512KX8	512K	-40 Cel		MATTE TIN			QUAD			S-PQFP-G44	3	3.6 V			33 MHz					4194304 bit	3 V			e3	30	260
24LC64-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	3 mm		4.5
25AA640A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3	40	260		.000001 Amp	3 mm		2.5
24AA01-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA01T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA02-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA025-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260		.000001 Amp	3 mm		2.5
24AA08T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5			8	SMALL OUTLINE	SOP8,.19		200	.65 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		Matte Tin (Sn)	1010XMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
24AA256T-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	40	260		.000005 Amp	3 mm		2.5
24AA256T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		2.5		1.8/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	40	260		.000005 Amp	3 mm		2.5
24AA64-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	10		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP10,.19,20		200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G10	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000005 Amp	3 mm		4.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.